Method for fabricating semiconductor device

ABSTRACT

A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. A method for fabricating the semiconductor device includes a step of forming a semiconductor layer including a metal oxide; a step of forming, over the semiconductor layer, a first conductive layer and a second conductive layer that are apart from each other over the semiconductor layer; a step of performing plasma treatment using a mixed gas including an oxidizing gas and a reducing gas on a region where the semiconductor layer is exposed; a step of forming a first insulating layer over the semiconductor layer, the first conductive layer, and the second conductive layer; and a step of forming a second insulating layer over the first insulating layer. The first insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas including a gas containing silicon, an oxidizing gas, and an ammonia gas. The first insulating layer is formed successively after the plasma treatment without exposure to the air.

TECHNICAL FIELD

One embodiment of the present invention relates to a semiconductor device and a fabrication method of the semiconductor device. One embodiment of the present invention relates to a transistor and a fabrication method of the transistor.

Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device, an input/output device, a driving method thereof, and a manufacturing method thereof. A semiconductor device generally means a device that can function by utilizing semiconductor characteristics.

BACKGROUND ART

As a semiconductor material that can be used in a transistor, an oxide semiconductor using a metal oxide has been attracting attention. For example, Patent Document 1 discloses a semiconductor device that achieves increased field-effect mobility (simply referred to as mobility or μFE in some cases) by stacking a plurality of oxide semiconductor layers, containing indium and gallium in an oxide semiconductor layer serving as a channel in the plurality of oxide semiconductor layers, and making the proportion of indium higher than the proportion of gallium.

A metal oxide that can be used for a semiconductor layer can be formed by a sputtering method or the like, and thus can be used for a semiconductor layer of a transistor included in a large display device. In addition, capital investment can be reduced because part of production equipment for a transistor using polycrystalline silicon or amorphous silicon can be retrofitted and utilized. A transistor using a metal oxide has field-effect mobility higher than that in the case where amorphous silicon is used; thus, a high-performance display device provided with driver circuits can be obtained.

Patent Document 2 discloses a thin film transistor in which an oxide semiconductor film including a low-resistance region including at least one kind in a group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, and lead as a dopant is used for a source region and a drain region.

REFERENCES Patent Documents [Patent Document 1] Japanese Published Patent Application No. 2014-7399 [Patent Document 2] Japanese Published Patent Application No. 2011-228622 SUMMARY OF THE INVENTION Problems to be Solved by the Invention

An object of one embodiment of the present invention is to provide a semiconductor device having good electrical characteristics and a fabrication method thereof. Another object is to provide a semiconductor device having stable electrical characteristics and a fabrication method thereof. Another object is to provide a fabrication method of a semiconductor device with high productivity. Another object of one embodiment of the present invention is to provide a highly reliable display device and a fabrication method thereof.

Note that the description of these objects does not preclude the existence of other objects. One embodiment of the present invention does not have to achieve all these objects. Objects other than these can be derived from the description of the specification, the drawings, the claims, and the like.

Means for Solving the Problems

One embodiment of the present invention is a method for fabricating a semiconductor device, including a step of forming a semiconductor layer including a metal oxide; a step of forming, over the semiconductor layer, a first conductive layer and a second conductive layer that are apart from each other over the semiconductor layer; a step of performing first plasma treatment using a mixed gas including a first oxidizing gas and a reducing gas on a region where the semiconductor layer is exposed; a step of forming a first insulating layer over the semiconductor layer, the first conductive layer, and the second conductive layer; and a step of forming a second insulating layer over the first insulating layer. The first insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas including a first gas containing silicon, a second oxidizing gas, and an ammonia gas. The first insulating layer is formed successively after the first plasma treatment without exposure to an air. The second insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas including a second gas containing silicon and a third oxidizing gas. The second insulating layer is formed successively after formation of the first insulating layer without exposure to an air.

A flow rate of the ammonia gas is preferably greater than or equal to 0.01 times and less than or equal to 1 time a flow rate of the second oxidizing gas in the formation of the first insulating layer.

A flow rate of the reducing gas is preferably greater than or equal to 0.005 times and less than or equal to 1 time a flow rate of the first oxidizing gas in the first plasma treatment.

The reducing gas is preferably ammonia.

The first oxidizing gas, the second oxidizing gas, and the third oxidizing gas are preferably dinitrogen monoxide.

One embodiment of the present invention is the method for fabricating a semiconductor device, further including a step of performing second plasma treatment between the step of forming the first insulating layer and the step of forming the second insulating layer. The second plasma treatment is preferably performed using a mixed gas including a fourth oxidizing gas.

The second plasma treatment is preferably performed using a mixed gas including a second ammonia gas in addition to the fourth oxidizing gas. A flow rate of the second ammonia gas is preferably greater than or equal to 0.001 times and less than or equal to 1 time a flow rate of the fourth oxidizing gas.

The fourth oxidizing gas is preferably dinitrogen monoxide.

One embodiment of the present invention is the method for fabricating a semiconductor device, further including a step of performing third plasma treatment after the step of forming the second insulating layer. The third plasma treatment is preferably performed using a mixed gas including a fifth oxidizing gas.

The third plasma treatment is preferably performed using a mixed gas including a third ammonia gas in addition to the fifth oxidizing gas. A flow rate of the third ammonia gas is preferably greater than or equal to 0.001 times and less than or equal to 1 time a flow rate of the fifth oxidizing gas.

The fifth oxidizing gas is preferably dinitrogen monoxide.

One embodiment of the present invention is the method for fabricating a semiconductor device, further including a step of performing fourth plasma treatment on the second insulating layer and a step of forming a third insulating layer over the second insulating layer. The fourth plasma treatment is preferably performed using a mixed gas including a sixth oxidizing gas. The third insulating layer is preferably formed by a plasma-enhanced chemical vapor deposition method successively after the fourth plasma treatment without exposure to an air.

The fourth plasma treatment is preferably performed using a mixed gas including a fourth ammonia gas in addition to the sixth oxidizing gas. A flow rate of the fourth ammonia gas is preferably greater than or equal to 0.001 times and less than or equal to 1 time a flow rate of the sixth oxidizing gas.

The sixth oxidizing gas is preferably dinitrogen monoxide.

One embodiment of the present invention is the method for fabricating a semiconductor device, further including a step of performing cleaning treatment between the step of forming the first conductive layer and the second conductive layer and the step of performing the first plasma treatment. A cleaning solution containing phosphoric acid and an additive is preferably used in the step of performing the cleaning treatment. The additive preferably has a function of forming a complex by being coordinated to a metal in the first conductive layer and the second conductive layer.

A concentration of the additive in the cleaning solution is preferably higher than or equal to 10 ppm.

The first conductive layer and the second conductive layer each preferably have a stacked-layer structure of a first conductive film, a second conductive film over the first conductive film, and a third conductive film over the second conductive film. At this time, the second conductive film preferably contains copper, silver, or aluminum. It is preferable that the first conductive film and the third conductive film contain an element different from an element of the second conductive film and each independently contain at least one of titanium, tungsten, molybdenum, chromium, tantalum, zinc, indium, platinum, and ruthenium.

The semiconductor layer preferably has a stacked-layer structure of a first metal oxide film and a second metal oxide film over the first metal oxide film. At this time, a proportion of a flow rate of an oxygen gas in a whole deposition gas in forming the second metal oxide film is preferably higher than a proportion of a flow rate of an oxygen gas in a whole deposition gas in forming the first metal oxide film.

Effect of the Invention

According to one embodiment of the present invention, a semiconductor device having good electrical characteristics and a fabrication method thereof can be provided. In addition, a semiconductor device having stable electrical characteristics and a fabrication method thereof can be provided. One embodiment of the present invention can provide a fabrication method of a semiconductor device with high productivity. One embodiment of the present invention can provide a highly reliable display device and a fabrication method thereof.

Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not have to have all of these effects. Effects other than these can be derived from the description of the specification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A and FIG. 1B are cross-sectional views illustrating structure examples of transistors.

FIG. 2A and FIG. 2B are cross-sectional views illustrating structure examples of transistors.

FIG. 3A is a top view illustrating a structure example of a transistor. FIG. 3B and FIG. 3C are cross-sectional views illustrating a structure example of a transistor.

FIG. 4A, FIG. 4B, and FIG. 4C are cross-sectional views illustrating structure examples of a transistor.

FIG. 5A is a top view illustrating a structure example of a transistor. FIG. 5B and FIG. 5C are cross-sectional views illustrating a structure example of a transistor.

FIG. 6A and FIG. 6B are cross-sectional views illustrating a structure example of a transistor.

FIG. 7A and FIG. 7B are cross-sectional views illustrating a structure example of a transistor.

FIG. 8A, FIG. 8B, and FIG. 8C are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 9A and FIG. 9B are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 10A and FIG. 10B are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 11A and FIG. 11B are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 12 is a cross-sectional view illustrating a method for fabricating a transistor.

FIG. 13A and FIG. 13B are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 14A and FIG. 14B are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 15 is a cross-sectional view illustrating a method for fabricating a transistor.

FIG. 16A and FIG. 16B are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 17A and FIG. 17B are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 18A and FIG. 18B are cross-sectional views illustrating a method for fabricating a transistor.

FIG. 19A, FIG. 19B, FIG. 19C, and FIG. 19D are cross-sectional views illustrating structure examples of transistors.

FIG. 20A is a top view illustrating a structure example of a transistor. FIG. 20B and FIG. 20C are cross-sectional views illustrating a structure example of a transistor.

FIG. 21A is a top view illustrating a structure example of a transistor. FIG. 21B and FIG. 21C are cross-sectional views illustrating a structure example of a transistor.

FIG. 22A is a top view illustrating a structure example of a transistor. FIG. 22B and FIG. 22C are cross-sectional views illustrating a structure example of a transistor.

FIG. 23A, FIG. 23B, FIG. 23C, FIG. 23D, and FIG. 23E are structure examples of a transistor.

FIG. 24A, FIG. 24B, and FIG. 24C are top views of display devices.

FIG. 25 is a cross-sectional view of a display device.

FIG. 26 is a cross-sectional view of a display device.

FIG. 27 is a cross-sectional view of a display device.

FIG. 28 is a cross-sectional view of a display device.

FIG. 29 is a cross-sectional view of a display device.

FIG. 30A is a block diagram of a display device. FIG. 30B and FIG. 30C are circuit diagrams of a display device.

FIG. 31A, FIG. 31C, and FIG. 31D are circuit diagrams of display devices. FIG. 31B is a timing chart for a display device.

FIG. 32A and FIG. 32B are a structure example of a display module.

FIG. 33A and FIG. 33B are a structure example of an electronic device.

FIG. 34A, FIG. 34B, FIG. 34C, and FIG. 34D are structure examples of electronic devices.

FIG. 35 shows graphs showing TDS analysis results.

FIG. 36 shows graphs showing TDS analysis results.

FIG. 37 shows graphs showing TDS analysis results.

FIG. 38A and FIG. 38B show graphs showing TDS analysis results.

FIG. 39A and FIG. 39B show graphs showing ESR analysis results.

FIG. 40 shows a graph showing correlation between the released amount of ammonia molecules and the spin density.

FIG. 41 shows graphs showing ID-VG measurement results.

FIG. 42 shows graphs showing ID-VG measurement results.

FIG. 43 shows graphs showing ID-VG measurement results.

FIG. 44 shows graphs showing ID-VG measurement results.

FIG. 45 shows a graph showing reliability measurement results.

FIG. 46 shows a graph showing ESR analysis results.

FIG. 47 shows a graph showing resistance measurement results.

FIG. 48 shows graphs showing ID-VG measurement results.

FIG. 49 shows graphs showing ID-VG measurement results.

FIG. 50 shows graphs showing ID-VG measurement results.

FIG. 51 shows a graph showing reliability measurement results.

FIG. 52 shows graphs showing ID-VG measurement results.

MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments will be described with reference to the drawings. Note that the embodiments can be implemented in many different modes, and it will be readily understood by those skilled in the art that modes and details thereof can be changed in various ways without departing from the spirit and scope thereof. Thus, the present invention should not be construed as being limited to the following description of the embodiments.

In each drawing described in this specification, the size, the layer thickness, or the region of each component is exaggerated for clarity in some cases.

Ordinal numbers such as “first”, “second”, and “third” used in this specification are used in order to avoid confusion among components, and the terms do not limit the components numerically.

In this specification, terms for describing arrangement, such as “over” and “under,” are used for convenience to describe the positional relationship between components with reference to drawings. The positional relationship between components is changed as appropriate in accordance with a direction in which each component is described. Thus, terms for the description are not limited to those used in this specification, and the description can be rephrased appropriately depending on the situation.

In this specification and the like, functions of a source and a drain of a transistor are sometimes interchanged with each other when a transistor of opposite polarity is employed or the direction of current is changed in circuit operation, for example. Therefore, the terms “source” and “drain” can be used interchangeably.

In this specification and the like, “electrically connected” includes the case where connection is made through an “object having any electric function”. Here, there is no particular limitation on the “object having any electric function” as long as electric signals can be transmitted and received between components that are connected through the object. Examples of the “object having any electric function” include a switching element such as a transistor, a resistor, an inductor, a capacitor, and other elements with a variety of functions as well as an electrode and a wiring.

In this specification and the like, the term “film” and the term “layer” can be interchanged with each other. For example, in some cases, the term “conductive layer” and the term “insulating layer” can be interchanged with the term “conductive film” and the term “insulating film,” respectively.

Unless otherwise specified, off-state current in this specification and the like refers to drain current of a transistor in an off state (also referred to as a non-conducting state or a cutoff state). Unless otherwise specified, an off state refers to a state where the voltage V_(gs) between a gate and a source is lower than the threshold voltage Vth in an n-channel transistor (higher than V_(th) in a p-channel transistor).

In this specification and the like, a display panel that is one embodiment of a display device has a function of displaying (outputting) an image or the like on (to) a display surface. Thus, the display panel is one embodiment of an output device.

In this specification and the like, a substrate of a display panel to which a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package) is attached, or a substrate on which an IC is mounted by a COG (Chip On Glass) method or the like is referred to as a display panel module, a display module, or simply a display panel or the like in some cases.

Note that in this specification and the like, a touch panel that is one embodiment of a display device has a function of displaying an image or the like on a display surface and a function of a touch sensor capable of sensing the contact, press, approach, or the like of a sensing target such as a finger or a stylus with or to the display surface. Thus, the touch panel is one embodiment of an input/output device.

A touch panel can also be referred to as, for example, a display panel (or a display device) with a touch sensor, or a display panel (or a display device) having a touch sensor function. A touch panel can include a display panel and a touch sensor panel. Alternatively, a touch panel can have a function of a touch sensor in the display panel or on the surface of the display panel.

In this specification and the like, a substrate of a touch panel on which a connector and an IC are mounted is referred to as a touch panel module, a display module, or simply a touch panel or the like in some cases.

Embodiment 1

In this embodiment, a semiconductor device of one embodiment of the present invention, a fabrication method thereof, and the like will be described.

One embodiment of the present invention is a transistor including, over a formation surface, a gate electrode, a gate insulating layer over the gate electrode, a semiconductor layer over the gate insulating layer, and a pair of source and drain electrodes that is in contact with a top surface of the semiconductor layer. The semiconductor layer preferably includes a metal oxide exhibiting semiconductor characteristics (hereinafter, also referred to as an oxide semiconductor).

In addition, an insulating layer functioning as a protective layer is preferably provided over the semiconductor layer, the source electrode, and the drain electrode.

The amount of nitrogen oxide (NO_(x); x is greater than 0 and less than or equal to 2) released from the insulating layer in contact with the semiconductor layer by application of heat is preferably small. Examples of nitrogen oxide include NO₂ and NO. Nitrogen oxide included in the insulating layer forms a state in the insulating layer or the like. The state is positioned in the energy gap of the semiconductor layer. Thus, when nitrogen oxide is diffused to the interface between the insulating layer and the semiconductor layer, an electron may be trapped by the state on the insulating layer side. As a result, the trapped electron remains in the vicinity of the interface between the insulating layer and the semiconductor layer; hence, the threshold voltage of the transistor is shifted in the positive direction.

Note that the amount of ammonia released from the insulating layer is preferably large. Nitrogen oxide reacts with ammonia and oxygen by application of heat, and then is decomposed. Since nitrogen oxide included in the insulating layer reacts with ammonia included in the insulating layer by application of heat, the amount of nitrogen oxide included in the insulating layer is reduced. Thus, electrons are hardly trapped at the interface between the insulating layer and the semiconductor layer.

When a film from which a large amount of ammonia is released and a small amount of nitrogen oxide is released is used as the insulating layer, a change in the threshold voltage of the transistor can be inhibited, which can reduce a change in the electrical characteristics of the transistor.

As the insulating layer, for example, an oxide film such as a silicon oxide film or a silicon oxynitride film is preferably formed with a plasma-enhanced chemical vapor deposition apparatus (a PECVD apparatus or simply referred to as a plasma CVD apparatus). In that case, a mixed gas including a deposition gas containing silicon, an oxidizing gas, and an ammonia gas is preferably used as a source gas. An insulating layer formed using the mixed gas including the ammonia gas can be an insulating layer from which a large amount of ammonia is released. Examples of the deposition gas containing silicon include silane, disilane, trisilane, and silane fluoride. As the oxidizing gas, a gas containing oxygen can be suitably used. As the oxidizing gas, one or more of oxygen (O₂), ozone (O₃), dinitrogen monoxide (N₂O), nitrogen monoxide (NO), and nitrogen dioxide (NO₂) can be used, for example.

The proportions of the gases in the mixed gas can be controlled by controlling the flow rates of the gases supplied to a treatment chamber of the plasma-enhanced chemical vapor deposition apparatus. Note that the ratio of the gases in the mixed gas can be expressed in, for example, the volume ratio, the partial pressure ratio, or the weight ratio. Here, the flow rate ratio of the gases supplied to the treatment chamber is substantially the same as the volume ratio and the partial pressure ratio of the gases.

In the formation of the insulating layer, the flow rate of the ammonia gas is preferably 0.01 times or more and 1 time or less, further preferably 0.02 times or more and 0.9 times or less, still further preferably 0.03 times or more and 0.8 times or less, yet further preferably 0.04 times or more and 0.6 times or less, yet still further preferably 0.05 times or more and 0.5 times or less as high as the flow rate of the oxidizing gas. With the above-described flow rates of the gases, an insulating layer from which a large amount of ammonia is released can be obtained. Since the amount of nitrogen oxide released from the insulating layer is reduced, a transistor with a small change in the threshold voltage can be obtained. In addition, with the above-described flow rates of the gases, an insulating layer with few defects can be formed even when the pressure in the treatment chamber is relatively high.

A semiconductor device of one embodiment of the present invention and a fabrication method thereof will be described below.

Structure Example 1 Structure Example 1-1

FIG. 1A illustrates a schematic cross-sectional view of a transistor 10 of one embodiment of the present invention in the channel length direction.

The transistor 10 includes a conductive layer 104, an insulating layer 106, a semiconductor layer 108, a conductive layer 112 a, and a conductive layer 112 b. The conductive layer 104 functions as a gate electrode. Part of the insulating layer 106 functions as a gate insulating layer. The conductive layer 112 a functions as one of a source electrode and a drain electrode, and the conductive layer 112 b functions as the other. A region of the semiconductor layer 108 that overlaps with the conductive layer 104 functions as a channel formation region. The transistor 10 is what is called a bottom-gate transistor including a gate electrode below the semiconductor layer 108.

An insulating layer 114, an insulating layer 116, and an insulating layer 118 are provided to cover the conductive layer 112 a, the conductive layer 112 b, and the semiconductor layer 108. The insulating layer 114, the insulating layer 116, and the insulating layer 118 each function as a protective layer.

The conductive layer 104 is preferably formed using a conductive film containing a metal or an alloy, in which case the electric resistance can be reduced. The use of a conductive material containing copper for the conductive layer 104 is particularly preferable. Note that an oxide film may be used as the conductive layer 104.

It is preferable to use an oxide film as the insulating layer 106. It is particularly preferable to use an oxide film for a portion in contact with the semiconductor layer 108.

The insulating layer 106 preferably has high withstand voltage. The high withstand voltage of the insulating layer 106 results in a transistor with high reliability.

The absolute value of the stress of the insulating layer 106 is preferably small. The small absolute value of the stress of the insulating layer 106 can inhibit occurrence of problems during the process caused by stress such as warpage of the substrate.

The insulating layer 106 preferably functions as a barrier film that inhibits diffusion of impurities such as water, hydrogen, and sodium into the transistor 10 from a member (e.g., a substrate) on the formation surface side of the insulating layer 106. In addition, the insulating layer 106 preferably functions as a barrier film that inhibits diffusion of a component of the conductive layer 104 into the transistor 10. The insulating layer 106 functions as a barrier film that inhibits diffusion of impurities and the like; thus, the transistor can have favorable electrical characteristics and high reliability.

Moreover, the amount of impurities such as water and hydrogen released from the insulating layer 106 itself is preferably small. With the insulating layer 106 from which a small amount of impurities is released, diffusion of impurities to the transistor 10 side is inhibited, and the transistor can have favorable electrical characteristics and high reliability.

Furthermore, the insulating layer 106 preferably functions as a barrier film that inhibits diffusion of oxygen. The insulating layer 106 having a function of inhibiting diffusion of oxygen inhibits diffusion of oxygen into the conductive layer 104 from above the insulating layer 106 and thus can inhibit oxidation of the conductive layer 104. Consequently, the transistor can have favorable electrical characteristics and high reliability.

FIG. 1A illustrates a structure in which the insulating layer 106 has a stacked-layer structure of an insulating layer 106 a and an insulating layer 106 b over the insulating layer 106 a. For example, a nitride film can be used as the insulating layer 106 a positioned on the formation surface side of the insulating layer 106, and an oxide film can be used as the insulating layer 106 b in contact with the semiconductor layer 108.

The insulating layer 106 a preferably has high withstand voltage. The high withstand voltage of the insulating layer 106 a results in a transistor with high reliability.

The absolute value of the stress of the insulating layer 106 a is preferably small. The small absolute value of the stress of the insulating layer 106 a can inhibit occurrence of problems during the process caused by stress such as warpage of the substrate.

The insulating layer 106 a preferably functions as a barrier film that inhibits diffusion of impurities such as water, hydrogen, and sodium into the transistor 10 from the formation surface side of the insulating layer 106. In addition, the insulating layer 106 a preferably functions as a barrier film that inhibits diffusion of a component of the conductive layer 104 into the transistor 10. The insulating layer 106 a has a function of inhibiting diffusion of impurities and the like; thus, the transistor can have favorable electrical characteristics and high reliability.

Moreover, the amount of impurities such as water and hydrogen released from the insulating layer 106 a itself is preferably small. With the insulating layer 106 a from which a small amount of impurities is released, diffusion of impurities to the transistor 10 side is inhibited, and the transistor can have favorable electrical characteristics and high reliability.

Furthermore, the insulating layer 106 a preferably functions as a barrier film that inhibits diffusion of oxygen. The insulating layer 106 a having a function of inhibiting diffusion of oxygen inhibits diffusion of oxygen into the conductive layer 104 from above the insulating layer 106 a and thus can inhibit oxidation of the conductive layer 104. Consequently, the transistor can have favorable electrical characteristics and high reliability.

As the insulating layer 106 a, for example, an oxide film of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, or the like or a nitride film of silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be used. It is particularly suitable to use silicon nitride for the insulating layer 106 a.

The insulating layer 106 b includes a region in contact with the channel formation region of the semiconductor layer 108. The insulating layer 106 b preferably has a low defect density. Moreover, the amount of impurities including hydrogen, such as water and hydrogen, released from the insulating layer 106 b itself is preferably small. An oxide film of silicon oxide, silicon oxynitride, or the like can be suitably used as the insulating layer 106 b.

The insulating layer 106 having the stacked-layer structure as illustrated in FIG. 1A allows the transistor to have favorable electrical characteristics and high reliability.

A nitride film may be formed as the insulating layer 106 a, and then oxygen may be added to an upper portion of the insulating layer 106 a to form an oxygen-containing region; the oxygen-containing region may be regarded as the insulating layer 106 b. Examples of treatment for adding oxygen include heat treatment or plasma treatment in an oxygen-containing atmosphere, and ion doping treatment.

Note that in this specification and the like, oxynitride refers to a substance that contains more oxygen than nitrogen in its composition, and oxynitride is included in oxide. Nitride oxide refers to a substance that contains more nitrogen than oxygen in its composition, and nitride oxide is included in nitride.

Although the insulating layer 106 has a two-layer structure of the insulating layer 106 a and the insulating layer 106 b in FIG. 1A, one embodiment of the present invention is not limited thereto. The insulating layer 106 may have a single-layer structure or a stacked-layer structure of three or more layers. Each of the insulating layer 106 a and the insulating layer 106 b may have a stacked-layer structure of two or more layers.

The semiconductor layer 108 contains a metal oxide exhibiting semiconductor characteristics (hereinafter, also referred to as an oxide semiconductor). Oxide semiconductors can be classified into a single crystal oxide semiconductor and a non-single-crystal oxide semiconductor. Examples of a non-single-crystal oxide semiconductor include a CAAC-OS, a polycrystalline oxide semiconductor, an nc-OS, an amorphous-like oxide semiconductor (a-like OS), and an amorphous oxide semiconductor.

It is preferable to use a metal oxide film having crystallinity as the semiconductor layer 108. The semiconductor layer 108 preferably contains at least indium and oxygen. When the semiconductor layer 108 contains an oxide of indium, the carrier mobility can be increased; accordingly, for example, a transistor enabling higher current flow than a transistor containing amorphous silicon can be obtained.

Here, the composition of the semiconductor layer 108 is described. The semiconductor layer 108 preferably contains a metal oxide containing at least indium and oxygen. Moreover, the semiconductor layer 108 may contain zinc additionally. The semiconductor layer 108 may contain gallium.

Typically, an indium oxide, an indium zinc oxide (In—Zn oxide), an indium gallium zinc oxide (also denoted as In—Ga—Zn oxide or IGZO), or the like can be used for the semiconductor layer 108. Alternatively, an indium tin oxide (In—Sn oxide), an indium tin oxide containing silicon, or the like can be used. The material that can be used for the semiconductor layer 108 is described in detail later.

It is preferable to use a metal oxide film having crystallinity as the semiconductor layer 108. For example, a metal oxide film having a CAAC (c-axis aligned crystal) structure, which is described later, a polycrystalline structure, a nano-crystal (nc) structure, or the like can be used. By using a metal oxide film having crystallinity as the semiconductor layer 108, the density of defect states in the semiconductor layer 108 can be reduced, which enables the semiconductor device to have high reliability.

As the semiconductor layer 108 has higher crystallinity, the density of defect states in the film can be lower. By contrast, the use of a metal oxide film with low crystallinity enables a transistor to flow a large amount of current.

In the case where the metal oxide film is formed by a sputtering method, the crystallinity of the formed metal oxide film can be increased as the substrate temperature (the stage temperature) at the time of formation is higher. The crystallinity of the formed metal oxide film can be increased as the proportion of a flow rate of an oxygen gas in the whole deposition gas (also referred to as oxygen flow rate ratio) used at the time of formation is higher.

The semiconductor layer 108 preferably has a stacked-layer structure of a semiconductor layer 108 a and a semiconductor layer 108 b over the semiconductor layer 108 a. Each of the semiconductor layer 108 a and the semiconductor layer 108 b preferably includes a metal oxide. Note that a boundary (interface) between the semiconductor layer 108 a and the semiconductor layer 108 b cannot be clearly observed in some cases. Then, in the drawings illustrating one embodiment of the present invention, the boundary is denoted by a dashed line.

The semiconductor layer 108 b, which is positioned on the back channel side, preferably includes a region having higher crystallinity than the semiconductor layer 108 a, which is positioned on the conductive layer 104 side. With the semiconductor layer 108 b including a region having high crystallinity, the semiconductor layer 108 can be inhibited from being partly etched and lost at the time of forming the conductive layer 112 a and the conductive layer 112 b. In addition, damage to the semiconductor layer 108 at the time of performing cleaning treatment on the surface of the semiconductor layer 108 can be inhibited.

The semiconductor layer 108 a and the semiconductor layer 108 b can be formed separately in different formation conditions, for example. The flow rate of oxygen gas in the deposition gas can be made different between the semiconductor layer 108 a and the semiconductor layer 108 b, for example.

In this case, as the formation conditions of the semiconductor layer 108 a, the proportion of oxygen gas flow rate (also referred to as oxygen flow rate ratio or oxygen partial pressure) in the whole gas flow rate is preferably higher than or equal to 0% and lower than 50%, further preferably higher than or equal to 5% and lower than or equal to 30%, still further preferably higher than or equal to 5% and lower than or equal to 20%. With the above oxygen flow rate ratio, the semiconductor layer 108 a can have low crystallinity.

As the formation conditions of the semiconductor layer 108 b, the oxygen flow rate ratio is preferably higher than or equal to 50% and lower than or equal to 100%, further preferably higher than or equal to 60% and lower than or equal to 100%, still further preferably higher than or equal to 70% and lower than or equal to 100%, yet still further preferably higher than or equal to 80% and lower than or equal to 100%. With the above oxygen flow rate ratio, the semiconductor layer 108 b can have high crystallinity.

In the case where the semiconductor layer 108 has a stacked-layer structure, successive formation is preferably performed using the same sputtering target in the same treatment chamber because the interface can be favorable. Although the formation conditions such as pressure, temperature, and power at the time of the formation may vary between the metal oxide films, it is particularly preferable to employ the same conditions except for the oxygen flow rate ratio because the time required for formation steps can be shortened. The semiconductor layer 108 may have a stacked-layer structure of metal oxide films with different compositions. In the case where metal oxide films with different compositions are stacked, successive formation without exposure to the air is preferably performed.

The substrate temperature at the time of forming the semiconductor layer 108 is preferably higher than or equal to room temperature (25° C.) and lower than or equal to 200° C., further preferably higher than or equal to room temperature and lower than or equal to 130° C. With the substrate temperature in the above range, the bending or warpage of the substrate can be inhibited in the case where a large-area glass substrate is used. When the semiconductor layer 108 has a stacked-layer structure and the semiconductor layer 108 a and the semiconductor layer 108 b are formed at the same substrate temperature, the productivity can be increased. In the case where the semiconductor layer 108 a and the semiconductor layer 108 b are formed at different substrate temperatures, the substrate temperature at the time of forming the semiconductor layer 108 b is preferably higher than the substrate temperature at the time of forming the semiconductor layer 108 a. The high substrate temperature at the time of forming the semiconductor layer 108 b enables the semiconductor layer 108 b to have higher crystallinity than the semiconductor layer 108 a.

For example, it is preferable that a CAC-OS (Cloud-Aligned Composite oxide semiconductor) film be used for the semiconductor layer 108 a and a CAAC-OS (c-axis-aligned crystalline oxide semiconductor) film be used for the semiconductor layer 108 b.

The crystallinity of the semiconductor layer 108 a and the semiconductor layer 108 b can be analyzed with X-ray diffraction (XRD), a transmission electron microscope (TEM), electron diffraction, or the like, for example.

The thickness of the semiconductor layer 108 a is preferably greater than or equal to 1 nm and less than or equal to 50 nm, further preferably greater than or equal to 5 nm and less than or equal to 30 nm, still further preferably greater than or equal to 5 nm and less than or equal to 20 nm. The thickness of the semiconductor layer 108 b is preferably greater than or equal to 1 nm and less than or equal to 50 nm, further preferably greater than or equal to 5 nm and less than or equal to 30 nm, still further preferably greater than or equal to 5 nm and less than or equal to 20 nm.

Here, oxygen vacancies that might be formed in the semiconductor layer 108 will be described.

In the case where the semiconductor layer 108 includes an oxide semiconductor, hydrogen contained in the oxide semiconductor reacts with oxygen bonded to a metal atom to be water, and thus sometimes forms an oxygen vacancy (V_(o)) in the oxide semiconductor. In some cases, a defect where hydrogen enters an oxygen vacancy (hereinafter, referred to as V_(o)H) functions as a donor and generates an electron serving as a carrier. In other cases, bonding of part of hydrogen to oxygen bonded to a metal atom generates electrons serving as carriers. Thus, a transistor using an oxide semiconductor that contains a large amount of hydrogen is likely to be normally on. Moreover, hydrogen in an oxide semiconductor is easily transferred by a stress such as heat or an electric field; thus, a large amount of hydrogen in an oxide semiconductor might reduce the reliability of a transistor.

V_(o)H can serve as a donor of the oxide semiconductor. However, it is difficult to evaluate the defects quantitatively. Thus, the oxide semiconductor is sometimes evaluated by not its donor concentration but its carrier concentration. Therefore, in this specification and the like, the carrier concentration assuming the state where an electric field is not applied is sometimes used, instead of the donor concentration, as the parameter of the oxide semiconductor. That is, “carrier concentration” in this specification and the like can be replaced with “donor concentration” in some cases.

Accordingly, in the case where an oxide semiconductor is used as the semiconductor layer 108, the amount of V_(o)H in the semiconductor layer 108 is preferably reduced as much as possible so that the semiconductor layer 108 becomes a highly purified intrinsic or substantially highly purified intrinsic semiconductor layer. In order to obtain such an oxide semiconductor with sufficiently reduced V_(o)H, it is important to remove impurities such as water and hydrogen in the oxide semiconductor (this treatment is sometimes referred to as dehydration or dehydrogenation treatment) and supply oxygen to the oxide semiconductor to fill oxygen vacancies (this treatment is sometimes referred to as oxygen adding treatment). When an oxide semiconductor with sufficiently reduced impurities such as V_(o)H is used for a channel formation region of a transistor, stable electrical characteristics can be given.

When an oxide semiconductor is used for the semiconductor layer 108, the carrier concentration of the oxide semiconductor in a region functioning as a channel formation region is preferably lower than or equal to 1×10¹⁸ cm⁻³, further preferably lower than 1×10¹⁷ cm⁻³, still further preferably lower than 1×10¹⁶ cm⁻³, yet still further preferably lower than 1×10¹³ cm⁻³, yet still further preferably lower than 1×10¹² cm⁻³. Note that the lower limit of the carrier concentration of the oxide semiconductor in the region functioning as the channel formation region is not particularly limited and can be, for example, 1×10⁻⁹ cm⁻³.

The insulating layer 114 and the insulating layer 116 have a function of protective films for the transistor 10. Furthermore, the insulating layer 114 and the insulating layer 116 each have a function of supplying oxygen to the semiconductor layer 108.

Supplying oxygen from the insulating layer 114 and the insulating layer 116 to the semiconductor layer 108, particularly to the back channel side of the semiconductor layer 108, can reduce V_(o) and V_(o)H in the semiconductor layer 108, so that a highly reliable transistor can be obtained. Examples of treatment for supplying oxygen to the semiconductor layer 108 include heat treatment in an oxygen-containing atmosphere and plasma treatment in an oxygen-containing atmosphere.

The conductive layer 112 a and the conductive layer 112 b are preferably formed using a conductive film containing a metal or an alloy, in which case the electric resistance can be reduced. The use of a conductive material containing copper for the conductive layer 112 a and the conductive layer 112 b is particularly preferable. Note that an oxide film may be used as the conductive layer 112 a and the conductive layer 112 b.

FIG. 1A illustrates an example in which the conductive layer 112 a and the conductive layer 112 b each have a stacked-layer structure in which a conductive layer 113 a, a conductive layer 113 b, and a conductive layer 113 c are stacked in this order from the formation surface side.

A low-resistance conductive material is preferably used for the conductive layer 113 b. The conductive layer 113 a and the conductive layer 113 c can be each independently formed using a conductive material different from that of the conductive layer 113 b. When the conductive layer 113 b is sandwiched between the conductive layer 113 a and the conductive layer 113 c, it is possible to inhibit oxidation of a surface of the conductive layer 113 b and diffusion of the components of the conductive layer 113 b into neighboring layers. With such a structure, the conductive layer 112 a and the conductive layer 112 b can have extremely low resistance.

In each of the conductive layer 112 a and the conductive layer 112 b, the topmost conductive layer 113 c preferably contains a material that is less likely to be bonded to oxygen than a conductive film containing copper, aluminum, or the like, or a material that is less likely to be deprived of its conductivity even when being oxidized. In addition, a material into which oxygen in the semiconductor layer 108 is less likely to diffuse is preferably used for the conductive layer 113 a that is in contact with the semiconductor layer 108. For the topmost conductive layer 113 c and the conductive layer 113 a that is in contact with the semiconductor layer, a conductive material containing titanium, tungsten, molybdenum, chromium, tantalum, zinc, indium, platinum, ruthenium, or the like can be used, for example. The conductive layer 113 a and the conductive layer 113 c can be formed using the same conductive material. Alternatively, the conductive layer 113 a and the conductive layer 113 c may be formed using different conductive materials.

First cleaning treatment is preferably performed after the conductive layer 112 a and the conductive layer 112 b are formed. By performing the first cleaning treatment, the damaged layer on the surface of the semiconductor layer 108 can be removed. Examples of a cleaning method include wet cleaning using a cleaning solution or the like, heat treatment, and cleaning by plasma treatment using plasma. Alternatively, the above cleaning methods may be performed in combination as appropriate.

Wet cleaning can be suitably employed as the first cleaning treatment. In the case where wet cleaning is employed as the first cleaning treatment, for example, a cleaning solution containing at least one of phosphoric acid, oxalic acid, and hydrochloric acid is preferably used. The cleaning solution may further contain a compound that forms a complex together with a metal included in the conductive layer 112 a and the conductive layer 112 b (hereinafter, referred to as an additive). In the first cleaning treatment, a cleaning solution containing phosphoric acid and an additive can be suitably used, for example. With the use of a cleaning solution containing an additive, a metal escaping from the conductive layer 112 a and the conductive layer 112 b to the cleaning solution is bonded to the additive to be a complex. The complex can stably exist in the cleaning solution; thus, reattachment of the metal to the semiconductor layer 108 from the cleaning solution can be inhibited. Also in the case where the metal is attached to the semiconductor layer 108, the metal is bonded to the additive to be the complex. Then, the complex is dissolved in the cleaning solution, so that the metal attached to the semiconductor layer 108 can be effectively removed.

Next, second cleaning treatment is preferably performed before the insulating layer 114 is formed over the semiconductor layer 108. The second cleaning treatment can remove water, hydrogen, an organic substance, and the like adsorbed on the surface of the semiconductor layer 108. Examples of a cleaning method include wet cleaning using a cleaning solution or the like, heat treatment, and cleaning by plasma treatment using plasma (hereinafter, referred to as first plasma treatment). Alternatively, the above cleaning methods may be performed in combination as appropriate.

The heat treatment is preferably performed in an atmosphere containing an oxidizing gas or a reduced pressure atmosphere. An oxidizing gas refers to a gas having oxidizability. As the oxidizing gas, the above-described gas can be used. The heat treatment can be performed in an oxygen gas atmosphere at a temperature higher than or equal to 70° C. and lower than or equal to 200° C., for example.

The first plasma treatment is preferably performed in an atmosphere containing an oxidizing gas. When the first plasma treatment is performed in an atmosphere containing an oxidizing gas, an organic substance on the surface of the semiconductor layer 108 can be suitably removed. After the first plasma treatment, the insulating layer 114 is preferably formed successively without exposure of the surface of the semiconductor layer 108 to the air. When the insulating layer 114 is formed successively after the first plasma treatment, it is possible to inhibit attachment of impurities to the interface between the semiconductor layer 108 and the insulating layer 114.

In some cases, the conductive layer 112 a and the conductive layer 112 b are oxidized by the second cleaning treatment and thus have increased resistance, which adversely affects the electrical characteristics and reliability of the transistor. Hence, it is particularly preferable that the first plasma treatment using a mixed gas including an oxidizing gas and a reducing gas be performed as the second cleaning treatment. As the oxidizing gas, the above-described gas can be used. A reducing gas refers to a gas having reducing ability. As the reducing gas, for example, at least one of gases containing hydrogen, such as ammonia (NH₃) and hydrogen (H₂), and carbon monoxide (CO) can be used. For example, the first plasma treatment is performed in an atmosphere of a mixed gas including an oxidizing gas of dinitrogen monoxide and a reducing gas of ammonia, whereby oxidation of the conductive layer 112 a and the conductive layer 112 b can be inhibited and water, hydrogen, an organic substance, and the like adsorbed on the surface of the semiconductor layer 108 can be removed effectively.

In the first plasma treatment, the flow rate of the reducing gas is preferably 0.005 times or more and 1 time or less, further preferably 0.01 times or more and 0.9 times or less, still further preferably 0.02 times or more and 0.8 times or less, yet further preferably 0.03 times or more and 0.6 times or less, yet still further preferably 0.03 times or more and 0.5 times or less as high as the flow rate of the oxidizing gas.

As the mixed gas used for the first plasma treatment, a mixed gas including a rare gas such as argon in addition to the oxidizing gas and the reducing gas may be used.

The amount of nitrogen oxide (NO_(x); x is greater than 0 and less than or equal to 2) released from the insulating layer 114 in contact with the semiconductor layer 108 is preferably small. Examples of nitrogen oxide include NO₂ and NO. The amount of ammonia released from the insulating layer 114 is preferably large.

Nitrogen oxide forms a state in the insulating layer 114 and the like. The state is positioned in the energy gap of the semiconductor layer 108. Thus, when nitrogen oxide is diffused to the interface between the insulating layer 114 and the semiconductor layer 108, an electron may be trapped by the state on the insulating layer 114 side. As a result, the trapped electron remains in the vicinity of the interface between the insulating layer 114 and the semiconductor layer 108; hence, the threshold voltage of the transistor is shifted in the positive direction.

Nitrogen oxide reacts with ammonia and oxygen by application of heat. Since nitrogen oxide included in the insulating layer 114 reacts with ammonia included in the insulating layer 114 and the insulating layer 116 by application of heat, the amount of nitrogen oxide included in the insulating layer 114 is reduced. Thus, electrons are hardly trapped at the interface between the insulating layer 114 and the semiconductor layer 108.

When a film from which a large amount of ammonia is released and a small amount of nitrogen oxide is released is used as the insulating layer 114, a change in the threshold voltage of the transistor can be inhibited, which can reduce a change in the electrical characteristics of the transistor.

As the insulating layer 114, for example, an oxide film such as a silicon oxide film or a silicon oxynitride film is preferably formed with a plasma-enhanced chemical vapor deposition apparatus (a PECVD apparatus or simply referred to as a plasma CVD apparatus). In that case, a mixed gas including a deposition gas containing silicon, an oxidizing gas, and an ammonia gas is preferably used as a source gas. The insulating layer 114 formed using the mixed gas including the ammonia gas can be the insulating layer 114 from which a large amount of ammonia is released. As the deposition gas containing silicon, the above-described gas can be used. As the oxidizing gas, the above-described gas can be used.

In the case where the first plasma treatment is performed as the second cleaning treatment, the same gas can be used as a gas used for the first plasma treatment and a gas used for the formation of the insulating layer 114. In the first plasma treatment, a mixed gas including a first oxidizing gas and a reducing gas is used, and in the formation of the insulating layer 114, a mixed gas of a first deposition gas containing silicon, a second oxidizing gas, and an ammonia gas is used. Here, when the same kind of gas is used as the first oxidizing gas and the second oxidizing gas and an ammonia gas is used as the reducing gas, the same oxidizing gas and the same ammonia gas can be used in the first plasma treatment and the formation of the insulating layer 114. Using the same gases can reduce the kinds of gas used for fabricating the transistor.

A case where the first plasma treatment and the formation of the insulating layer 114 are performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example. Here, the insulating layer 114 is silicon oxynitride.

In the first plasma treatment, a mixed gas including an oxidizing gas of dinitrogen monoxide (N₂O) and a reducing gas of ammonia can be used, and in the formation of the insulating layer 114, a mixed gas including a deposition gas of monosilane, an oxidizing gas of dinitrogen monoxide (N₂O), and ammonia can be used. Here, in the first plasma treatment and the formation of the insulating layer 114, dinitrogen monoxide (N₂O) and ammonia can be used in common. That is, the first plasma treatment is performed using dinitrogen monoxide (N₂O) and ammonia; and then, a monosilane gas is supplied, whereby the insulating layer 114 can be formed. Since the first plasma treatment and the formation of the insulating layer 114 can be performed successively in the same treatment chamber in this manner, impurities at the interface between the semiconductor layer 108 and the insulating layer 114 can be reduced; thus, the interface can be favorable.

In the formation of the insulating layer 114, the flow rate of the oxidizing gas is preferably more than 20 times and 200 times or less, further preferably 30 times or more and 150 times or less, still further preferably 40 times or more and 100 times or less, yet still further preferably 40 times or more and 80 times or less as high as the flow rate of the deposition gas.

In the formation of the insulating layer 114, the flow rate of the ammonia gas is preferably lower than or equal to the flow rate of the oxidizing gas. The flow rate of the ammonia gas is preferably 0.01 times or more and 1 time or less, further preferably 0.02 times or more and 0.9 times or less, still further preferably 0.03 times or more and 0.8 times or less, yet further preferably 0.04 times or more and 0.6 times or less, yet still further preferably 0.05 times or more and 0.5 times or less as high as the flow rate of the oxidizing gas. With the above-described flow rates of the gases, the insulating layer 114 from which a large amount of ammonia is released can be obtained. Since the amount of nitrogen oxide released from the insulating layer 114 is reduced, a transistor with a small change in the threshold voltage can be obtained. In addition, with the above-described flow rates of the gases, the insulating layer 114 with few defects can be formed even when the pressure in the treatment chamber is relatively high. Note that the preferred flow rate of the ammonia gas with respect to the flow rate of the oxidizing gas may vary depending on the conditions such as pressure and power at the time of forming the insulating layer 114.

The pressure in the treatment chamber at the time of forming the insulating layer 114 is preferably 200 Pa or lower, further preferably 150 Pa or lower, still further preferably 120 Pa or lower, yet still further preferably 100 Pa or lower. With the pressure in the above range, the insulating layer 114 from which a small amount of nitrogen oxide is released and in which the amount of defects is small can be formed.

Note that an insulating layer from which a large amount of ammonia is released and a small amount of nitrogen oxide is released is a film which releases ammonia more than nitrogen oxide in thermal desorption spectroscopy (TDS) analysis; the released amount of ammonia is typically greater than or equal to 1×10¹⁸/cm³ and less than or equal to 5×10¹⁹/cm³. Note that the released amount of ammonia is the released amount in the range of the surface temperature of a film from 50° C. to 650° C., preferably from 50° C. to 550° C.

The insulating layer 114 preferably has a low defect density. When the defect density of the insulating layer 114 is high, oxygen is bonded to the defects and the oxygen permeability of the insulating layer 114 decreases. With the use of the insulating layer 114 having a low defect density, the transistor with a small change in the threshold voltage and excellent electrical characteristics can be obtained. In the case where an insulating film containing silicon is used as the insulating layer 114, for example, the spin density of a signal that appears at g=2.001 due to a dangling bond of silicon is preferably lower than or equal to 3×10¹⁷ spins/cm³ in ESR measurement.

The insulating layer 114 is formed over the semiconductor layer 108, and thus is preferably a film formed under conditions where damage to the semiconductor layer 108 is small. For example, the insulating layer 114 can be formed at a sufficiently low deposition rate. For example, when the insulating layer 114 is formed by a plasma CVD method under a low-power condition, damage to the semiconductor layer 108 can be extremely small.

The insulating layer 116 is preferably formed using an oxide film and further preferably includes a region containing oxygen in excess of that in the stoichiometric composition. In other words, the insulating layer 116 includes an insulating film capable of releasing oxygen. It is also possible to supply oxygen into the insulating layer 116 by forming the insulating layer 116 in an oxygen atmosphere, performing heat treatment or the second plasma treatment on the formed insulating layer 116 in an oxygen atmosphere, or forming an oxide film over the insulating layer 116 in an oxygen atmosphere, for example. Note that the insulating layer 116 includes a region where the released amount of oxygen molecules in TDS is greater than or equal to 1.0×10¹⁹ molecules/cm³, preferably greater than or equal to 3.0×10²⁰ molecules/cm³. The released amount of oxygen is the total amount in the range of the heat treatment temperature in TDS from 50° C. to 650° C. or from 50° C. to 550° C.

The defect density of the insulating layer 116 is preferably low, and typically, the spin density of a signal that appears at g=2.001 due to a dangling bond of silicon is preferably lower than 1.5×10¹⁸ spins/cm³, further preferably lower than or equal to 1×10¹⁸ spins/cm³ by ESR measurement. Note that the insulating layer 116 is more apart from the semiconductor layer 108 than the insulating layer 114 is, and thus may have higher defect density than the insulating layer 114.

As the insulating layer 114 and the insulating layer 116, an insulating layer including one or more kinds of a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can be used, for example.

Insulating films formed of the same kind of material can be used as the insulating layer 114 and the insulating layer 116; thus, a boundary (interface) between the insulating layer 114 and the insulating layer 116 cannot be clearly observed in some cases. Then, in the drawings illustrating one embodiment of the present invention, the boundary is denoted by a dashed line. Although the two-layer structure of the insulating layer 114 and the insulating layer 116 is described in this embodiment, one embodiment of the present invention is not limited thereto. For example, a single-layer structure of the insulating layer 114 or a stacked-layer structure of three or more layers may be employed.

After the insulating layer 114 is formed, the insulating layer 116 is preferably formed successively without exposure of the surface of the insulating layer 114 to the air. The insulating layer 116 is formed successively after the formation of the insulating layer 114, so that attachment of impurities to the interface between the insulating layer 114 and the insulating layer 116 can be inhibited.

The same gas can be used as the gas used for the formation of the insulating layer 114 and the gas used for the formation of the insulating layer 116.

In the formation of the insulating layer 114, a mixed gas including a first deposition gas containing silicon, a second oxidizing gas, and an ammonia gas is used, and in the formation of the insulating layer 116, a mixed gas including a second deposition gas containing silicon and a third oxidizing gas is used. Here, when the same kind of gas is used as the second oxidizing gas and the third oxidizing gas and the same kind of gas is used as the first deposition gas containing silicon and the second deposition gas containing silicon, the same oxidizing gas and the same deposition gas containing silicon can be used in the formation of the insulating layer 114 and the formation of the insulating layer 116. Using the same gases can reduce the kinds of gas used for fabricating the transistor.

A case where the formation of the insulating layer 114 and the insulating layer 116 is performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example.

Here, the insulating layer 114 and the insulating layer 116 are both silicon oxynitride. In the formation of the insulating layer 114, a mixed gas including a deposition gas of monosilane, an oxidizing gas of dinitrogen monoxide (N₂O), and ammonia can be used, and in the formation of the insulating layer 116, a mixed gas including a deposition gas of monosilane and an oxidizing gas of dinitrogen monoxide (N₂O) can be used. Here, in the formation of the insulating layer 114 and the insulating layer 116, monosilane and dinitrogen monoxide (N₂O) can be used in common. That is, the insulating layer 114 is formed using monosilane, dinitrogen monoxide (N₂O), and ammonia; and then, supply of the ammonia gas is stopped, whereby the insulating layer 116 can be formed. Since the formation of the insulating layer 114 and the insulating layer 116 can be performed successively in the same treatment chamber in this manner, impurities at the interface between the insulating layer 114 and the insulating layer 116 can be reduced; thus, the interface can be favorable.

Moreover, in the case where the first plasma treatment is performed as the second cleaning treatment, the same gas is preferably used as the gas used for the first plasma treatment, the gas used for the formation of the insulating layer 114, and the gas used for the formation of the insulating layer 116. Using the same gases can reduce the kinds of gas used for fabricating the transistor.

A case where the first plasma treatment, the formation of the insulating layer 114, and the formation of the insulating layer 116 are performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example. Here, the insulating layer 114 and the insulating layer 116 are silicon oxynitride.

In the first plasma treatment, a mixed gas including an oxidizing gas of dinitrogen monoxide (N₂O) and a reducing gas of ammonia is used. In the formation of the insulating layer 114, a mixed gas including a deposition gas of monosilane, an oxidizing gas of dinitrogen monoxide (N₂O), and ammonia is used. In the formation of the insulating layer 116, a mixed gas including a deposition gas of monosilane and an oxidizing gas of dinitrogen monoxide (N₂O) is used. Here, in the first plasma treatment, the formation of the insulating layer 114, and the formation of the insulating layer 116, an oxidizing gas of dinitrogen monoxide (N₂O) can be used in common. In the plasma treatment and the formation of the insulating layer 114, ammonia can be used in common. In the formation of the insulating layer 114 and the formation of the insulating layer 116, a deposition gas of monosilane can be used in common. That is, the first plasma treatment is performed using dinitrogen monoxide (N₂O) and ammonia; and then, a monosilane gas is supplied, whereby the insulating layer 114 can be formed. After that, supply of the ammonia gas is stopped, whereby the insulating layer 116 can be formed. Since the first plasma treatment, the formation of the insulating layer 114, and the formation of the insulating layer 116 can be performed successively in the same treatment chamber in this manner, impurities at the interface between the semiconductor layer 108 and the insulating layer 114 and the interface between the insulating layer 114 and the insulating layer 116 can be reduced; thus, the interfaces can be favorable.

Furthermore, after the insulating layer 114 is formed, the second plasma treatment is preferably performed on the surface of the insulating layer 114. An oxygen-containing gas is preferably used for the second plasma treatment. The second plasma treatment can be performed in an atmosphere containing an oxidizing gas. As the oxidizing gas, the above-described gas can be used. With the use of an oxygen-containing gas for the second plasma treatment, oxygen can be supplied to the insulating layer 114. Oxygen supplied to the insulating layer 114 is diffused into the semiconductor layer 108 by a heat application step to be performed later, and the oxygen can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 (oxygen addition).

It is further preferable that a mixed gas including an ammonia gas in addition to an oxidizing gas be used for the second plasma treatment. The second plasma treatment performed using a mixed gas including an oxidizing gas and an ammonia gas can inhibit generation of nitrogen oxide in the insulating layer 114.

Furthermore, after the insulating layer 116 is formed, third plasma treatment is preferably performed on the surface of the insulating layer 116. An oxygen-containing gas is preferably used for the third plasma treatment. The third plasma treatment can be performed in an atmosphere containing an oxidizing gas. As the oxidizing gas, the above-described gas can be used. With the use of an oxygen-containing gas for the third plasma treatment, oxygen can be supplied to the insulating layer 116. Oxygen supplied to the insulating layer 116 is diffused into the semiconductor layer 108 through the insulating layer 114 by a heat application step to be performed later, and the oxygen can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 (oxygen addition).

It is further preferable that a mixed gas including an ammonia gas in addition to an oxidizing gas be used for the third plasma treatment. The third plasma treatment performed using a mixed gas including an oxidizing gas and an ammonia gas can inhibit generation of nitrogen oxide in the insulating layer 116.

By the third plasma treatment, impurities such as water adsorbed on the surface of the insulating layer 116 can be reduced. In the case where impurities such as water are adsorbed on the surface of the insulating layer 116, the impurities may reach the semiconductor layer 108 and thus V_(o), V_(o)H, and the like might be formed in the semiconductor layer 108. Plasma treatment performed on the surface of the insulating layer 116 can inhibit adsorption of impurities such as water on the surface of the insulating layer 116, which enables the transistor to have high reliability. The plasma treatment is particularly suitable in the case where the surface of the insulating layer 116 is exposed to the air after the formation of the insulating layer 116 before the formation of the insulating layer 118. For example, the plasma treatment can be performed in an atmosphere of oxygen, ozone, nitrogen, dinitrogen monoxide, argon, or the like. In order to inhibit adsorption of impurities such as water on the insulating layer 116, it is particularly suitable to use nitrogen for the third plasma treatment. The formation of the insulating layer 116 and the third plasma treatment are preferably performed successively without exposure to the air.

The insulating layer 118 has a function of a protective film of the transistor 10. The insulating layer 118 inhibits diffusion of impurities such as water and hydrogen into the transistor 10 from the outside of the transistor 10. That is, the reliability and moisture resistance of the transistor 10 can be improved, so that a semiconductor device can have increased reliability.

The insulating layer 118 preferably functions as a barrier film that inhibits diffusion of impurities such as water and hydrogen into the transistor 10 from the outside of the transistor 10. The amount of impurities including hydrogen, such as water and hydrogen, released from the insulating layer 118 itself is preferably small. In addition, the insulating layer 118 preferably functions as a barrier film that inhibits diffusion of oxygen. As the insulating layer 118, for example, an oxide film of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, or the like or a nitride film of silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be used. It is particularly suitable to use silicon nitride for the insulating layer 118.

Here, when heat is applied in the state where the insulating layer 116 is exposed, oxygen contained in the insulating layer 114 and the insulating layer 116 might be released to the outside. Release of oxygen contained in the insulating layer 114 and the insulating layer 116 to the outside reduces the amount of oxygen contained in the insulating layer 114 and the insulating layer 116, which may reduce the amount of oxygen to be supplied to the semiconductor layer 108. Thus, a temperature at which the formation of at least the insulating layer 118 is started is preferably a temperature at which oxygen contained in the insulating layer 114 and the insulating layer 116 is not released to the outside. When the insulating layer 118 has a function of inhibiting diffusion of oxygen and the insulating layer 118 is formed at a temperature at which oxygen contained in the insulating layer 114 and the insulating layer 116 is not released to the outside, oxygen can be supplied to the semiconductor layer 108 and oxygen vacancies in the semiconductor layer 108 can be filled efficiently.

The insulating layer 118 having a function of inhibiting diffusion of impurities such as water and hydrogen and a function of inhibiting diffusion of oxygen is preferably a dense film. For example, a dense film can be obtained when a substrate temperature at the time of forming the insulating layer 118 is increased.

The substrate temperature at the time of forming the insulating layer 118 is preferably higher than or equal to 180° C. and lower than or equal to 400° C., further preferably higher than or equal to 200° C. and lower than or equal to 380° C., still further preferably higher than or equal to 220° C. and lower than or equal to 360° C., yet still further preferably higher than or equal to 240° C. and lower than or equal to 350° C. With the substrate temperature in the above range, release of oxygen contained in the insulating layer 114 and the insulating layer 116 to the outside can be inhibited and the insulating layer 118 can be a dense film.

With such a structure, a transistor that has favorable electrical characteristics and extremely high reliability can be obtained.

The above is the description of Structure example 1-1.

A structure example of a transistor whose structure is partly different from that of Structure example 1-1 shown above will be described below. Note that description of the same portions as those in Structure example 1-1 shown above is omitted below in some cases. Furthermore, in drawings that are referred to later, the same hatching pattern is applied to portions having functions similar to those in Structure example 1-1 shown above, and the portions are not denoted by reference numerals in some cases.

Structure Example 1-2

FIG. 1B illustrates a schematic cross-sectional view of a transistor 10A of one embodiment of the present invention in the channel length direction. The transistor 10A is different from the above-described transistor 10 mainly in the structure of the insulating layer 106 a. In the transistor 10A, the insulating layer 106 a has a stacked-layer structure of an insulating layer 106 a 1, an insulating layer 106 a 2 over the insulating layer 106 a 1, and an insulating layer 106 a 3 over the insulating layer 106 a 2.

FIG. 1B illustrates an example where the insulating layer 106 has a structure in which the insulating layer 106 a 1, the insulating layer 106 a 2, the insulating layer 106 a 3, and the insulating layer 106 b are stacked in this order from the conductive layer 104 side. The insulating layer 106 a 1 is in contact with the conductive layer 104. The insulating layer 106 b is in contact with the semiconductor layer 108.

The insulating layer 106 a preferably satisfies at least one of the following characteristics, most preferably satisfies all of the following characteristics: inhibition of diffusion of impurities such as water, hydrogen, and sodium, inhibition of diffusion of the component of the conductive layer 104, a small absolute value of stress, high withstand voltage, and a small released amount of impurities such as water and hydrogen.

As each of the insulating layer 106 a 1, the insulating layer 106 a 2, and the insulating layer 106 a 3 positioned on the conductive layer 104 side, the insulating film that can be used as the insulating layer 106 a can be used. The four insulating films included in the insulating layer 106 are preferably formed successively without exposure to the air with a plasma CVD apparatus.

The insulating layer 106 a 1 preferably functions as a barrier film that inhibits diffusion of impurities such as water, hydrogen, and sodium into the transistor 10 from the formation surface side of the insulating layer 106. In addition, the insulating layer 106 a 1 preferably functions as a barrier film that inhibits diffusion of the component of the conductive layer 104 into the transistor 10. The insulating layer 106 a 2 preferably has a small absolute value of stress and high withstand voltage. The amount of impurities such as water and hydrogen released from the insulating layer 106 a 3 itself is preferably small. The insulating layer 106 a 3 preferably functions as a barrier film that inhibits diffusion of impurities such as water and hydrogen from below the insulating layer 106 a 2 into the transistor 10 from the formation surface side of the insulating layer 106.

The insulating layer 106 a 1 and the insulating layer 106 a 3 are preferably dense films that can prevent diffusion of impurities from below them. An insulating film that is formed at a lower deposition rate than the insulating layer 106 a 2 can be used as each of the insulating layer 106 a 1 and the insulating layer 106 a 3. Meanwhile, an insulating film that has a small absolute value of stress and is formed at a high deposition rate is preferably used as the insulating layer 106 a 2. The insulating layer 106 a 2 preferably has a larger thickness than the insulating layer 106 a 1 and the insulating layer 106 a 3.

Even when the same kind of film, e.g., a silicon nitride film formed by a plasma CVD method, is used as the insulating layer 106 a 1, the insulating layer 106 a 2, and the insulating layer 106 a 3, the insulating layer 106 a 2 becomes a film whose film density is lower than that of the insulating layer 106 a 1 and the insulating layer 106 a 3. Thus, in a transmission electron microscope (TEM) image or the like of a cross section of the insulating layer 106, a difference in contrast can be observed in some cases. Note that a boundary between the insulating layer 106 a 1 and the insulating layer 106 a 2 and a boundary (interface) between the insulating layer 106 a 2 and the insulating layer 106 a 3 cannot be clearly observed in some cases. Then, in the drawings illustrating one embodiment of the present invention, the boundaries are denoted by dashed lines.

With such a structure, a transistor that has favorable electrical characteristics and extremely high reliability can be obtained.

Structure Example 1-3

FIG. 2A illustrates a schematic cross-sectional view of a transistor 10B of one embodiment of the present invention in the channel length direction. The transistor 10B is different from the above-described transistor 10 mainly in that a conductive layer 120 is provided over the insulating layer 118.

The semiconductor layer 108 is positioned between the conductive layer 104 and the conductive layer 120, and the conductive layer 104, the semiconductor layer 108, and the conductive layer 120 include a region where they overlap with one another. The transistor 10B is a dual-gate transistor including the conductive layer 104 functioning as a gate electrode and the conductive layer 120 functioning as a back gate electrode over and under the semiconductor layer 108. In the transistor 10B, part of the insulating layer 106 functions as a first gate insulating layer, and part of each of the insulating layer 114, the insulating layer 116, and the insulating layer 118 functions as a second gate insulating layer.

For example, when the same potential is supplied to the conductive layer 104 and the conductive layer 120, the amount of current that can flow in the transistor 10B in an on state can be increased. In the transistor 10B, a potential for controlling the threshold voltage can be supplied to one of the conductive layer 104 and the conductive layer 120, and a potential for controlling an on/off state of the transistor 10B can be supplied to the other.

With such a structure, a transistor that has favorable electrical characteristics and extremely high reliability can be obtained.

Structure Example 1-4

FIG. 2B illustrates a schematic cross-sectional view of a transistor 10C of one embodiment of the present invention in the channel length direction. The transistor 10C is different from the above-described transistor 10 mainly in the structure of the insulating layer 106 and in including the conductive layer 120. The transistor 10C is an example of the case where the conductive layer 120 in the transistor 10B described in Structure example 1-3 above is used in the transistor 10A described in Structure example 1-2 above.

With such a structure, a transistor that has favorable electrical characteristics and extremely high reliability can be provided.

Structure Example 2

A more specific structure example of a transistor will be described below.

Structure Example 2-1

FIG. 3A is a top view of a transistor 100, FIG. 3B corresponds to a cross-sectional view of a cut plane along the dashed-dotted line A1-A2 shown in FIG. 3A, and FIG. 3C corresponds to a cross-sectional view of a cut plane along the dashed-dotted line B1-B2 shown in FIG. 3A. The direction of the dashed-dotted line A1-A2 corresponds to a channel length direction, and the direction of the dashed-dotted line B1-B2 corresponds to a channel width direction. Note that in FIG. 3A, some components (e.g., a gate insulating layer) of the transistor 100 are not illustrated. Some components are not illustrated in top views of transistors in the following drawings, as in FIG. 3A. FIG. 4A illustrates an enlarged cross-sectional view of a region P surrounded by a dashed-dotted line in FIG. 3B.

The transistor 100 is provided over a substrate 102 and includes the conductive layer 104, the insulating layer 106, the semiconductor layer 108, the conductive layer 112 a, the conductive layer 112 b, and the like. The insulating layer 106 is provided to cover the conductive layer 104. The semiconductor layer 108 has an island-like shape and is provided over the insulating layer 106. The conductive layer 112 a and the conductive layer 112 b are each in contact with a top surface of the semiconductor layer 108 and are apart from each other over the semiconductor layer 108. In addition, the insulating layer 114 is provided to cover the insulating layer 106, the conductive layer 112 a, the conductive layer 112 b, and the semiconductor layer 108, and the insulating layer 116 is provided over the insulating layer 114.

The transistor 100 is what is called a bottom-gate transistor, in which the conductive layer 104 functioning as the gate electrode is provided more on the substrate 102 side than the semiconductor layer 108. Here, a side of the semiconductor layer 108 opposite to the conductive layer 104 side is sometimes referred to as a back channel side. The transistor 100 has what is called a channel-etched structure in which no protective layer is provided between the back channel side of the semiconductor layer 108 and source and drain electrodes.

The semiconductor layer 108 has a stacked-layer structure in which the semiconductor layer 108 a and the semiconductor layer 108 b are stacked in this order from the substrate 102 side. Each of the semiconductor layer 108 a and the semiconductor layer 108 b preferably includes a metal oxide. The semiconductor layer 108 b, which is positioned on the back channel side, preferably has higher crystallinity than the semiconductor layer 108 a, which is positioned on the conductive layer 104 side. With this structure, the semiconductor layer 108 can be inhibited from being partly etched and lost at the time of processing of the conductive layer 112 a and the conductive layer 112 b.

For example, the semiconductor layer 108 preferably contains indium, an element M (the element M is one or more kinds selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, the element M is preferably aluminum, gallium, yttrium, or tin.

It is particularly preferable to use an oxide containing indium, gallium, and zinc for the semiconductor layer 108.

The semiconductor layer 108 a and the semiconductor layer 108 b may have the same composition or substantially the same compositions. When the semiconductor layer 108 a and the semiconductor layer 108 b have the same composition or substantially the same compositions, the semiconductor layer 108 a and the semiconductor layer 108 b can be formed using the same sputtering target, reducing the manufacturing cost.

As the semiconductor layer 108 a and the semiconductor layer 108 b, layers with different compositions, layers with different crystallinities, or layers with different impurity concentrations may be used. A stacked-layer structure of three or more layers may also be employed.

The conductive layer 112 a and the conductive layer 112 b each have a stacked-layer structure in which the conductive layer 113 a, the conductive layer 113 b, and the conductive layer 113 c are stacked in this order from the substrate 102 side.

The conductive layer 113 b is preferably formed using a low-resistance conductive material containing copper, silver, gold, aluminum, or the like. It is particularly preferable that the conductive layer 113 b contain copper or aluminum. For the conductive layer 113 b, a conductive material having lower resistance than the conductive layer 113 a and the conductive layer 113 c is preferably used. In that case, the conductive layer 112 a and the conductive layer 112 b can have extremely low resistance.

The conductive layer 113 a and the conductive layer 113 c can be each independently formed using a conductive material different from that of the conductive layer 113 b. For example, it is preferable that the conductive layer 113 a and the conductive layer 113 c be each independently formed using a conductive material containing titanium, tungsten, molybdenum, chromium, tantalum, zinc, indium, platinum, ruthenium, or the like.

When the conductive layer 113 b containing copper, aluminum, or the like is sandwiched between the conductive layer 113 a and the conductive layer 113 c as described above, it is possible to inhibit oxidation of a surface of the conductive layer 113 b and diffusion of an element contained in the conductive layer 113 b into neighboring layers. Specifically, provision of the conductive layer 113 a between the semiconductor layer 108 and the conductive layer 113 b can prevent diffusion of a metal element contained in the conductive layer 113 b into the semiconductor layer 108, thereby enabling the transistor 100 to have high reliability.

Here, the insulating layer 114 is provided in contact with an end portion of the conductive layer 113 b. According to one embodiment of the present invention, even when a conductive material that is easily oxidized is used for the conductive layer 113 b and the insulating layer 114 that includes an oxide film is formed over the conductive layer 113 b, a surface of the conductive layer 113 b can be inhibited from being oxidized, as described later. Thus, another layer that contains an oxide or the like is not observed at the interface between the conductive layer 113 b and the insulating layer 114, which is one of the features of one embodiment of the present invention.

Note that the structure of the conductive layer 112 a and the conductive layer 112 b is not limited to a three-layer structure and may be a two-layer structure or a four-layer structure including a conductive layer containing copper, silver, gold, or aluminum. For example, the conductive layer 112 a and the conductive layer 112 b may each have a two-layer structure in which the conductive layer 113 a and the conductive layer 113 b are stacked or a two-layer structure in which the conductive layer 113 b and the conductive layer 113 c are stacked.

The surface of the semiconductor layer 108 might be damaged at the time of forming the conductive layer 112 a and the conductive layer 112 b. The damaged layer is preferably removed because V_(o) is formed in the damaged semiconductor layer 108 and hydrogen in the semiconductor layer 108 enters V_(o) to form V_(o)H in some cases. Removing the damaged layer allows the transistor to have favorable electrical characteristics and high reliability. FIG. 4B illustrates an example of a structure in which the damaged layer is removed. FIG. 4B is an enlarged cross-sectional view of the region P surrounded by the dashed-dotted line in FIG. 3B. FIG. 4B illustrates an example in which the thickness of a region of the semiconductor layer 108 b that overlaps with neither the conductive layer 112 a nor the conductive layer 112 b is smaller than the thickness of a region that overlaps with either the conductive layer 112 a or the conductive layer 112 b.

Although FIG. 4A and FIG. 4B illustrate an example in which the end portions of the conductive layer 113 a, the conductive layer 113 b, and the conductive layer 113 c are aligned with one another or substantially aligned with one another, one embodiment of the present invention is not limited thereto. It is not necessary that any of the end portions of the conductive layer 113 a, the conductive layer 113 b, and the conductive layer 113 c is aligned with the others or substantially aligned with the others.

As illustrated in FIG. 4C, the end portions of the conductive layer 113 b and the conductive layer 113 c are preferably located inward from the end portion of the conductive layer 113 a. The end portion of the conductive layer 113 c is further preferably aligned with or substantially aligned with the end portion of the conductive layer 113 b. With such a structure, the step coverage with the layers (e.g., the insulating layer 114) formed over the conductive layer 113 a, the conductive layer 113 b, the conductive layer 113 c, and the semiconductor layer 108 is improved, which can inhibit generation of defects such as disconnection and voids in the layers.

FIG. 4C illustrates an example in which the end portion of the conductive layer 113 b is located inward from that of the conductive layer 113 a and the end portion of the conductive layer 113 c is aligned with the end portion of the conductive layer 113 b. FIG. 4C is an enlarged cross-sectional view of the region P surrounded by the dashed-dotted line in FIG. 3B. With the structure illustrated in FIG. 4C, steps in the conductive layer 112 a and the conductive layer 112 b become small and the step coverage with the layers (e.g., the insulating layer 118) formed over the conductive layer 112 a, the conductive layer 112 b, and the semiconductor layer 108 a is improved, which can inhibit generation of defects such as disconnection and voids in the layers.

Although FIG. 4C illustrates an example in which the end portions of the conductive layer 113 b and the conductive layer 113 c are aligned with or substantially aligned with each other, one embodiment of the present invention is not limited thereto. It is not necessary that the end portions of the conductive layer 113 b and the conductive layer 113 c are aligned with or substantially aligned with each other. Note that in the case where the end portion of the conductive layer 113 b is located inward from the end portion of the conductive layer 113 c, the step coverage with the layers (e.g., the insulating layer 118) formed over the conductive layer 112 a, the conductive layer 112 b, and the semiconductor layer 108 a might be poor, which might generate defects such as disconnection and voids in the layers. Thus, the end portion of the conductive layer 113 c is preferably located inward from the end portion of the conductive layer 113 b.

For the conductive layer 104, any of the above conductive materials that can be used for the conductive layer 113 a and the conductive layer 113 b can be used as appropriate. The use of a conductive material containing copper is particularly preferable.

For the insulating layer 106 and the insulating layer 114 that are in contact with the semiconductor layer 108, an insulating material containing an oxide is preferably used. In the case where the insulating layer 106 or the insulating layer 114 has a stacked-layer structure, an insulating material containing an oxide is used for a layer in contact with the semiconductor layer 108.

For the insulating layer 106, a nitride film of silicon nitride, aluminum nitride, or the like may be used. In the case where an insulating material containing no oxide is used, treatment for adding oxygen to an upper portion of the insulating layer 106 is preferably performed to form an oxygen-containing region. Examples of the treatment for adding oxygen include heat treatment or plasma treatment in an oxygen-containing atmosphere, and ion doping treatment.

In the semiconductor layer 108, a pair of low-resistance regions, which are positioned in portions in contact with the conductive layer 112 a and the conductive layer 112 b and in the vicinity thereof and function as a source region and a drain region, may be formed. The regions are part of the semiconductor layer 108 and have lower resistance than the channel formation region. The low-resistance regions can also be referred to as regions with high carrier concentrations, n-type regions, or the like. In the semiconductor layer 108, a region that is sandwiched between the pair of low-resistance regions and overlaps with the conductive layer 104 functions as a channel formation region.

The above is the description of Structure example 2-1.

Structure Example 2-2

A structure example of a transistor whose structure is partly different from that of Structure example 2-1 shown above will be described below. Note that description of the same portions as those in Structure example 2-1 shown above is omitted below in some cases. Furthermore, in drawings that are referred to later, the same hatching pattern is applied to portions having functions similar to those in Structure example 2-1 shown above, and the portions are not denoted by reference numerals in some cases.

FIG. 5A is a top view of a transistor 100A, FIG. 5B is a cross-sectional view of a transistor 100B in the channel length direction, and FIG. 5C is a cross-sectional view in the channel width direction.

The transistor 100A is different from the transistor 100 in Structure example 2-1 mainly in that a conductive layer 120 a and a conductive layer 120 b are provided over the insulating layer 116.

The conductive layer 120 a includes a region overlapping with the semiconductor layer 108 with the insulating layer 116 and the insulating layer 114 therebetween.

In the transistor 100A, the conductive layer 104 has a function of a first gate electrode (also referred to as a bottom gate electrode), and the conductive layer 120 a has a function of a second gate electrode (also referred to as a top gate electrode). A portion of the insulating layer 116 and insulating layer 114 functions as a second gate insulating layer.

As illustrated in FIG. 5C, the conductive layer 120 a may be electrically connected to the conductive layer 104 through an opening 142 b provided in the insulating layer 116, the insulating layer 114, and the insulating layer 106. Accordingly, the same potential can be supplied to the conductive layer 120 a and the conductive layer 104, which enables a transistor having high on-state current to be provided.

As illustrated in FIG. 5A and FIG. 5C, the conductive layer 104 and the conductive layer 120 a preferably extend beyond the end portion of the semiconductor layer 108 in the channel width direction. In that case, as illustrated in FIG. 5C, the semiconductor layer 108 in the channel width direction is entirely surrounded by the conductive layer 104 and the conductive layer 120 a.

With such a structure, the semiconductor layer 108 can be electrically surrounded by electric fields generated by the pair of gate electrodes. In that case, it is particularly preferable that the same potential be supplied to the conductive layer 104 and the conductive layer 120 a. In that case, electric fields for inducing a channel can be effectively applied to the semiconductor layer 108, whereby the on-state current of the transistor 100A can be increased. Thus, the transistor 100A can also be miniaturized.

Note that a structure in which the conductive layer 104 and the conductive layer 120 a are not connected to each other may be employed. In that case, a constant potential may be supplied to one of the pair of gate electrodes, and a signal for driving the transistor 100A may be supplied to the other. In that case, the potential supplied to one of the gate electrodes enables control of the threshold voltage at the time of driving the transistor 100A with the other gate electrode.

The conductive layer 120 b is electrically connected to the conductive layer 112 b through an opening 142 a provided in the insulating layer 116 and the insulating layer 114. The conductive layer 120 b can be used as a wiring or an electrode. When used in a display device, for example, the conductive layer 120 b can function as a pixel electrode or a wiring for connection to a pixel electrode.

The above is the description of Structure example 2-2.

Structure Example 2-3

A transistor 100B illustrated in FIG. 6A and FIG. 6B is different from the transistor 100A in Structure example 2-2 above mainly in that the end portion of the insulating layer 106 b is substantially aligned with the end portion of the conductive layer 112 a or the end portion of the conductive layer 112 b in a cross-sectional view in the channel length direction. In a cross-sectional view of the transistor 100B in the channel width direction, the end portion of the insulating layer 106 b is substantially aligned with the end portion of the semiconductor layer 108.

The insulating layer 106 a includes a region in contact with the insulating layer 106 b in a region overlapping with the semiconductor layer 108, the conductive layer 112 a, or the conductive layer 112 b. In addition, the insulating layer 106 a includes a region in contact with the insulating layer 114 in a region overlapping with neither the semiconductor layer 108, the conductive layer 112 a, nor the conductive layer 112 b.

The insulating layer 106 a preferably functions as an etching stopper at the time of forming the conductive layer 112 a and the conductive layer 112 b. For example, in the case where an oxide film of silicon oxide, silicon oxynitride, or the like is used as the insulating layer 106 b, an oxide film of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, or the like or a nitride film of silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be suitably used as the insulating layer 106 a.

With the insulating layer 106 a functioning as an etching stopper, steps in the end portions of the conductive layer 112 a and the conductive layer 112 b become small and the step coverage with the layers (e.g., the insulating layer 114) formed over the conductive layer 112 a and the conductive layer 112 b is improved, which can inhibit generation of defects such as disconnection and voids in the layers.

Although the thickness of the insulating layer 106 a in the region overlapping with neither the semiconductor layer 108, the conductive layer 112 a, nor the conductive layer 112 b is the same as the thickness of the insulating layer 106 a in the region overlapping with the semiconductor layer 108, the conductive layer 112 a, or the conductive layer 112 b in FIG. 6A and FIG. 6B, one embodiment of the present invention is not limited thereto and the thicknesses may be different from each other. For example, the thickness of the insulating layer 106 a in the region overlapping with neither the semiconductor layer 108, the conductive layer 112 a, nor the conductive layer 112 b may be smaller than the thickness of the insulating layer 106 a in the region overlapping with the semiconductor layer 108, the conductive layer 112 a, or the conductive layer 112 b.

The above is the description of Structure example 2-3.

Structure Example 2-4

A transistor 100C illustrated in FIG. 7A and FIG. 7B is different from the transistor 100A in Structure example 2-2 above mainly in that the end portion of the insulating layer 106 b is substantially aligned with the end portion of the semiconductor layer 108 in a cross-sectional view in the channel length direction. In a cross-sectional view of the transistor 100B in the channel width direction, the end portion of the insulating layer 106 b is substantially aligned with the end portion of the semiconductor layer 108.

The insulating layer 106 a includes a region in contact with the insulating layer 106 b in a region overlapping with the semiconductor layer 108. In addition, the insulating layer 106 a includes a region in contact with the insulating layer 114 in a region overlapping with neither the semiconductor layer 108, the conductive layer 112 a, nor the conductive layer 112 b.

The insulating layer 106 a preferably functions as an etching stopper at the time of forming the semiconductor layer 108. With the insulating layer 106 a functioning as an etching stopper, a step in the end portion of the semiconductor layer 108 becomes small and the step coverage with the layers (e.g., the conductive layer 112 a and the conductive layer 112 b) formed over the semiconductor layer 108 is improved, which can inhibit generation of defects such as disconnection and voids in the layers.

Although the thickness of the insulating layer 106 a in the region not overlapping with the semiconductor layer 108 is the same as the thickness of the insulating layer 106 a in the region overlapping with the semiconductor layer 108 in FIG. 7A and FIG. 7B, one embodiment of the present invention is not limited thereto and the thicknesses may be different from each other. For example, the thickness of the insulating layer 106 a in the region not overlapping with the semiconductor layer 108 may be smaller than the thickness of the insulating layer 106 a in the region overlapping with the semiconductor layer 108.

The above is the description of Structure example 2-4.

Fabrication Method Example 1

A method for fabricating the semiconductor device of one embodiment of the present invention will be described below with reference to drawings. Here, description will be made giving, as an example, the transistor 100A described above in Structure example 2-2.

Note that thin films that form the semiconductor device (insulating films, semiconductor films, conductive films, and the like) can be formed by a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, or the like. Examples of the CVD method include a plasma-enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. In addition, as an example of the thermal CVD method, a metal organic chemical vapor deposition (MOCVD) method can be given.

The thin films that form the semiconductor device (insulating films, semiconductor films, conductive films, and the like) can be formed by a method such as spin coating, dipping, spray coating, ink-jetting, dispensing, screen printing, or offset printing, or with a tool such as a doctor knife, a slit coater, a roll coater, a curtain coater, or a knife coater.

When the thin films that form the semiconductor device are processed, a photolithography method or the like can be used for the processing. Besides, a nanoimprinting method, a sandblasting method, a lift-off method, or the like may be used for the processing of the thin films. Island-shaped thin films may be directly formed by a deposition method using a blocking mask such as a metal mask.

There are two typical examples of a photolithography method. In one of the methods, a resist mask is formed over a thin film that is to be processed, the thin film is processed by etching or the like, and the resist mask is removed. In the other method, after a photosensitive thin film is formed, exposure and development are performed, so that the thin film is processed into a desired shape.

For light used for exposure in a photolithography method, for example, an i-line (with a wavelength of 365 nm), a g-line (with a wavelength of 436 nm), an h-line (with a wavelength of 405 nm), or combined light of any of them can be used. Besides, ultraviolet light, KrF laser light, ArF laser light, or the like can be used. Exposure may be performed by liquid immersion exposure technique. Furthermore, as the light used for the exposure, extreme ultra-violet (EUV) light or X-rays may be used. Furthermore, instead of the light used for the exposure, an electron beam can also be used. It is preferable to use extreme ultra-violet light, X-rays, or an electron beam because extremely minute processing can be performed. Note that in the case of performing exposure by scanning of a beam such as an electron beam, a photomask is not needed.

For etching of the thin film, a dry etching method, a wet etching method, a sandblasting method, or the like can be used.

FIG. 8 to FIG. 12 are drawings illustrating an example of a method for fabricating the transistor 100A. In each drawing, a cross section in the channel length direction is shown on the left side, and a cross section in the channel width direction is shown on the right side.

[Formation of Conductive Layer 104]

A conductive film is formed over the substrate 102, a resist mask is formed by a lithography process over the conductive film, and then the conductive film is etched, whereby the conductive layer 104 functioning as a gate electrode is formed.

[Formation of Insulating Layer 106]

Next, the insulating layer 106 covering the conductive layer 104 and the substrate 102 is formed (FIG. 8A). The insulating layer 106 can be formed by a PECVD method or the like, for example.

Heat treatment may be performed after the formation of the insulating layer 106. By the heat treatment, water or hydrogen can be released from the surface and inside of the insulating layer 106.

The heat treatment temperature is preferably higher than or equal to 150° C. and lower than the strain point of the substrate, further preferably higher than or equal to 250° C. and lower than or equal to 450° C., still further preferably higher than or equal to 300° C. and lower than or equal to 450° C. The heat treatment can be performed in an atmosphere containing one or more of a rare gas, nitrogen, and oxygen. As a nitrogen-containing atmosphere or an oxygen-containing atmosphere, clean dry air (CDA) may be used. Note that the content of hydrogen, water, or the like in the atmosphere is preferably as low as possible. As the atmosphere, a high-purity gas with a dew point of −60° C. or lower, preferably −100° C. or lower is preferably used. With the use of an atmosphere where the content of hydrogen, water, or the like is as low as possible, entry of hydrogen, water, or the like into the insulating layer 106 can be prevented as much as possible. An oven, a rapid thermal annealing (RTA) apparatus, or the like can be used for the heat treatment. The use of the RTA apparatus can shorten the heat treatment time.

Next, treatment for supplying oxygen to the insulating layer 106 may be performed. As the oxygen supply treatment, an oxygen radical, an oxygen atom, an oxygen atomic ion, an oxygen molecular ion, or the like is supplied to the insulating layer 106 by an ion doping method, an ion implantation method, plasma treatment, or the like. Alternatively, a film that inhibits oxygen release may be formed over the insulating layer 106, and then oxygen may be added to the insulating layer 106 through the film. It is preferable to remove the film after addition of oxygen. As the above film that inhibits oxygen release, a conductive film or a semiconductor film containing one or more of indium, zinc, gallium, tin, aluminum, chromium, tantalum, titanium, molybdenum, nickel, iron, cobalt, and tungsten can be used.

[Formation of Semiconductor Layer 108]

Next, a metal oxide film 108 af and a metal oxide film 108 bf are formed to be stacked over the insulating layer 106 (FIG. 8B).

The metal oxide film 108 af and the metal oxide film 108 bf are each preferably formed by a sputtering method using a metal oxide target.

In forming the metal oxide film 108 af and the metal oxide film 108 bf, an oxygen gas and an inert gas (e.g., a helium gas, an argon gas, or a xenon gas) may be mixed. Note that the proportion of the oxygen gas in the whole deposition gas (hereinafter, also referred to as an oxygen flow rate ratio) in forming the metal oxide film can be in the range of 0% to 100% inclusive.

When a metal oxide film with relatively low crystallinity is formed with a low oxygen flow rate ratio, a metal oxide film having high conductivity can be obtained. By contrast, when a metal oxide film with relatively high crystallinity is formed with a high oxygen flow rate ratio, a metal oxide film having high etching resistance and electrical stability can be obtained.

Here, the metal oxide film 108 af positioned on the conductive layer 104 (functioning as a gate electrode) side is a film with low crystallinity, whereas the metal oxide film 108 bf positioned on the back channel side is a film with high crystallinity, which enables a transistor to have high reliability and high field-effect mobility.

The metal oxide film 108 af and the metal oxide film 108 bf are formed under the conditions where a substrate temperature is higher than or equal to room temperature and lower than or equal to 200° C., preferably higher than or equal to room temperature and lower than or equal to 140° C., for example. The substrate temperature during formation of the metal oxide film is preferably, for example, higher than or equal to room temperature and lower than 140° C. because the productivity is increased.

More specifically, the oxygen flow rate during formation of the metal oxide film 108 af is preferably higher than or equal to 0% and lower than 50%, further preferably higher than or equal to 5% and lower than or equal to 30%, still further preferably higher than or equal to 5% and lower than or equal to 20%, typically 10%. The oxygen flow rate ratio during formation of the metal oxide film 108 bf is preferably higher than or equal to 50% and lower than or equal to 100%, further preferably higher than or equal to 60% and lower than or equal to 100%, still further preferably higher than or equal to 70% and lower than or equal to 100%, yet still further preferably higher than or equal to 80% and lower than or equal to 100%, typically 100%.

The metal oxide film 108 af and the metal oxide film 108 bf can be films with the same composition or substantially the same compositions. The metal oxide film 108 af and the metal oxide film 108 bf can be formed using the same sputtering target; thus, the manufacturing cost can be reduced. When the same sputtering target is used, the metal oxide film 108 af and the metal oxide film 108 bf can be formed successively in the same deposition apparatus in a vacuum, which can inhibit entry of impurities into the interface between the semiconductor layer 108 a and the semiconductor layer 108 b. Although conditions during the formation, such as pressure, temperature, and power, may vary between the metal oxide film 108 af and the metal oxide film 108 bf, it is preferable to employ the same conditions except for the oxygen flow rate ratio because the time required for the formation steps can be shortened.

Note that the metal oxide film 108 af and the metal oxide film 108 bf may be films with different compositions from each other. In that case, when an In—Ga—Zn oxide is used for both the metal oxide film 108 af and the metal oxide film 108 bf, an oxide target in which the proportion of the contained In is higher than that in the metal oxide film 108 af is preferably used for the metal oxide film 108 bf.

After the formation of the metal oxide film 108 af and the metal oxide film 108 bf, a resist mask is formed over the metal oxide film 108 bf, the metal oxide film 108 af and the metal oxide film 108 bf are processed by etching, and then the resist mask is removed, whereby the island-shaped semiconductor layer 108 in which the semiconductor layer 108 a and the semiconductor layer 108 b are stacked can be formed (FIG. 8C).

For processing of the metal oxide film 108 af and the metal oxide film 108 bf, one or both of a wet etching method and a dry etching method can be used.

At the time of forming the semiconductor layer 108, the thickness of the insulating layer 106 in a region not overlapping with the semiconductor layer 108 is sometimes smaller than the thickness of the insulating layer 106 in a region overlapping with the semiconductor layer 108.

Heat treatment may be performed after the metal oxide film 108 af and the metal oxide film 108 bf are formed or processed into the semiconductor layer 108. By the heat treatment, hydrogen or water can be removed from the surfaces and inside of the metal oxide films 108 af and 108 bf or the semiconductor layer 108. In addition, by the heat treatment, the etching rate of the metal oxide films 108 af and 108 bf or the semiconductor layer 108 is lowered, which can inhibit the semiconductor layer 108 from being lost in a later step (e.g., the formation of the conductive layer 112 a and the conductive layer 112 b).

The heat treatment temperature is preferably higher than or equal to 150° C. and lower than the strain point of the substrate, further preferably higher than or equal to 250° C. and lower than or equal to 450° C., still further preferably higher than or equal to 300° C. and lower than or equal to 450° C. The heat treatment can be performed in an atmosphere containing one or more of a rare gas and nitrogen. Alternatively, heating may be performed in the atmosphere, and then heating may further be performed in an oxygen-containing atmosphere. As a nitrogen-containing atmosphere or an oxygen-containing atmosphere, ultra clean dry air (CDA) may be used. Note that the content of hydrogen, water, or the like in the atmosphere is preferably as low as possible. As the atmosphere, a high-purity gas with a dew point of −60° C. or lower, preferably −100° C. or lower is preferably used. With the use of an atmosphere where the content of hydrogen, water, or the like is as low as possible, entry of hydrogen, water, or the like into the semiconductor layer 108 can be prevented as much as possible. An oven, a rapid thermal annealing (RTA) apparatus, or the like can be used for the heat treatment. The use of the RTA apparatus can shorten the heat treatment time.

[Formation of Conductive Layer 112 a and Conductive Layer 112 b]

Next, a conductive film 113 af, a conductive film 113 bf, and a conductive film 113 cf covering the insulating layer 106 and the semiconductor layer 108 are formed to be stacked.

The conductive film 113 bf is a film to be the conductive layer 113 b later and preferably contains copper, silver, gold, or aluminum. The conductive film 113 af and the conductive film 113 cf are films to be the conductive layer 113 a and the conductive layer 113 b later, respectively, and each preferably independently contain titanium, tungsten, molybdenum, chromium, tantalum, zinc, indium, platinum, ruthenium, or the like.

The conductive film 113 af, the conductive film 113 bf, and the conductive film 113 cf are preferably formed by a formation method such as a sputtering method, an evaporation method, or a plating method.

Then, a resist mask 140 is formed over the conductive film 113 cf (FIG. 9A).

Next, the conductive film 113 cf, the conductive film 113 bf, and the conductive film 113 af are etched using the resist mask 140 as a mask, whereby the conductive layer 112 a and the conductive layer 112 b each having a structure in which the conductive layer 113 a, the conductive layer 113 b, and the conductive layer 113 c are stacked can be formed (FIG. 9B).

The conductive layer 112 a and the conductive layer 112 b are preferably processed to be apart from each other over a channel formation region of the semiconductor layer 108, as illustrated in FIG. 9B. In other words, the conductive layer 112 a and the conductive layer 112 b are preferably processed such that the end portions of them, which are opposite to each other, overlap with both the conductive layer 104 and the semiconductor layer 108. Accordingly, the on-state current of the transistor can be increased.

At the time of forming the conductive layer 112 a and the conductive layer 112 b, the thickness of the semiconductor layer 108 in a region overlapping with neither the conductive layer 112 a nor the conductive layer 112 b is sometimes smaller than the thickness of the semiconductor layer 108 in a region overlapping with the conductive layer 112 a and the conductive layer 112 b. Similarly, the thickness of the insulating layer 106 in the region overlapping with neither the conductive layer 112 a nor the conductive layer 112 b is sometimes smaller than the thickness of the insulating layer 106 in the region overlapping with the conductive layer 112 a and the conductive layer 112 b.

The conductive film 113 cf, the conductive film 113 bf, and the conductive film 113 af can each be etched by wet etching, dry etching, or the like. The three layers can be etched at a time in one step, or each of the three layers may be sequentially etched in a different process.

[First Cleaning Treatment]

Next, cleaning treatment (hereinafter, referred to as first cleaning treatment) is preferably performed. Examples of the first cleaning treatment include wet cleaning using a cleaning solution or the like, plasma treatment using plasma, and cleaning by heat treatment, and any of these cleanings may be performed in combination as appropriate.

The surface of the semiconductor layer 108 might be damaged at the time of forming the conductive film 113 cf, the conductive film 113 bf, and the conductive film 113 af and at the time of forming the conductive layer 112 a and the conductive layer 112 b. In some cases, V_(o) is formed in the damaged semiconductor layer 108 and hydrogen in the semiconductor layer 108 enters V_(o) to form V_(o)H. The damaged layer can be removed by performing the first cleaning treatment after the formation of the conductive layer 112 a and the conductive layer 112 b. By the first cleaning treatment, a metal, an organic substance, or the like attached to the surface of the semiconductor layer 108 at the time of forming the conductive layer 112 a and the conductive layer 112 b can be removed. Wet cleaning can be suitably used as the first cleaning treatment.

In the case where wet cleaning is employed as the first cleaning treatment, it is preferable to use a cleaning solution in which the etching rate of the conductive layer 112 a and the conductive layer 112 b is lower than the etching rate of the semiconductor layer 108. That is, with the use of a cleaning solution with high oxidizability, the conductive layer 112 a and the conductive layer 112 b might be etched. Thus, a cleaning solution with low oxidizability is preferably used. The use of a cleaning solution with low oxidizability can remove the damaged layer in the semiconductor layer 108 and a metal, an organic substance, or the like attached to the semiconductor layer 108 while inhibiting the etching of the conductive layer 112 a and the conductive layer 112 b in the first cleaning step. In the first cleaning treatment, for example, a cleaning solution containing at least one of phosphoric acid, oxalic acid, and hydrochloric acid is preferably used. In the first cleaning treatment, a cleaning solution containing phosphoric acid can be particularly suitably used. The concentration of a cleaning solution is determined in consideration of the etching rate of the semiconductor layer 108. In the case where a cleaning solution containing phosphoric acid is used in the first cleaning treatment, for example, the concentration of phosphoric acid is preferably higher than or equal to 0.01 weight % and lower than or equal to 5 weight %, further preferably higher than or equal to 0.02 weight % and lower than or equal to 4 weight %, still further preferably higher than or equal to 0.05 weight % and lower than or equal to 3 weight %, yet further preferably higher than or equal to 0.1 weight % and lower than or equal to 2 weight %, yet still further preferably higher than or equal to 0.15 weight % and lower than or equal to 1 weight %. With the concentration in the above range, the semiconductor layer 108 can be inhibited from being lost, and the damaged layer in the semiconductor layer 108 and a metal, an organic substance, or the like attached to the semiconductor layer 108 can be efficiently removed.

The cleaning solution may further contain a compound that forms a complex together with a metal included in the conductive layer 112 a and the conductive layer 112 b (hereinafter, referred to as an additive). In the first cleaning treatment, a cleaning solution containing phosphoric acid and an additive can be suitably used, for example.

The additive has a function of forming a complex by being coordinated to a metal included in the conductive layer 112 a and the conductive layer 112 b. With the use of a cleaning solution containing the additive, a metal escaping from the conductive layer 112 a and the conductive layer 112 b to the cleaning solution is bonded to the additive to be a complex. The complex can stably exist in the cleaning solution; thus, reattachment of the metal to the semiconductor layer 108 from the cleaning solution can be inhibited. Also in the case where the metal is attached to the semiconductor layer 108, the metal is bonded to the additive to be the complex. Then, the complex is dissolved in the cleaning solution, so that the metal attached to the semiconductor layer 108 can be effectively removed.

The case where a conductive material containing copper is used for the conductive layer 112 a and the conductive layer 112 b is described as an example. In some cases, copper escapes from the conductive layer 112 a and the conductive layer 112 b and is attached to the semiconductor layer 108 in a step of forming the conductive layer 112 a and the conductive layer 112 b, the first cleaning step, and the like. Thus, wet cleaning using a cleaning solution containing an additive which forms a copper complex is preferably performed as the first cleaning treatment. In the first cleaning treatment, for example, a cleaning solution containing phosphoric acid and an additive which forms a copper complex can be suitably used. As the additive which forms a copper complex, for example, one or more of ammonia, phthalocyanine, glycine, ethylenediamine, diethylethylenediamine, and ethylenediaminetetraacetic acid (EDTA) can be used. With the use of a cleaning solution containing the additive which forms a copper complex, copper becomes a complex such as tetraammine copper, phthalocyanine copper, bisglycine copper, ethylenediamine copper, diethylethylenediamine copper, or ethylenediaminetetraacetic acid copper. Thus, reattachment of copper to the semiconductor layer 108 can be inhibited and copper attached to the semiconductor layer 108 can be effectively removed.

As a compound that forms a copper complex, a chelate agent such as phthalocyanine, glycine, ethylenediamine, diethylethylenediamine, or ethylenediaminetetraacetic acid (EDTA) can be particularly suitably used. With the use of a chelate agent, copper becomes a chelate complex and the chelate complex can be extremely stable; thus, reattachment of copper to the semiconductor layer 108 can be inhibited and copper attached to the semiconductor layer 108 can be effectively removed. In the first cleaning treatment, a cleaning solution containing ethylenediaminetetraacetic acid (EDTA) and phosphoric acid can be suitably used, for example.

Note that in this specification and the like, a chelate agent refers to a substance having a plurality of coordinations in one molecule.

The concentration of the additive in the cleaning solution is preferably higher than or equal to 10 ppm (weight), further preferably higher than or equal to 20 ppm (weight), still further preferably higher than or equal to 50 ppm (weight), yet further preferably higher than or equal to 100 ppm (weight), yet still further preferably higher than or equal to 200 ppm (weight), yet still further preferably higher than or equal to 300 ppm (weight). With the concentration of the additive in the above range, reattachment of the metal to the semiconductor layer 108 from the cleaning solution can be inhibited and the metal attached to the semiconductor layer 108 can be effectively removed.

The upper limit of the concentration of the additive in the cleaning solution is preferably the solubility of the additive in the cleaning solution. According to International Chemical Safety Card (ICSC), for example, the solubility of ethylenediaminetetraacetic acid (EDTA) in 100-ml water at 20° C. is 0.05 g. That is, the concentration, which is regarded as the solubility, of ethylenediaminetetraacetic acid (EDTA) is approximately 500 ppm (weight). Note that in the case where a cleaning solution in which the amount of dissolved additive is equivalent to the solubility is used, the additive is sometimes precipitated in the cleaning solution. The precipitate in the cleaning solution might cause problems such as clogging of a pipe of an apparatus used for the first cleaning treatment. Thus, the concentration of the additive in the cleaning solution may be lower than the solubility of the additive. For example, the concentration of the additive in the cleaning solution is preferably lower than or equal to approximately 90% of the solubility of the additive. In the case where ethylenediaminetetraacetic acid (EDTA) is used as the additive, the concentration of ethylenediaminetetraacetic acid (EDTA) may be lower than or equal to 450 ppm (weight).

As illustrated in FIG. 9B, the first cleaning treatment is preferably performed in the state where the top surfaces of the conductive layer 112 a and the conductive layer 112 b are covered with the resist mask 140. When the first cleaning treatment is performed in the state where the top surfaces of the conductive layer 112 a and the conductive layer 112 b are covered with the resist mask 140, the conductive layer 113 c can be inhibited from being lost, for example. In addition, when the first cleaning treatment is performed in the state where the top surfaces of the conductive layer 112 a and the conductive layer 112 b are covered with the resist mask 140, the area of the conductive layer 112 a and the conductive layer 112 b exposed at the time of the first cleaning treatment can be reduced, which can inhibit attachment of components of the conductive layer 112 a and the conductive layer 112 b to the semiconductor layer 108.

Next, the resist mask 140 is removed (FIG. 10A).

Note that the first cleaning treatment may be performed after the resist mask 140 is removed.

[Second Cleaning Treatment]

Next, cleaning treatment (hereinafter, referred to as second cleaning treatment) is preferably performed. Examples of the second cleaning treatment include wet cleaning using a cleaning solution or the like, plasma treatment using plasma (first plasma treatment), and cleaning by heat treatment, and any of these cleanings may be performed in combination as appropriate. As the second cleaning treatment, plasma treatment can be suitably used. FIG. 10B schematically illustrates a state in which the surfaces of the semiconductor layer 108, the conductive layer 112 a, the conductive layer 112 b, and the insulating layer 106 are exposed to plasma 130.

In the case where the first plasma treatment is performed as the second cleaning treatment, a mixed gas including an oxidizing gas and a reducing gas is particularly preferably used for the first plasma treatment. With the use of an oxidizing gas and a reducing gas for the first plasma treatment, oxidation of the conductive layer 112 a and the conductive layer 112 b can be inhibited and water, hydrogen, an organic substance, or the like adsorbed on the surface of the semiconductor layer 108 can be effectively removed. As the oxidizing gas, the above-described gas can be used. As the reducing gas, the above-described gas can be used.

The flow rate ratio of the oxidizing gas to the reducing gas in the first plasma treatment can be set in accordance with how easily the conductive layer 113 a, the conductive layer 113 b, and the conductive layer 113 c are oxidized, and the flow rate of the reducing gas is preferably at least lower than or equal to the flow rate of the oxidizing gas. When the flow rate of the reducing gas is much lower than the flow rate of the oxidizing gas, the oxidation reaction of the surface of the conductive layer 113 b and the like becomes predominant, and an oxide is likely to be formed on the surface. By contrast, when the flow rate of the reducing gas is much higher than the flow rate of the oxidizing gas, the surface of the semiconductor layer 108 might be reduced, and the components of the reducing gas (e.g., hydrogen) might be supplied into the semiconductor layer 108.

In the first plasma treatment, the flow rate of the reducing gas with respect to the flow rate of the oxidizing gas is preferably within the above range. Although the surfaces of the conductive layer 113 c, the conductive layer 113 b, and the conductive layer 113 a are also exposed to the plasma 130 in the first plasma treatment, the reducing gas included in the gas used for the first plasma treatment immediately reduces the surfaces even when the surfaces are oxidized; thus, the formation of an oxide is inhibited. This can effectively remove water, hydrogen, an organic substance, or the like adsorbed on the surface of the semiconductor layer 108 while inhibiting oxidation of the conductive layer 113 b even when a material that is easily oxidized, such as copper or aluminum, is used for the conductive layer 113 b, for example.

Here, the case where the reducing gas is not included in the gas used for the first plasma treatment is described. In the case where the reducing gas is not included and the conductive layer 113 b is exposed to plasma, an oxide might be formed in part of the conductive layer 113 b. In the case where a material that is easily oxidized is used also for the conductive layer 113 a and the conductive layer 113 c, an oxide is formed also on their surfaces. The oxidation of at least one of the conductive layer 113 a, the conductive layer 113 b, and the conductive layer 113 c increases resistance, which might adversely affect the electrical characteristics or reliability of the transistor. An oxide formed on the surface of the conductive layer 113 a, the conductive layer 113 b, or the conductive layer 113 c might contaminate the surface of the semiconductor layer 108 b when a portion thereof is scattered during the first plasma treatment or in the later formation of the insulating layer 114. An oxide attached to the semiconductor layer 108 b can function as a donor or an acceptor, which might adversely affect the electrical characteristics or reliability of the transistor. In the case where a copper element diffuses into the semiconductor layer 108, for example, the copper element functions as a carrier trap and might degrade the electrical characteristics or reliability of the transistor.

By contrast, in the case where the reducing gas is included in the gas used for the first plasma treatment, even when the surfaces of the conductive layer 113 c, the conductive layer 113 b, and the conductive layer 113 a, especially the side surface of the conductive layer 113 b, are exposed, the oxidation of the surfaces can be inhibited. Thus, the oxidation of the conductive layer 112 a and the conductive layer 112 b can be inhibited and water, hydrogen, an organic substance, or the like adsorbed on the surface of the semiconductor layer 108 can be effectively removed, which allows the transistor to have high reliability.

The treatment time of the first plasma treatment is preferably adjusted. In the case where the treatment time of the first plasma treatment is long, the oxidation reaction due to the oxidizing gas proceeds, and the surfaces of the conductive layer 113 a, the conductive layer 113 b, and the conductive layer 113 c might be oxidized. In addition, in the case where the treatment time of the first plasma treatment is long, the reduction reaction due to a second gas proceeds, and the surface of the semiconductor layer 108 might be reduced. Thus, the treatment time of the first plasma treatment is preferably adjusted such that the oxidation of the surfaces of the conductive layer 113 a, the conductive layer 113 b, and the conductive layer 113 c and the reduction of the surface of the semiconductor layer 108 can be inhibited. The treatment time of the first plasma treatment is preferably longer than or equal to 5 sec and shorter than or equal to 180 sec, further preferably longer than or equal to 10 sec and shorter than or equal to 120 sec, still further preferably longer than or equal to 15 sec and shorter than or equal to 60 sec, for example. The treatment time in the above range enables the transistor to have favorable electrical characteristics and high reliability.

The pressure in a treatment chamber during the first plasma treatment is preferably higher than or equal to 50 Pa, further preferably higher than or equal to 100 Pa, still further preferably higher than or equal to 150 Pa, yet further preferably higher than or equal to 200 Pa, yet still further preferably higher than or equal to 250 Pa, yet still further preferably higher than or equal to 300 Pa. The pressure in the above range can reduce damage to the semiconductor layer 108. The upper limit of the pressure in the treatment chamber during the first plasma treatment is preferably set to pressure at which plasma is stably generated. For example, the pressure is preferably lower than or equal to 2000 Pa, further preferably lower than or equal to 1500 Pa, still further preferably lower than or equal to 1300 Pa, yet further preferably lower than or equal to 1000 Pa, yet still further preferably lower than or equal to 700 Pa, yet still further preferably lower than or equal to 500 Pa.

An oxygen-containing gas is preferably used for the first plasma treatment. With the use of an oxygen-containing gas, oxygen can be supplied to the semiconductor layer 108. Then, the oxygen can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 (oxygen addition).

[Formation of Insulating Layer 114]

Next, the insulating layer 114 is formed to cover the conductive layer 112 a, the conductive layer 112 b, the semiconductor layer 108, and the insulating layer 106.

The insulating layer 114 is preferably formed in, for example, an oxygen-containing atmosphere. It is particularly preferable that the insulating layer 114 be formed by a plasma CVD method in an oxygen-containing atmosphere. Thus, the insulating layer 114 with few defects can be formed. It is preferable that the amount of ammonia released from the insulating layer 114 be large and the amount of nitrogen oxide released from the insulating layer 114 be small. When the insulating layer 114 from which a large amount of ammonia is released and a small amount of nitrogen oxide is released is used, a change in the threshold voltage of the transistor can be inhibited, which can reduce a change in the electrical characteristics of the transistor.

As the insulating layer 114, for example, an oxide film such as a silicon oxide film or a silicon oxynitride film is preferably formed with a plasma-enhanced chemical vapor deposition apparatus (a PECVD apparatus or simply referred to as a plasma CVD apparatus). In that case, a mixed gas including a deposition gas containing silicon and an oxidizing gas is preferably used as a source gas. It is preferable that the source gas further contain ammonia. The insulating layer 114 formed using a mixed gas containing ammonia can be the insulating layer 114 from which a large amount of ammonia is released. As the deposition gas containing silicon, the above-described gas can be used. As the oxidizing gas, the above-described gas can be used.

In the case where silicon oxynitride is used for the insulating layer 114, for example, the insulating layer 114 can be formed using a mixed gas containing monosilane, dinitrogen monoxide, and ammonia.

In the formation of the insulating layer 114, the flow rate of the oxidizing gas with respect to the flow rate of the deposition gas is preferably within the above range. In addition, the flow rate of the ammonia gas with respect to the flow rate of the oxidizing gas is preferably within the above range. With the flow rates in the above ranges, the insulating layer 114 from which a large amount of ammonia is released can be obtained. Since the amount of nitrogen oxide released from the insulating layer 114 is reduced, a transistor with a small change in the threshold voltage can be obtained. In addition, with the above-described flow rates of the gases, the insulating layer 114 with few defects can be formed even when the pressure in the treatment chamber is relatively high.

The pressure in the treatment chamber at the time of forming the insulating layer 114 is preferably within the above range. With the pressure in the above range, the insulating layer 114 from which a small amount of nitrogen oxide is released and in which the amount of defects is small can be formed.

The substrate temperature at the time of forming the insulating layer 114 is preferably higher than or equal to 150° C. and lower than or equal to 400° C., further preferably higher than or equal to 160° C. and lower than or equal to 350° C., still further preferably higher than or equal to 180° C. and lower than or equal to 300° C., yet still further preferably higher than or equal to 200° C. and lower than or equal to 250° C. With the substrate temperature in the above range, damage to the semiconductor layer 108, which is the formation surface, can be reduced.

The insulating layer 114 may be formed by a PECVD method using a microwave. A microwave refers to a wave in the frequency range of 300 MHz to 300 GHz. In a microwave, electron temperature and electron energy are low. Furthermore, in supplied power, the proportion of power used for acceleration of electrons is low, and power can be used for dissociation and ionization of more molecules; thus, plasma with a high density (high-density plasma) can be excited. Thus, little plasma damage to the formation surface and a deposit is caused, so that the insulating layer 114 with few defects can be formed.

After the first plasma treatment is performed, the formation of the insulating layer 114 is preferably performed successively without exposure of the surface of the semiconductor layer 108 to the air. The first plasma treatment is preferably performed in the deposition apparatus for the insulating layer 114, for example. In that case, the first plasma treatment is preferably performed in the treatment chamber where the insulating layer 114 is formed. Alternatively, a structure may be employed in which the first plasma treatment is performed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber for the insulating layer 114 is performed without exposure to the air and under reduced pressure. In the case where the first plasma treatment and the formation of the insulating layer 114 are successively performed in the same treatment chamber of the same apparatus, the first plasma treatment and the formation of the insulating layer 114 are preferably performed at the same temperature.

A case where the first plasma treatment and the formation of the insulating layer 114 are performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example. Here, the insulating layer 114 is silicon oxynitride.

In the first plasma treatment, a mixed gas including an oxidizing gas of dinitrogen monoxide (N₂O) and a reducing gas of ammonia can be used, and in the formation of the insulating layer 114, a mixed gas including a deposition gas of monosilane, an oxidizing gas of dinitrogen monoxide (N₂O), and ammonia can be used. Here, in the first plasma treatment and the formation of the insulating layer 114, dinitrogen monoxide (N₂O) and ammonia can be used in common. That is, the first plasma treatment is performed using dinitrogen monoxide (N₂O) and ammonia; and then, a monosilane gas is supplied, whereby the insulating layer 114 can be formed. Since the first plasma treatment and the formation of the insulating layer 114 can be performed successively in the same treatment chamber in this manner, impurities at the interface between the semiconductor layer 108 and the insulating layer 114 can be reduced; thus, the interface can be favorable.

After the formation of the insulating layer 114, treatment for supplying oxygen to the insulating layer 114 may be performed. As the treatment for supplying oxygen, a method similar to that for the insulating layer 106 can be used.

[Formation of Insulating Layer 116]

Next, the insulating layer 116 is formed to cover the insulating layer 114 (FIG. 11A).

For the insulating layer 116, an insulating film that is less likely to diffuse oxygen, hydrogen, water, or the like than the insulating layer 114 is preferably used. With the insulating layer 116 that is less likely to diffuse oxygen, oxygen in the semiconductor layer 108 can be prevented from being released to the outside through the insulating layer 114. Furthermore, with the insulating layer 116 that is less likely to diffuse hydrogen, hydrogen, water, or the like can be prevented from diffusing to the semiconductor layer 108 or the like from the outside.

The substrate temperature at the time of forming the insulating layer 116 is preferably higher than or equal to 150° C. and lower than or equal to 400° C., further preferably higher than or equal to 160° C. and lower than or equal to 350° C., still further preferably higher than or equal to 180° C. and lower than or equal to 300° C., yet still further preferably higher than or equal to 200° C. and lower than or equal to 250° C. With the substrate temperature in the above range, an insulating film that is less likely to diffuse oxygen, hydrogen, water, and the like can be obtained.

After the insulating layer 116 is formed, heat treatment is preferably performed. By the heat treatment, oxygen contained in the insulating layer 114 and the insulating layer 116 is diffused into the semiconductor layer 108, and the oxygen can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 (oxygen addition). Specifically, oxygen diffusing into the semiconductor layer 108 fills oxygen vacancies (V_(o)). Oxygen diffusing into the semiconductor layer 108 deprives V_(o)H of hydrogen to be released as a water molecule (H₂O), and V_(o)H that is deprived of hydrogen becomes oxygen vacancies (V_(o)). Furthermore, the oxygen vacancies (V_(o)) generated by depriving V_(o)H of hydrogen are filled with another oxygen reaching the semiconductor layer 108. Reductions in the oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 result in a highly reliable transistor.

Oxygen diffusing into the semiconductor layer 108 reacts with hydrogen remaining in the semiconductor layer 108 to be released as a water molecule (H₂O). That is, hydrogen can be removed from the semiconductor layer 108 (dehydration or dehydrogenation). This can inhibit generation of V_(o)H caused by bonding of hydrogen remaining in the semiconductor layer 108 to the oxygen vacancies (V_(o)).

The heat treatment can remove hydrogen and water contained in the insulating layer 116 and the insulating layer 114. In addition, the heat treatment can reduce defects contained in the insulating layer 116 and the insulating layer 114.

Moreover, by the heat treatment, nitrogen oxide contained in the insulating layer 114 and the insulating layer 116 reacts with ammonia contained in the insulating layer 114, so that the amount of nitrogen oxide contained in the insulating layer 114 and the insulating layer 116 is reduced. A reduction in the amount of nitrogen oxide can inhibit a change in the threshold voltage of the transistor, which can reduce a change in the electrical characteristics of the transistor. The above description can be referred to for the heat treatment; thus, the detailed description thereof is omitted.

[Formation of Insulating Layer 118]

Next, the insulating layer 118 is formed to cover the insulating layer 116 (FIG. 11B).

As the insulating layer 118, an insulating film that is less likely to diffuse oxygen, hydrogen, water, or the like than the insulating layer 114 and the insulating layer 116 is preferably used. The insulating layer 118 that is less likely to diffuse oxygen can inhibit release of oxygen in the insulating layer 116, the insulating layer 114, and the semiconductor layer 108 to the outside. Furthermore, the insulating layer 118 that is less likely to diffuse hydrogen can inhibit diffusion of hydrogen, water, or the like to the semiconductor layer 108 or the like from the outside. It is particularly suitable to use silicon nitride for the insulating layer 118.

[Formation of Conductive Layer 120 a and Conductive Layer 120 b]

Next, the insulating layer 118, the insulating layer 116, and the insulating layer 114 are partly etched, whereby the opening 142 a reaching the conductive layer 112 b and the opening 142 b reaching the conductive layer 104 are formed.

Then, after a conductive film is formed to cover the opening 142 a and the opening 142 b, the conductive film is processed, whereby the conductive layer 120 a and the conductive layer 120 b can be formed (FIG. 12).

Through the above process, the transistor 100A can be fabricated.

Fabrication Method Example 2

A fabrication method of the transistor 100A that is different from the fabrication method in <Fabrication method example 1> shown above will be described. Note that description of the same portions as the above is omitted and different portions will be described.

First, as in <Fabrication method example 1>, the steps up to the first plasma treatment are performed. The description of FIG. 8A to FIG. 10B can be referred to for the steps up to the first plasma treatment; thus, the detailed description thereof is omitted.

[Formation of Insulating Layer 114]

Next, the insulating layer 114 is formed to cover the conductive layer 112 a, the conductive layer 112 b, the semiconductor layer 108, and the insulating layer 106 (FIG. 13A). The above description in <Fabrication method example 1> can be referred to for the formation of the insulating layer 114; thus, the detailed description thereof is omitted.

After the first plasma treatment is performed, the formation of the insulating layer 114 is preferably performed successively without exposure of the substrate 102 to the air. The first plasma treatment is preferably performed in the deposition apparatus for the insulating layer 114, for example. In that case, the first plasma treatment is preferably performed in the treatment chamber where the insulating layer 114 is formed. Alternatively, a structure may be employed in which the first plasma treatment is performed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber for the insulating layer 114 is performed without exposure to the air and under reduced pressure. In the case where the first plasma treatment and the formation of the insulating layer 114 are successively performed in the same treatment chamber of the same apparatus, the first plasma treatment and the formation of the insulating layer 114 are preferably performed at the same temperature.

A case where the first plasma treatment and the formation of the insulating layer 114 are performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example. Here, the insulating layer 114 is silicon oxynitride.

In the first plasma treatment, a mixed gas including an oxidizing gas of dinitrogen monoxide (N₂O) and a reducing gas of ammonia can be used, and in the formation of the insulating layer 114, a mixed gas including a deposition gas of monosilane, an oxidizing gas of dinitrogen monoxide (N₂O), and ammonia can be used. Here, in the first plasma treatment and the formation of the insulating layer 114, dinitrogen monoxide (N₂O) and ammonia can be used in common. That is, the first plasma treatment is performed using dinitrogen monoxide (N₂O) and ammonia; and then, a monosilane gas is supplied, whereby the insulating layer 114 can be formed. Since the first plasma treatment and the formation of the insulating layer 114 can be performed successively in the same treatment chamber in this manner, impurities at the interface between the semiconductor layer 108 and the insulating layer 114 can be reduced; thus, the interface can be favorable. In addition, the productivity can be increased.

In the case where the first plasma treatment and the formation of the insulating layer 114 are performed successively in the same deposition apparatus, the first plasma treatment and the formation of the insulating layer 114 are preferably performed in the same treatment chamber. Alternatively, a structure may be employed in which the first plasma treatment is performed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber where the insulating layer 114 is formed is performed without exposure to the air and under reduced pressure. In the case where the first plasma treatment and the formation of the insulating layer 114 are successively performed in the same treatment chamber of the same apparatus, the first plasma treatment and the formation of the insulating layer 114 are preferably performed at the same temperature.

[Second Plasma Treatment]

Next, the second plasma treatment is performed (FIG. 13B). FIG. 13B schematically illustrates a state in which the surface of the insulating layer 114 is exposed to plasma 132. An oxygen-containing gas is preferably used for the second plasma treatment. The second plasma treatment can be performed in an atmosphere containing an oxidizing gas. As the oxidizing gas, the above-described gas can be used.

With the use of an oxygen-containing gas for the second plasma treatment, oxygen can be supplied to the insulating layer 114. Oxygen supplied to the insulating layer 114 is diffused into the semiconductor layer 108 by a heat application step to be performed later, and the oxygen can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 (oxygen addition). Note that in the case where heat is applied to the substrate 102 during the second plasma treatment, oxygen supplied to the insulating layer 114 during the second plasma treatment might be diffused into the semiconductor layer 108 and thus V_(o) and V_(o)H might be reduced. Oxygen is sometimes directly supplied to the semiconductor layer 108 through the second plasma treatment.

It is further preferable that a mixed gas including an ammonia gas in addition to an oxidizing gas be used for the second plasma treatment. For example, the second plasma treatment performed using an oxidizing gas might generate nitrogen oxide in the insulating layer 114. Thus, the second plasma treatment performed using a mixed gas including an oxidizing gas and an ammonia gas can inhibit generation of nitrogen oxide in the insulating layer 114. Accordingly, a change in the threshold voltage of the transistor can be inhibited, which can reduce a change in the electrical characteristics of the transistor. Note that in the case where heat is applied to the substrate 102 during the second plasma treatment, nitrogen oxide contained in the insulating layer 114 reacts with ammonia contained in the insulating layer 114 during the second plasma treatment, which might reduce the amount of nitrogen oxide.

The ratio of the flow rates of the oxidizing gas and the ammonia gas in the second plasma treatment can be set in accordance with the amount of oxygen supplied to the insulating layer 114 and the amount of nitrogen oxide generated in the insulating layer 114; the flow rate of the ammonia gas is preferably at least lower than or equal to the flow rate of the oxidizing gas. When the flow rate of the ammonia gas is much lower than the flow rate of the oxidizing gas, the amount of ammonia released from the insulating layer 114 is reduced and the amount of nitrogen oxide in the insulating layer 114 becomes large. By contrast, when the flow rate of the ammonia gas is much higher than the flow rate of the oxidizing gas, the amount of oxygen supplied to the insulating layer 114 is reduced, and an effect of reducing oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 might be poor.

In the second plasma treatment, the flow rate of the ammonia gas is preferably 0.001 times or more and 1 time or less, further preferably 0.002 times or more and 0.5 times or less, still further preferably 0.003 times or more and 0.1 times or less, yet further preferably 0.004 times or more and 0.05 times or less, yet still further preferably 0.005 times or more and 0.02 times or less as high as the flow rate of the oxidizing gas. With the above-described flow rates of the gases, oxygen can be efficiently supplied to the insulating layer 114; thus, the insulating layer 114 from which a large amount of ammonia is released can be obtained. Supply of oxygen to the insulating layer 114 can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108. With the insulating layer 114 from which a large amount of ammonia is released, the amount of nitrogen oxide contained in the insulating layer 114 is reduced, so that a transistor with a small change in the threshold voltage can be provided.

The pressure in the treatment chamber during the second plasma treatment is preferably higher than or equal to 50 Pa, further preferably higher than or equal to 100 Pa, still further preferably higher than or equal to 150 Pa, yet further preferably higher than or equal to 200 Pa, yet still further preferably higher than or equal to 250 Pa, yet still further preferably higher than or equal to 300 Pa. With the pressure in the above range, the insulating layer 114 from which a small amount of nitrogen oxide is released and in which the amount of defects is small can be obtained. The description of the first plasma treatment can be referred to for the upper limit of the pressure in the treatment chamber during the second plasma treatment; thus, the detailed description thereof is omitted.

After the insulating layer 114 is formed, the second plasma treatment is preferably performed successively without exposure of the substrate 102 to the air. The second plasma treatment is preferably performed in the deposition apparatus for the insulating layer 114, for example. In that case, the second plasma treatment is preferably performed in the treatment chamber where the insulating layer 114 is formed. Alternatively, a structure may be employed in which the insulating layer 114 is formed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber for the second plasma treatment is performed without exposure to the air and under reduced pressure. In the case where the formation of the insulating layer 114 and the second plasma treatment are successively performed in the same treatment chamber of the same apparatus, the formation of the insulating layer 114 and the second plasma treatment are preferably performed at the same temperature.

A case where the formation of the insulating layer 114 and the second plasma treatment are performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example. Here, the insulating layer 114 is silicon oxynitride.

In the formation of the insulating layer 114, a mixed gas including a deposition gas of monosilane, an oxidizing gas of dinitrogen monoxide (N₂O), and ammonia can be used, and in the second plasma treatment, a mixed gas including ammonia and an oxidizing gas of dinitrogen monoxide (N₂O) can be used. Here, in the formation of the insulating layer 114 and the second plasma treatment, dinitrogen monoxide (N₂O) and ammonia can be used in common. That is, the insulating layer 114 is formed using monosilane, dinitrogen monoxide (N₂O), and ammonia; and then, supply of the monosilane gas is stopped, whereby the second plasma treatment can be performed. Since the formation of the insulating layer 114 and the second plasma treatment can be performed successively in the same treatment chamber in this manner, the productivity can be increased.

Furthermore, the first plasma treatment, the formation of the insulating layer 114, and the second plasma treatment are preferably performed successively without exposure of the substrate 102 to the air. The first plasma treatment and the second plasma treatment are preferably performed in the deposition apparatus for the insulating layer 114, for example. By successively performing the first plasma treatment, the formation of the insulating layer 114, and the second plasma treatment in the same deposition apparatus, the productivity can be increased. In that case, the first plasma treatment and the second plasma treatment are preferably performed in the treatment chamber where the insulating layer 114 is formed. Alternatively, a structure may be employed in which the first plasma treatment is performed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber where the insulating layer 114 is formed is performed without exposure to the air and under reduced pressure. Alternatively, a structure may be employed in which, after the formation of the insulating layer 114, transportation to the treatment chamber for the second plasma treatment is performed without exposure to the air and under reduced pressure. In the case where the first plasma treatment, the formation of the insulating layer 114, and the second plasma treatment are successively performed in the same treatment chamber of the same apparatus, the first plasma treatment, the formation of the insulating layer 114, and the second plasma treatment are preferably performed at the same temperature.

As the mixed gas used for the second plasma treatment, a mixed gas including a rare gas such as argon in addition to the oxidizing gas and the ammonia gas may be used.

The second plasma treatment can inhibit adsorption of water on the surface of the insulating layer 114. In the case where water is adsorbed on the surface of the insulating layer 114, adsorbed water reaches the semiconductor layer 108 and thus V_(o), V_(o)H, and the like might be formed in the semiconductor layer 108. The second plasma treatment performed on the surface of the insulating layer 114 can inhibit adsorption of water on the surface of the insulating layer 114, which enables the transistor to have high reliability. A gas including one or more of an oxidizing gas, an ammonia gas, a nitrogen gas, and an argon gas can be used for the second plasma treatment. In order to inhibit adsorption of impurities such as water on the insulating layer 114, it is particularly suitable to use nitrogen for the second plasma treatment. The formation of the insulating layer 114 and the second plasma treatment are preferably performed successively without exposure to the air.

[Formation of Insulating Layer 116]

Next, the insulating layer 116 is formed to cover the insulating layer 114 (FIG. 14A). The above description in <Fabrication method example 1> can be referred to for the formation of the insulating layer 116; thus, the detailed description thereof is omitted.

After the second plasma treatment is performed, the formation of the insulating layer 116 is preferably performed successively without exposure of the surface of the insulating layer 114 to the air. The second plasma treatment is preferably performed in the deposition apparatus for the insulating layer 116, for example. In that case, the second plasma treatment is preferably performed in the treatment chamber where the insulating layer 116 is formed. Alternatively, a structure may be employed in which the second plasma treatment is performed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber for the insulating layer 116 is performed without exposure to the air and under reduced pressure. In the case where the second plasma treatment and the formation of the insulating layer 116 are successively performed in the same treatment chamber of the same apparatus, the second plasma treatment and the formation of the insulating layer 116 are preferably performed at the same temperature.

A case where the second plasma treatment and the formation of the insulating layer 116 are performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example. Here, the insulating layer 116 is silicon oxynitride.

In the second plasma treatment, a mixed gas including ammonia and an oxidizing gas of dinitrogen monoxide (N₂O) can be used, and in the formation of the insulating layer 116, a mixed gas including a deposition gas of monosilane and an oxidizing gas of dinitrogen monoxide (N₂O) can be used. Here, in the second plasma treatment and the formation of the insulating layer 116, dinitrogen monoxide (N₂O) can be used in common. That is, the second plasma treatment is performed using dinitrogen monoxide (N₂O) and ammonia; and then, supply of the ammonia gas is stopped and the monosilane gas is supplied, whereby the insulating layer 116 can be formed. Since the second plasma treatment and the formation of the insulating layer 116 can be performed successively in the same treatment chamber in this manner, the productivity can be increased.

Furthermore, the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, and the formation of the insulating layer 116 are preferably performed successively without exposure of the substrate 102 to the air. For example, it is preferable that the same deposition apparatus be used for the formation of the insulating layer 114 and the insulating layer 116 and the first plasma treatment and the second plasma treatment be performed in the deposition apparatus for the insulating layer 114 and the insulating layer 116. When the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, and the formation of the insulating layer 116 are performed successively in the same deposition apparatus, impurities at the interface between the semiconductor layer 108 and the insulating layer 114 and the interface between the insulating layer 114 and the insulating layer 116 can be reduced; thus, the interfaces can be favorable. In addition, the productivity can be increased.

In the case where the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, and the formation of the insulating layer 116 are performed successively in the same deposition apparatus, the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, and the formation of the insulating layer 116 are preferably performed in the same treatment chamber. Alternatively, a structure may be employed in which, after the first plasma treatment is performed, transportation to the treatment chamber where the insulating layer 114 is formed is performed without exposure to the air and under reduced pressure. The treatment chamber for performing the first plasma treatment and the treatment chamber where the insulating layer 114 is formed are preferably connected to each other via a gate valve or the like, and a structure may be employed in which, after the insulating layer 114 is formed, transportation to the treatment chamber for the second plasma treatment is performed without exposure to the air and under reduced pressure. Alternatively, a structure may be employed in which, after the second plasma treatment is performed, transportation to the treatment chamber where the insulating layer 116 is formed is performed without exposure to the air and under reduced pressure. In the case where the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, and the formation of the insulating layer 116 are successively performed in the same treatment chamber of the same apparatus, the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, and the formation of the insulating layer 116 are preferably performed at the same temperature.

[Third Plasma Treatment]

Next, the third plasma treatment is performed (FIG. 14B). FIG. 14B schematically illustrates a state in which the surface of the insulating layer 116 is exposed to plasma 134. An oxygen-containing gas is preferably used for the third plasma treatment. The third plasma treatment can be performed in an atmosphere containing an oxidizing gas. As the oxidizing gas, the above-described gas can be used.

With the use of an oxygen-containing gas for the third plasma treatment, oxygen can be supplied to the insulating layer 116. Oxygen supplied to the insulating layer 116 is diffused into the semiconductor layer 108 through the insulating layer 114 by a heat application step to be performed later, and the oxygen can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 (oxygen addition). Note that in the case where heat is applied to the substrate 102 during the third plasma treatment, oxygen supplied to the insulating layer 116 at the time of the third plasma treatment might be diffused into the semiconductor layer 108 through the insulating layer 114 and thus V_(o) and V_(o)H might be reduced.

It is further preferable that a mixed gas including an ammonia gas in addition to an oxidizing gas be used for the third plasma treatment. For example, the third plasma treatment performed using an oxidizing gas might generate nitrogen oxide in the insulating layer 116. Thus, the third plasma treatment performed using a mixed gas including an oxidizing gas and an ammonia gas can inhibit generation of nitrogen oxide in the insulating layer 116. Accordingly, a change in the threshold voltage of the transistor can be inhibited, which can reduce a change in the electrical characteristics of the transistor. Note that in the case where heat is applied to the substrate 102 during the third plasma treatment, nitrogen oxide contained in the insulating layer 116 reacts with ammonia contained in the insulating layer 116 at the time of the third plasma treatment, which might reduce the amount of nitrogen oxide.

The ratio of the flow rates of the oxidizing gas and the ammonia gas in the third plasma treatment can be set in accordance with the amount of oxygen supplied to the insulating layer 116 and the amount of nitrogen oxide generated in the insulating layer 116; the flow rate of the ammonia gas is preferably at least lower than or equal to the flow rate of the oxidizing gas. When the flow rate of the ammonia gas is much lower than the flow rate of the oxidizing gas, the amount of ammonia released from the insulating layer 116 is reduced and the amount of nitrogen oxide in the insulating layer 116 becomes large. By contrast, when the flow rate of the ammonia gas is much higher than the flow rate of the oxidizing gas, the amount of oxygen supplied to the insulating layer 116 is reduced, and an effect of reducing oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 might be poor.

In the third plasma treatment, the flow rate of the ammonia gas is preferably 0.001 times or more and 1 time or less, further preferably 0.002 times or more and 0.5 times or less, still further preferably 0.003 times or more and 0.1 times or less, yet further preferably 0.004 times or more and 0.05 times or less, yet still further preferably 0.005 times or more and 0.02 times or less as high as the flow rate of the oxidizing gas. With the above-described flow rates of the gases, oxygen can be efficiently supplied to the insulating layer 116; thus, the insulating layer 116 from which a large amount of ammonia is released can be obtained. Supply of oxygen to the insulating layer 116 can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108. With the insulating layer 116 from which a large amount of ammonia is released, the amount of nitrogen oxide contained in the insulating layer 116 is reduced, so that a transistor with a small change in the threshold voltage can be provided.

The pressure in the treatment chamber during the third plasma treatment is preferably higher than or equal to 50 Pa, further preferably higher than or equal to 100 Pa, still further preferably higher than or equal to 150 Pa, yet further preferably higher than or equal to 200 Pa, yet still further preferably higher than or equal to 250 Pa, yet still further preferably higher than or equal to 300 Pa. With the pressure in the above range, the insulating layer 116 from which a small amount of nitrogen oxide is released and in which the amount of defects is small can be obtained. The description of the first plasma treatment can be referred to for the upper limit of the pressure in the treatment chamber during the third plasma treatment; thus, the detailed description thereof is omitted.

After the insulating layer 116 is formed, the third plasma treatment is preferably performed successively without exposure of the surface of the insulating layer 116 to the air. The third plasma treatment is preferably performed in the deposition apparatus for the insulating layer 116, for example. In that case, the third plasma treatment is preferably performed in the treatment chamber where the insulating layer 116 is formed. Alternatively, a structure may be employed in which the insulating layer 116 is formed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber for the third plasma treatment is performed without exposure to the air and under reduced pressure. In the case where the formation of the insulating layer 116 and the third plasma treatment are successively performed in the same treatment chamber of the same apparatus, the formation of the insulating layer 116 and the third plasma treatment are preferably performed at the same temperature.

A case where the formation of the insulating layer 116 and the third plasma treatment are performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example. Here, the insulating layer 116 is silicon oxynitride.

In the formation of the insulating layer 116, a mixed gas including a deposition gas of monosilane and an oxidizing gas of dinitrogen monoxide (N₂O) can be used, and in the third plasma treatment, a mixed gas including ammonia and an oxidizing gas of dinitrogen monoxide (N₂O) can be used. Here, in the formation of the insulating layer 116 and the third plasma treatment, dinitrogen monoxide (N₂O) can be used in common. That is, the insulating layer 116 is formed using monosilane and dinitrogen monoxide (N₂O); and then, supply of the monosilane gas is stopped and the ammonia gas is supplied, whereby the third plasma treatment can be performed. Since the formation of the insulating layer 116 and the third plasma treatment can be performed successively in the same treatment chamber in this manner, the productivity can be increased.

Furthermore, the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, the formation of the insulating layer 116, and the third plasma treatment are preferably performed successively without exposure of the substrate 102 to the air. For example, it is preferable that the same deposition apparatus be used for the formation of the insulating layer 114 and the insulating layer 116 and the first plasma treatment, the second plasma treatment, and the third plasma treatment be performed in the deposition apparatus for the insulating layer 114 and the insulating layer 116. When the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, the formation of the insulating layer 116, and the third plasma treatment are performed successively in the same deposition apparatus, the productivity can be increased.

In the case where the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, the formation of the insulating layer 116, and the third plasma treatment are performed successively in the same deposition apparatus, the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, the formation of the insulating layer 116, and the third plasma treatment are preferably performed in the same treatment chamber. Alternatively, a structure may be employed in which the first plasma treatment is performed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber where the insulating layer 114 is formed is performed without exposure to the air and under reduced pressure. Alternatively, a structure may be employed in which, after the insulating layer 114 is formed, transportation to the treatment chamber for the second plasma treatment is performed without exposure to the air and under reduced pressure. Alternatively, a structure may be employed in which, after the second plasma treatment is performed, transportation to the treatment chamber where the insulating layer 116 is formed is performed without exposure to the air and under reduced pressure. Alternatively, a structure may be employed in which, after the insulating layer 116 is formed, transportation to the treatment chamber for the third plasma treatment is performed without exposure to the air and under reduced pressure. In the case where the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, the formation of the insulating layer 116, and the third plasma treatment are successively performed in the same treatment chamber of the same apparatus, the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, the formation of the insulating layer 116, and the third plasma treatment are preferably performed at the same temperature.

As the mixed gas used for the third plasma treatment, a mixed gas including a rare gas such as argon in addition to the oxidizing gas and the ammonia gas may be used.

The third plasma treatment can inhibit adsorption of water on the surface of the insulating layer 116. In the case where water is adsorbed on the surface of the insulating layer 116, adsorbed water reaches the semiconductor layer 108 through the insulating layer 114 and thus V_(o), V_(o)H, and the like might be formed in the semiconductor layer 108. The third plasma treatment performed on the surface of the insulating layer 116 can inhibit adsorption of water on the surface of the insulating layer 116, which enables the transistor to have high reliability. An oxidizing gas, an ammonia gas, a nitrogen gas, an argon gas, and the like can be used for the third plasma treatment. In order to inhibit adsorption of impurities such as water on the insulating layer 116, it is particularly suitable to use nitrogen for the third plasma treatment. The formation of the insulating layer 116 and the third plasma treatment are preferably performed successively without exposure to the air.

After the third plasma treatment, heat treatment may be performed. The heat treatment can remove hydrogen and water contained in the insulating layer 116 and the insulating layer 114. In addition, the heat treatment can reduce defects contained in the insulating layer 116 and the insulating layer 114. Moreover, by the heat treatment, nitrogen oxide contained in the insulating layer 114 and the insulating layer 116 reacts with ammonia contained in the insulating layer 114, so that the amount of nitrogen oxide contained in the insulating layer 114 and the insulating layer 116 is reduced. A reduction in the amount of nitrogen oxide can inhibit a change in the threshold voltage of the transistor, which can reduce a change in the electrical characteristics of the transistor. By the heat treatment, oxygen can be effectively supplied to the semiconductor layer 108 from the insulating layer 114 and the insulating layer 116.

The above description can be referred to for the heat treatment; thus, the detailed description thereof is omitted.

Next, the insulating layer 118 is formed. The above description in <Fabrication method example 1> can be referred to for the steps after the formation of the insulating layer 118; thus, the detailed description thereof is omitted.

Through the above process, the transistor 100A can be fabricated.

Fabrication Method Example 3

A fabrication method of the transistor 100A that is different from the fabrication method in <Fabrication method example 2> shown above will be described. Note that description of the same portions as the above is omitted and different portions will be described.

First, as in <Fabrication method example 2>, the steps up to the third plasma treatment are performed. The description of FIG. 8A to FIG. 10B and FIG. 13A to FIG. 14B can be referred to for the steps up to the third plasma treatment; thus, the detailed description thereof is omitted.

After the third plasma treatment, heat treatment may be performed. The above description can be referred to for the heat treatment; thus, the detailed description thereof is omitted.

[Fourth Plasma Treatment]

Next, fourth plasma treatment is performed (FIG. 15). FIG. 15 schematically illustrates a state in which the surface of the insulating layer 116 is exposed to plasma 136. An oxygen-containing gas is preferably used for the fourth plasma treatment. The fourth plasma treatment can be performed in an atmosphere containing an oxidizing gas. As the oxidizing gas, the above-described gas can be used.

With the use of an oxygen-containing gas for the fourth plasma treatment, oxygen can be supplied to the insulating layer 116. Oxygen supplied to the insulating layer 116 is diffused into the semiconductor layer 108 through the insulating layer 114 by a heat application step to be performed later, and the oxygen can reduce oxygen vacancies (V_(o)) and V_(o)H in the semiconductor layer 108 (oxygen addition). Note that in the case where heat is applied to the substrate 102 during the fourth plasma treatment, oxygen supplied to the insulating layer 116 at the time of the fourth plasma treatment might be diffused into the semiconductor layer 108 through the insulating layer 114 and thus oxygen vacancies (V_(o)) and V_(o)H might be reduced.

The above description of the third plasma treatment can be referred to for the fourth plasma treatment; thus, the detailed description thereof is omitted.

Next, the insulating layer 118 is formed. The above description can be referred to for the steps after the formation of the insulating layer 118; thus, the detailed description thereof is omitted.

After the fourth plasma treatment is performed, the formation of the insulating layer 118 is preferably performed successively without exposure of the surface of the insulating layer 116 to the air. The fourth plasma treatment is preferably performed in the deposition apparatus for the insulating layer 118, for example. In that case, the fourth plasma treatment is preferably performed in the treatment chamber where the insulating layer 118 is formed. Alternatively, a structure may be employed in which the fourth plasma treatment is performed in a treatment chamber connected to the above treatment chamber via a gate valve or the like and then transportation to the treatment chamber where the insulating layer 118 is formed is performed without exposure to the air and under reduced pressure. In the case where the fourth plasma treatment and the formation of the insulating layer 118 are successively performed in the same treatment chamber of the same apparatus, the fourth plasma treatment and the formation of the insulating layer 118 are preferably performed at the same temperature.

A step of supplying oxygen to the insulating layer 114 or the insulating layer 116 will be described.

One or more of the second plasma treatment and the third plasma treatment described above in addition to the fourth plasma treatment can be used in the step of supplying oxygen to the insulating layer 114 or the insulating layer 116. The second plasma treatment and the third plasma treatment can be performed in succession to the first plasma treatment, the formation of the insulating layer 114, and the formation of the insulating layer 116. That is, the first plasma treatment, the formation of the insulating layer 114, the second plasma treatment, the formation of the insulating layer 116, and the third plasma treatment can be performed successively in this order. Here, a series of steps from the first plasma treatment to the third plasma treatment is referred to as a first group of steps. The fourth plasma treatment and the formation of the insulating layer 118 can be performed successively. That is, the fourth plasma treatment and the formation of the insulating layer 118 can be performed successively in this order. Here, a series of steps from the fourth plasma treatment to the formation of the insulating layer 118 is referred to as a second group of steps.

The first group of steps has a larger number of steps than the second group of steps and thus takes a longer treatment time in some cases. Lengthening the treatment time of the second plasma treatment and the third plasma treatment can increase the amount of oxygen to be supplied to the insulating layer 114 or the insulating layer 116 but makes the treatment time of the first group of steps longer.

In one embodiment of the present invention, even when the treatment time of the second plasma treatment and the third plasma treatment is shortened, the amount of oxygen to be supplied to the insulating layer 114 or the insulating layer 116 can be ensured owing to the fourth plasma treatment. In addition, shortening the treatment time of the second plasma treatment and the third plasma treatment can shorten the treatment time of the first group of steps.

In the case where the fourth plasma treatment is not performed, the second group of steps includes only the formation of the insulating layer 118; in the case where the fourth plasma treatment is performed, the treatment time of the second group of steps becomes longer. However, when the fourth plasma treatment is performed and the treatment time of the second plasma treatment and the third plasma treatment is shortened, a difference in the treatment time between the first group of steps and the second group of steps can be reduced, that is, the treatment times of the groups of steps can be level with each other. Thus, using the fabrication method of one embodiment of the present invention can increase the productivity.

Although the example in which the first plasma treatment, the second plasma treatment, and the third plasma treatment are performed in the first group of steps is described, one embodiment of the present invention is not limited thereto. One or more of the first plasma treatment, the second plasma treatment, and the third plasma treatment may be omitted in the first group of steps. Alternatively, all of the first plasma treatment, the second plasma treatment, and the third plasma treatment may be omitted in the first group of steps.

A case where the fourth plasma treatment and the formation of the insulating layer 118 are performed using a plasma-enhanced chemical vapor deposition apparatus will be described as an example. Here, the insulating layer 118 is silicon nitride.

In the fourth plasma treatment, a mixed gas including ammonia and an oxidizing gas of dinitrogen monoxide (N₂O) can be used, and in the formation of the insulating layer 118, a mixed gas including a deposition gas of monosilane, nitrogen, and ammonia can be used. Here, in the fourth plasma treatment and the formation of the insulating layer 118, ammonia can be used in common. That is, the fourth plasma treatment is performed using dinitrogen monoxide (N₂O) and ammonia; and then, supply of dinitrogen monoxide (N₂O) is stopped and monosilane and nitrogen are supplied, whereby the insulating layer 118 can be formed. Since the fourth plasma treatment and the formation of the insulating layer 118 can be performed successively in the same treatment chamber in this manner, the productivity can be increased.

As the mixed gas used for the fourth plasma treatment, a mixed gas including a rare gas such as argon in addition to the oxidizing gas and the ammonia gas may be used.

Through the above process, the transistor 100A can be fabricated.

Fabrication Method Example 4

A fabrication method of the transistor 100A that is different from the fabrication method in <Fabrication method example 1> shown above will be described. Note that description of the same portions as the above is omitted and different portions will be described.

First, as in <Fabrication method example 1>, the steps up to the formation of the insulating layer 116 are performed. The description of FIG. 8A to FIG. 11A can be referred to for the steps up to the formation of the insulating layer 116; thus, the detailed description thereof is omitted. After the formation of the insulating layer 116, heat treatment is preferably performed. The above description in <Fabrication method example 1> can be referred to for the heat treatment; thus, the detailed description thereof is omitted.

Next, a metal oxide layer 150 is formed to cover the insulating layer 116 (FIG. 16A).

The metal oxide layer 150 is formed using a material that does not easily transmit oxygen and hydrogen. The metal oxide layer 150 has a function of inhibiting diffusion of oxygen contained in the insulating layer 114 and the insulating layer 116 to the side opposite to the semiconductor layer 108. In addition, the metal oxide layer 150 has a function of inhibiting diffusion of hydrogen and water from the outside to the side of the insulating layer 114 and the insulating layer 116. The metal oxide layer 150 is preferably formed using a material that is less likely to transmit oxygen and hydrogen than at least the insulating layer 114 and the insulating layer 116.

The metal oxide layer 150 may be an insulating layer or a conductive layer.

The metal oxide layer 150 is preferably formed using an insulating material with a higher dielectric constant than silicon oxide. For example, an aluminum oxide film, a hafnium oxide film, a hafnium aluminate film, or the like can be used.

For the metal oxide layer 150, for example, a conductive oxide such as indium oxide, indium tin oxide (ITO), or indium tin oxide containing silicon (ITSO) can also be used.

For the metal oxide layer 150, an oxide material containing one or more elements that are the same as those of the semiconductor layer 108 is preferably used. It is particularly preferable to use an oxide semiconductor material that can be used for the semiconductor layer 108. In a sputtering target used for forming the metal oxide layer 150, the atomic proportion of In is preferably greater than or equal to the atomic proportion of the element M. Examples of the atomic ratio of the metal elements in such a sputtering target include In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:3, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, In:M:Zn=6:1:6, and In:M:Zn=5:2:5.

In particular, an In—Ga—Zn oxide (IGZO) where the element M is Ga can be suitably used as the metal oxide layer 150.

A metal oxide film formed using a sputtering target having the same composition as the semiconductor layer 108 can be used as the metal oxide layer 150. The sputtering target having the same composition as the semiconductor layer 108 is preferably used, in which case the same manufacturing apparatus and the same sputtering target can be used.

When a metal oxide material containing indium and gallium is used for both the semiconductor layer 108 and the metal oxide layer 150, a material whose composition (content ratio) of gallium is higher than that in the semiconductor layer 108 can be used for the metal oxide layer 150. It is preferable to use a material whose composition (content ratio) of gallium is high for the metal oxide layer 150, in which case an oxygen blocking property can be further increased. In that case, the use of a material whose composition of indium is higher than that in the metal oxide layer 150 for the semiconductor layer 108 enables the field-effect mobility of the transistor 100 to be increased.

The metal oxide layer 150 is preferably formed using a sputtering apparatus. For example, in the case where an oxide film is formed using a sputtering apparatus, forming the oxide film in an atmosphere containing an oxygen gas can suitably supply oxygen into the insulating layer 116, the insulating layer 114, or the semiconductor layer 108.

The metal oxide layer 150 is preferably formed in, for example, an oxygen-containing atmosphere. It is particularly preferable to form the metal oxide layer 150 by a sputtering method in an oxygen-containing atmosphere. Thus, oxygen can be supplied to the insulating layer 116, the insulating layer 114, or the semiconductor layer 108 at the time of forming the metal oxide layer 150.

In the case where the metal oxide layer 150 is formed by a sputtering method using an oxide target containing a metal oxide similar to that in the case of the semiconductor layer 108, reference can be made to the above description.

For example, the metal oxide layer 150 may be formed by a reactive sputtering method using oxygen as a deposition gas and a metal target. When aluminum is used for the metal target, for instance, an aluminum oxide film can be formed.

At the time of forming the metal oxide layer 150, the amount of oxygen supplied into the insulating layer 116 can be increased with a higher proportion of the oxygen flow rate to the total flow rate of the deposition gas introduced into a treatment chamber of a deposition apparatus (a higher oxygen flow rate ratio) or with a higher oxygen partial pressure in the treatment chamber. The oxygen flow rate ratio or the oxygen partial pressure is, for example, higher than or equal to 50% and lower than or equal to 100%, preferably higher than or equal to 65% and lower than or equal to 100%, further preferably higher than or equal to 80% and lower than or equal to 100%, still further preferably higher than or equal to 90% and lower than or equal to 100%. It is particularly preferred that the oxygen flow rate ratio be 100% and the oxygen partial pressure be as close to 100% as possible.

When the metal oxide layer 150 is formed by a sputtering method in an oxygen-containing atmosphere in the above manner, oxygen can be supplied to the insulating layer 116 and release of oxygen from the insulating layer 116 can be prevented during the formation of the metal oxide layer 150. As a result, an extremely large amount of oxygen can be enclosed in the insulating layer 116. Moreover, a large amount of oxygen can be supplied to the semiconductor layer 108 by heat treatment performed later. Thus, the oxygen vacancies in the semiconductor layer 108 can be reduced, leading to a highly reliable transistor.

Next, heat treatment is preferably performed to supply oxygen from the insulating layer 116 to the semiconductor layer 108. The heat treatment can be performed at a temperature higher than or equal to 200° C. and lower than or equal to 400° C. in an atmosphere containing one or more of nitrogen, oxygen, and a rare gas.

By the heat treatment performed after the formation of the metal oxide layer 150, oxygen can be effectively supplied from the metal oxide layer 150 to the semiconductor layer 108.

Next, the metal oxide layer 150 is removed (FIG. 16B). Note that the steps after removal of the metal oxide layer 150 are each preferably performed at a temperature lower than or equal to the temperature of the above heat treatment. In this manner, release of oxygen in the semiconductor layer 108 can be inhibited, which can inhibit formation of oxygen vacancies in the semiconductor layer 108. As a result, the reliability of the transistor can be increased.

There is no particular limitation on a method for removing the metal oxide layer 150, and wet etching can be suitably used. With the use of wet etching, the insulating layer 116 can be inhibited from being etched at the same time as the metal oxide layer 150. This can inhibit a reduction in the thickness of the insulating layer 116 and the thickness of the insulating layer 116 can be uniform.

Next, the insulating layer 118 is formed. The above description in <Fabrication method example 1> can be referred to for the steps after the formation of the insulating layer 118; thus, the detailed description thereof is omitted.

Through the above process, the transistor 100A can be fabricated.

Fabrication Method Example 5

A method for fabricating the transistor 100B described above in Structural example 2-3 will be described below. Note that description of the same portions as the above is omitted and different portions will be described.

First, as in <Fabrication method example 1>, the steps up to the formation of the resist mask 140 are performed. The description of FIG. 8A to FIG. 9A can be referred to for the steps up to the formation of the resist mask 140; thus, the detailed description thereof is omitted.

Then, the conductive film 113 cf, the conductive film 113 bf, and the conductive film 113 af are etched using the resist mask 140 as a mask. At the time of the etching, the insulating layer 106 b in a region overlapping with neither the resist mask 140 nor the semiconductor layer 108 is also removed (FIG. 17A).

Next, the first cleaning treatment is preferably performed. The above description in <Fabrication method example 1> can be referred to for the steps after the first cleaning treatment; thus, the detailed description thereof is omitted.

Through the above process, the transistor 100B can be fabricated (FIG. 17B).

Fabrication Method Example 6

A method for fabricating the transistor 100C described above in Structural example 2-4 will be described below. Note that description of the same portions as the above is omitted and different portions will be described.

First, as in <Fabrication method example 1>, the steps up to the formation of the metal oxide film 108 af and the metal oxide film 108 bf are performed. The description of FIG. 8A and FIG. 8B can be referred to for the steps up to the formation of the metal oxide film 108 af and the metal oxide film 108 bf; thus, the detailed description thereof is omitted.

Next, after the formation of the metal oxide film 108 af and the metal oxide film 108 bf, a resist mask is formed over the metal oxide film 108 bf, and the metal oxide film 108 af and the metal oxide film 108 bf are etched using the resist mask as a mask, whereby the semiconductor layer 108 is formed. At the time of the etching, the insulating layer 106 b in a region not overlapping with the resist mask is also removed (FIG. 18A). After that, the resist mask is removed.

Heat treatment may be performed after the metal oxide film 108 af and the metal oxide film 108 bf are formed or processed into the semiconductor layer 108. The above description in <Fabrication method example 1> can be referred to for the steps after the heat treatment; thus, the detailed description thereof is omitted.

Through the above process, the transistor 100C can be fabricated (FIG. 18B).

According to the fabrication method of a transistor described here, a change in the threshold voltage of the transistor can be inhibited with the use of a film from which a large amount of ammonia is released and a small amount of nitrogen oxide is released as the insulating layer 114 in contact with the semiconductor layer 108, which enables the transistor with favorable electrical characteristics and high reliability to be fabricated.

The above is the description of the fabrication method examples of the transistor.

Modification Example of Structure Example

Modification examples of the structure example of the transistor described above will be described below.

Modification Example 1

A transistor 100D illustrated in FIG. 19A and FIG. 19B is different from the transistor 100 described in Structure example 2-1 above mainly in that each of the conductive layer 112 a and the conductive layer 112 b does not have a stacked-layer structure but has a single-layer structure.

With the conductive layer 112 a and the conductive layer 112 b each having a single-layer structure, the fabrication process can be simplified and the productivity can be increased. For the conductive layer 112 a and the conductive layer 112 b, a conductive material containing copper, silver, gold, or aluminum is preferably used.

Modification Example 2

A transistor 100E illustrated in FIG. 19C and FIG. 19D is different from the transistor 100 described in Structure example 2-1 above mainly in that the semiconductor layer 108 as well as the conductive layer 112 a and the conductive layer 112 b does not have a stacked-layer structure but has a single-layer structure.

When the conductive layer 112 a, the conductive layer 112 b, and the semiconductor layer 108 each have a single-layer structure, the productivity can be further increased. In that case, it is preferable to use a metal oxide film having crystallinity as the semiconductor layer 108.

Modification Example 3

A transistor 100F illustrated in FIG. 20A, FIG. 20B, and FIG. 20C is different from the transistor 100A described in Structure example 2-2 above mainly in the positions of the conductive layer 120 a and the conductive layer 120 b.

The conductive layer 120 a and the conductive layer 120 b are positioned between the insulating layer 116 and the insulating layer 118. The conductive layer 120 b is electrically connected to the conductive layer 112 b through the opening 142 a provided in the insulating layer 114 and the insulating layer 116.

With such a structure, the distance between the conductive layer 120 a and the semiconductor layer 108 can be shortened, and thus the electrical characteristics of the transistor 100F can be improved.

Modification Example 4

A transistor 100G illustrated in FIG. 21A, FIG. 21B, and FIG. 21C is different from the transistor 100 described in Structure example 2-1 above mainly in the structure of the insulating layer 114.

The insulating layer 114 is processed into an island shape that covers a channel formation region of the semiconductor layer 108. Furthermore, the end portions of the conductive layer 112 a and the conductive layer 112 b, which are positioned over the semiconductor layer 108, are positioned over the insulating layer 114. Thus, the insulating layer 114 functions as what is called a channel protective layer, and can protect the back channel side of the semiconductor layer 108 when the conductive layer 112 a and the conductive layer 112 b are etched.

In this case, by performing plasma treatment by the above-described method after the conductive layer 112 a and the conductive layer 112 b are etched, oxygen can be supplied into the insulating layer 114 and the semiconductor layer 108 through the insulating layer 114 while oxidation of the conductive layer 112 a and the conductive layer 112 b is inhibited. In addition, oxygen in the insulating layer 114 may be supplied to the semiconductor layer 108 by performing heat treatment after the plasma treatment.

Modification Example 5

A transistor 100H illustrated in FIG. 22A, FIG. 22B, and FIG. 22C is different from the transistor 100G described in Modification example 4 above mainly in the structure of the insulating layer 114.

The insulating layer 114 is provided to cover the semiconductor layer 108, the insulating layer 106, and the like. In addition, in the insulating layer 114, an opening 142 c is provided in a portion where the semiconductor layer 108 is connected to the conductive layer 112 a or the conductive layer 112 b.

With such a structure, a smaller transistor than that where the insulating layer 114 is processed into an island shape can be provided.

According to the fabrication method of one embodiment of the present invention, a change in the threshold voltage of the transistor can be inhibited with the use of a film from which a large amount of ammonia is released and a small amount of nitrogen oxide is released as the insulating layer 114 in contact with the semiconductor layer 108, which enables the transistor with favorable electrical characteristics and high reliability to be fabricated.

The above is the description of the modification examples.

Application Example

An example of the case where the above-described transistor is used for pixels of a display device will be described below.

Each diagram in FIG. 23 is a schematic top view illustrating a portion of subpixels of the display device. One subpixel includes at least one transistor and a conductive layer (here, the conductive layer 120 b) functioning as a pixel electrode. Note that a structure example of a portion of subpixels is shown here in order to simplify the description; however, another transistor, a capacitor, or the like can be provided as appropriate depending on the kind of display elements used in the subpixels, the function to be added to the pixels, and the like.

In FIG. 23A, a portion of the conductive layer 104 functions as a gate line (also referred to as a scan line), a portion of the conductive layer 112 a functions as a source line (also referred to as a video signal line), and a portion of the conductive layer 112 b functions as a wiring that electrically connects the transistor and the conductive layer 120 b.

In FIG. 23A, the conductive layer 104 has a top-view shape with a sticking-out portion, and the semiconductor layer 108 is provided over this sticking-out portion to constitute a transistor.

FIG. 23B and FIG. 23C each show an example in which the conductive layer 104 does not have the sticking-out portion. FIG. 23B is an example in which the channel length direction of the semiconductor layer 108 is parallel to the extending direction of the conductive layer 104, and FIG. 23C is an example in which these directions are orthogonal.

In FIG. 23D and FIG. 23E, the conductive layer 112 b has a U-shaped top-view shape with an arc-like or substantially arc-like portion. In addition, the conductive layer 112 a and the conductive layer 112 b are placed such that the distance between the two is constant over the semiconductor layer 108. With such a structure, the transistor can have a larger channel width and make a larger amount of current flow.

Note that the transistor of one embodiment of the present invention can be used not only in a display device but also in a variety of circuits and devices. For example, the transistor of one embodiment of the present invention can be suitably used in various circuits in an IC chip mounted on an electronic device or the like, such as an arithmetic circuit, a memory circuit, a driver circuit, and an interface circuit; or driver circuits for a display device in which a liquid crystal element, an organic EL element, or the like is used or for various sensor devices such as a touch sensor, an optical sensor, and a biosensor.

The above is the description of the application example.

<Components of Semiconductor Device>

Components included in the semiconductor device of this embodiment will be described below in detail.

[Substrate]

Although there is no particular limitation on a material and the like of the substrate 102, it is necessary that the substrate have heat resistance high enough to withstand at least heat treatment performed later. For example, a single crystal semiconductor substrate or a polycrystalline semiconductor substrate using silicon or silicon carbide as a material, a compound semiconductor substrate of silicon germanium or the like, an SOI substrate, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, or the like may be used as the substrate 102. Alternatively, any of these substrates over which a semiconductor element is provided may be used as the substrate 102.

A flexible substrate may be used as the substrate 102, and the transistor 100 and the like may be formed directly on the flexible substrate. Alternatively, a separation layer may be provided between the substrate 102 and the transistor 100 and the like. The separation layer can be used when part or the whole of a semiconductor device completed thereover is separated from the substrate 102 and transferred onto another substrate. In that case, the transistor 100 and the like can be transferred onto a substrate having low heat resistance or a flexible substrate as well.

[Insulating Layer 106]

The insulating layer 106 can be formed of a single layer or a stacked layer of an oxide insulating film or a nitride insulating film, for example. To improve the properties of the interface with the semiconductor layer 108, at least a region in the insulating layer 106 that is in contact with the semiconductor layer 108 is preferably formed of an oxide insulating film. Moreover, a film from which oxygen is released by heating is preferably used as the insulating layer 106.

For example, a single layer or a stacked layer using silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, a Ga—Zn oxide, or the like can be provided as the insulating layer 106.

In the case where a film other than an oxide film, such as a silicon nitride film, is used for the side of the insulating layer 106 that is in contact with the semiconductor layer 108, pretreatment such as oxygen plasma treatment is preferably performed on a surface in contact with the semiconductor layer 108 to oxidize the surface or the vicinity of the surface.

[Conductive Film]

Conductive films that constitute the semiconductor device, such as the conductive layer 104 and the conductive layer 120 a that function as gate electrodes, 120 b that functions as a wiring, the conductive layer 112 a that functions as one of a source electrode and a drain electrode, and the conductive layer 112 b that functions as the other of the source electrode and the drain electrode can each be formed using a metal element selected from chromium, copper, aluminum, gold, silver, zinc, molybdenum, tantalum, titanium, tungsten, manganese, nickel, iron, and cobalt; an alloy containing any of these metal elements as its component; an alloy including a combination of any of these metal elements; or the like.

For the conductive layer 112 a that functions as one of the source electrode and the drain electrode and the conductive layer 112 b that functions as the other of the source electrode and the drain electrode, in particular, a low-resistance conductive material containing copper, silver, gold, aluminum, or the like is preferably used. Copper or aluminum is particularly preferable because of its high mass-productivity.

For the conductive films that constitute the semiconductor device, an oxide conductor or a metal oxide film such as an In—Sn oxide, an In—W oxide, an In—W—Zn oxide, an In—Ti oxide, an In—Ti—Sn oxide, an In—Zn oxide, an In—Sn—Si oxide, or an In—Ga—Zn oxide can also be used.

Here, an oxide conductor (OC) is described. For example, when oxygen vacancies are formed in a metal oxide having semiconductor characteristics and hydrogen is added to the oxygen vacancies, a donor level is formed in the vicinity of the conduction band. As a result, the conductivity of the metal oxide is increased, so that the metal oxide becomes a conductor. The metal oxide having become a conductor can be referred to as an oxide conductor.

The conductive films that constitute the semiconductor device may each have a stacked-layer structure of a conductive film containing the above-described oxide conductor (metal oxide) and a conductive film containing a metal or an alloy. The use of the conductive film containing a metal or an alloy can reduce the wiring resistance. At this time, a conductive film containing an oxide conductor is preferably used as the conductive film on the side in contact with the insulating layer functioning as a gate insulating layer.

A Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be used for the conductive layer 104, the conductive layer 112 a, and the conductive layer 112 b. The use of a Cu—X alloy film enables the manufacturing cost to be reduced because wet etching process can be used in the processing.

[Insulating Layer 114 and Insulating Layer 116]

As the insulating layer 114 provided over the semiconductor layer 108, insulating layers containing one or more kinds of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, and the like formed by a PECVD method, a sputtering method, an ALD method, or the like can be used. It is particularly preferable to use a silicon oxide film or a silicon oxynitride film formed by a plasma CVD method. Note that the insulating layer 114 may have a stacked-layer structure of two or more layers.

As the insulating layer 116 functioning as a protective layer, an insulating layer containing one or more kinds of a silicon nitride oxide film, a silicon nitride film, an aluminum nitride film, an aluminum nitride oxide film, and the like formed by a PECVD method, a sputtering method, an ALD method, or the like can be used. Note that the insulating layer 116 may have a stacked-layer structure of two or more layers.

[Semiconductor Layer 108]

In the case where the semiconductor layer 108 is an In-M-Zn oxide, a sputtering target used for forming the In-M-Zn oxide preferably has the atomic proportion of In higher than or equal to the atomic proportion of the element M. Examples of the atomic ratio of the metal elements in such a sputtering target include In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:3, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, In:M:Zn=6:1:6, and In:M:Zn=5:2:5.

In particular, an In—Ga—Zn oxide (IGZO) where the element M is Ga can be suitably used as the semiconductor layer 108.

A target containing a polycrystalline oxide is preferably used as the sputtering target, which facilitates formation of the semiconductor layer 108 having crystallinity. Note that the atomic ratio in the semiconductor layer 108 to be formed may vary in the range of ±40% from any of the above atomic ratios of the metal elements contained in the sputtering target. For example, in the case where the composition (atomic ratio) of a sputtering target used for the semiconductor layer 108 is In:Ga:Zn=4:2:4.1, the composition (atomic ratio) of the formed semiconductor layer 108 is sometimes In:Ga:Zn=4:2:3 or in the neighborhood thereof.

Note that when the atomic ratio is described as In:Ga:Zn=4:2:3 or in the neighborhood thereof, the case is included where Ga is greater than or equal to 1 and less than or equal to 3 and Zn is greater than or equal to 2 and less than or equal to 4 with In being 4. When the atomic ratio is described as In:Ga:Zn=5:1:6 or in the neighborhood thereof, the case is included where Ga is greater than 0.1 and less than or equal to 2 and Zn is greater than or equal to 5 and less than or equal to 7 with In being 5. When the atomic ratio is described as In:Ga:Zn=1:1:1 or in the neighborhood thereof, the case is included where Ga is greater than 0.1 and less than or equal to 2 and Zn is greater than 0.1 and less than or equal to 2 with In being 1.

The energy gap of the semiconductor layer 108 is 2 eV or more, preferably 2.5 eV or more. With the use of such a metal oxide having a wider energy gap than silicon, the off-state current of the transistor can be reduced.

The semiconductor layer 108 preferably has a non-single-crystal structure. The non-single-crystal structure includes, for example, a CAAC structure which will be described later, a polycrystalline structure, a microcrystalline structure, and an amorphous structure. Among the non-single-crystal structures, the amorphous structure has the highest density of defect states, whereas the CAAC structure has the lowest density of defect states.

A CAAC (c-axis aligned crystal) will be described below. A CAAC refers to an example of a crystal structure.

The CAAC structure is a crystal structure of a thin film or the like that has a plurality of nanocrystals (crystal regions having a maximum diameter of less than 10 nm), characterized in that the nanocrystals have c-axis alignment in a particular direction and are not aligned but continuously connected in the a-axis and b-axis directions without forming a grain boundary. In particular, a thin film having the CAAC structure is characterized in that the c-axes of nanocrystals are likely to be aligned in the film thickness direction, the normal direction of the surface where the thin film is formed, or the normal direction of the surface of the thin film.

A CAAC-OS (Oxide Semiconductor) is an oxide semiconductor with high crystallinity. Meanwhile, a clear crystal grain boundary cannot be observed in the CAAC-OS; thus, it can be said that a reduction in electron mobility due to the crystal grain boundary is less likely to occur. Moreover, since the crystallinity of an oxide semiconductor might be decreased by entry of impurities, formation of defects, or the like, the CAAC-OS can be regarded as an oxide semiconductor that has small amounts of impurities and defects (oxygen vacancies or the like). Thus, an oxide semiconductor including a CAAC-OS is physically stable. Therefore, the oxide semiconductor including a CAAC-OS is resistant to heat and has high reliability.

Here, in crystallography, in a unit cell formed with three axes (crystal axes) of the a-axis, the b-axis, and the c-axis, a specific axis is generally taken as the c-axis in the unit cell. In particular, in the case of a crystal having a layered structure, two axes parallel to the plane direction of a layer are regarded as the a-axis and the b-axis and an axis intersecting with the layer is regarded as the c-axis in general. A typical example of such a crystal having a layered structure is graphite, which is classified as a hexagonal system. In a unit cell of graphite, the a-axis and the b-axis are parallel to the cleavage plane and the c-axis is orthogonal to the cleavage plane. For example, an InGaZnO₄ crystal having a YbFe₂O₄ type crystal structure which is a layered structure can be classified as a hexagonal system, and in a unit cell thereof, the a-axis and the b-axis are parallel to the plane direction of the layer and the c-axis is orthogonal to the layer (i.e., the a-axis and the b-axis).

An example of a crystal structure of a metal oxide is described. Note that a metal oxide formed by a sputtering method using an In—Ga—Zn oxide target (In:Ga:Zn=4:2:4.1<atomic ratio>) is described here as an example. A metal oxide that is formed by a sputtering method using the above target at a substrate temperature higher than or equal to 100° C. and lower than or equal to 130° C. is likely to have either the nc (nano crystal) structure or the CAAC structure, or a structure in which both structures are mixed. By contrast, a metal oxide formed by a sputtering method at a substrate temperature set at room temperature (R.T.) is likely to have the nc structure. Note that room temperature (R.T.) here also includes a temperature in the case where a substrate is not heated.

The above is the description of the components.

At least part of this embodiment can be implemented in combination with any of the other embodiments described in this specification as appropriate.

Embodiment 2

In this embodiment, an example of a display device that includes the transistor exemplified in the above embodiment will be described.

Structure Example

FIG. 24A is a top view of a display device 700. The display device 700 includes a first substrate 701 and a second substrate 705 that are attached to each other with a sealant 712. In a region sealed with the first substrate 701, the second substrate 705, and the sealant 712, a pixel portion 702, a source driver circuit portion 704, and a gate driver circuit portion 706 are provided over the first substrate 701. In the pixel portion 702, a plurality of display elements are provided.

An FPC terminal portion 708 to which an FPC 716 (FPC: Flexible printed circuit) is connected is provided in a portion of the first substrate 701 that does not overlap with the second substrate 705. The pixel portion 702, the source driver circuit portion 704, and the gate driver circuit portion 706 are each supplied with a variety of signals and the like from the FPC 716 through the FPC terminal portion 708 and a signal line 710.

A plurality of gate driver circuit portions 706 may be provided. The gate driver circuit portion 706 and the source driver circuit portion 704 may be formed separately on semiconductor substrates or the like to obtain packaged IC chips. The IC chips can be mounted on the first substrate 701 or the FPC 716.

Any of the transistors that are the semiconductor devices of embodiments of the present invention can be used as transistors included in the pixel portion 702, the source driver circuit portion 704, and the gate driver circuit portion 706.

Examples of the display element provided in the pixel portion 702 include a liquid crystal element and a light-emitting element. As the liquid crystal element, a transmissive liquid crystal element, a reflective liquid crystal element, a transflective liquid crystal element, or the like can be used. As the light-emitting element, a self-luminous light-emitting element such as an LED (Light Emitting Diode), an OLED (Organic LED), a QLED (Quantum-dot LED), or a semiconductor laser can be used. It is also possible to use a MEMS (Micro Electro Mechanical Systems) shutter element, an optical interference type MEMS element, or a display element using a microcapsule method, an electrophoretic method, an electrowetting method, an Electronic Liquid Powder (registered trademark) method, or the like, for instance.

A display device 700A illustrated in FIG. 24B is an example of a display device which includes a flexible resin layer 743 instead of the first substrate 701 and can be used as a flexible display.

In the display device 700A, the pixel portion 702 has not a rectangular shape but a shape with rounded corners. The display device 700A includes a notch portion in which part of the pixel portion 702 and part of the resin layer 743 are cut as illustrated in a region P1 in FIG. 24B. A pair of gate driver circuit portions 706 is provided on the opposite sides with the pixel portion 702 therebetween. The gate driver circuit portions 706 are provided along a curved outline at the corners of the pixel portion 702.

The resin layer 743 has a shape with a sticking-out portion where the FPC terminal portion 708 is provided. Furthermore, part of the resin layer 743 that includes the FPC terminal portion 708 can be bent backward in a region P2 in FIG. 24B. When part of the resin layer 743 is bent backward, the display device 700A can be mounted on an electronic device while the FPC 716 overlaps with the back side of the pixel portion 702; thus, the electronic device can be downsized.

An IC 717 is mounted on the FPC 716 connected to the display device 700A. The IC 717 functions as a source driver circuit, for example. In this case, the source driver circuit portion 704 in the display device 700A can include at least one of a protection circuit, a buffer circuit, a demultiplexer circuit, and the like.

A display device 700B illustrated in FIG. 24C is a display device that can be suitably used for an electronic device with a large screen. For example, the display device 700B can be suitably used for a television device, a monitor device, a personal computer (including a notebook type and a desktop type), a tablet terminal, digital signage, or the like.

The display device 700B includes a plurality of source driver ICs 721 and a pair of gate driver circuit portions 722.

The plurality of source driver ICs 721 are attached to respective FPCs 723. In each of the plurality of FPCs 723, one of terminals is connected to the first substrate 701, and the other terminal is connected to a printed circuit board 724. By bending the FPCs 723, the printed circuit board 724 can be placed on the back side of the pixel portion 702 so that the display device 700B can be mounted on an electronic device; thus, the electronic device can be downsized.

Meanwhile, the gate driver circuit portions 722 are provided over the first substrate 701. Thus, an electronic device with a narrow bezel can be provided.

With such a structure, a large-size and high-resolution display device can be provided. For example, a display device with a diagonal screen size of 30 inches or more, 40 inches or more, 50 inches or more, or 60 inches or more can be obtained. Furthermore, a display device with extremely high resolution such as 4K2K or 8K4K can be provided.

Cross-Sectional Structure Example

Structures using a liquid crystal element and an EL element as display elements will be described below with reference to FIG. 25 to FIG. 29. Note that FIG. 25 to FIG. 28 are cross-sectional views along the dashed-dotted line Q-R in FIG. 24A. FIG. 29 is a cross-sectional view along the dashed-dotted line S-T illustrated in FIG. 24B. FIG. 25 to FIG. 27 each show a structure using a liquid crystal element as a display element, and FIG. 28 and FIG. 29 each show a structure using an EL element.

[Description of Common Portions in Display Devices]

Display devices in FIG. 25 to FIG. 29 each include a lead wiring portion 711, the pixel portion 702, the source driver circuit portion 704, and the FPC terminal portion 708. The lead wiring portion 711 includes the signal line 710. The pixel portion 702 includes a transistor 750 and a capacitor 790. The source driver circuit portion 704 includes a transistor 752. FIG. 26 illustrates a case where the capacitor 790 is not provided.

As the transistor 750 and the transistor 752, any of the transistors described in Embodiment 1 can be used.

The transistor used in this embodiment includes a highly purified oxide semiconductor film in which formation of oxygen vacancies is suppressed. The transistor can have low off-state current. Accordingly, an electrical signal such as an image signal can be held for a longer period, and the interval between writes of an image signal can be set longer. Thus, the frequency of refresh operation can be reduced, which leads to lower power consumption.

The transistor used in this embodiment can have relatively high field-effect mobility and thus is capable of high-speed operation. For example, with such a transistor capable of high-speed operation used for a display device, a switching transistor in a pixel portion and a driver transistor used in a driver circuit portion can be formed over one substrate. That is, a structure in which a driver circuit formed using a silicon wafer or the like is not used is possible, in which case the number of components of the display device can be reduced. Moreover, the use of the transistor capable of high-speed operation also in the pixel portion can provide a high-quality image.

The capacitor 790 illustrated in FIG. 25, FIG. 28, and FIG. 29 includes a lower electrode formed by processing the same film as the gate electrode of the transistor 750 and an upper electrode formed by processing the same conductive film as the source electrode or the drain electrode. Part of an insulating film functioning as a gate insulating layer of the transistor 750 is provided between the lower electrode and the upper electrode. That is, the capacitor 790 has a stacked-layer structure in which an insulating film functioning as a dielectric film is positioned between a pair of electrodes.

A planarization insulating film 770 is provided over the transistor 750, the transistor 752, and the capacitor 790.

The transistor 750 in the pixel portion 702 and the transistor 752 in the source driver circuit portion 704 may have different structures. For example, a top-gate transistor may be used as one of the transistors 750 and 752, and a bottom-gate transistor may be used as the other. Note that the same can be said for the gate driver circuit portion 706, as the source driver circuit portion 704.

The signal line 710 is formed using the same conductive film as the source electrodes, the drain electrodes, and the like of the transistors 750 and 752. In this case, a low-resistance material such as a material containing a copper element is preferably used because signal delay or the like due to the wiring resistance can be reduced and display on a large screen is possible.

The FPC terminal portion 708 includes a wiring 760 part of which functions as a connection electrode, an anisotropic conductive film 780, and the FPC 716. The wiring 760 is electrically connected to a terminal included in the FPC 716 through the anisotropic conductive film 780. Here, the wiring 760 is formed using the same conductive film as the source electrodes, the drain electrodes, and the like of the transistors 750 and 752.

As the first substrate 701 and the second substrate 705, a glass substrate or a flexible substrate such as a plastic substrate can be used, for example. In the case where a flexible substrate is used as the first substrate 701, an insulating layer having a barrier property against water or hydrogen is preferably provided between the first substrate 701 and the transistor 750, for example.

A light-blocking layer 738, a coloring layer 736, and an insulating layer 734 in contact with these layers are provided on the second substrate 705 side.

[Structure Example of Display Device Using Liquid Crystal Element]

The display device 700 illustrated in FIG. 25 includes a liquid crystal element 775. The liquid crystal element 775 includes a conductive layer 772, a conductive layer 774, and a liquid crystal layer 776 therebetween. The conductive layer 774 is provided on the second substrate 705 side and has a function of a common electrode. The conductive layer 772 is electrically connected to the source electrode or the drain electrode of the transistor 750. The conductive layer 772 is formed over the planarization insulating film 770 and functions as a pixel electrode.

A material that transmits visible light or a material that reflects visible light can be used for the conductive layer 772. As a light-transmitting material, for example, an oxide material containing indium, zinc, tin, or the like is preferably used. As a reflective material, for example, a material containing aluminum, silver, or the like is preferably used.

When a reflective material is used for the conductive layer 772, the display device 700 is a reflective liquid crystal display device. Meanwhile, when a light-transmitting material is used for the conductive layer 772, a transmissive liquid crystal display device is obtained. For a reflective liquid crystal display device, a polarizing plate is provided on the viewer side. By contrast, for a transmissive liquid crystal display device, a pair of polarizing plates is provided such that the liquid crystal element is placed therebetween.

A structure body 778 is provided between the first substrate 701 and the second substrate 705. The structure body 778 is a columnar spacer and is provided to control the distance (cell gap) between the first substrate 701 and the second substrate 705. Note that a spherical spacer may be used as the structure body 778.

The display device 700 in FIG. 26 is an example of employing the liquid crystal element 775 of a horizontal electric field mode (e.g., an FFS mode). The conductive layer 774 functioning as a common electrode is provided over the conductive layer 772 with an insulating layer 773 therebetween. An electric field generated between the conductive layer 772 and the conductive layer 774 can control the alignment state in the liquid crystal layer 776.

In FIG. 26, a storage capacitor can be formed with a stacked-layer structure including the conductive layer 774, the insulating layer 773, and the conductive layer 772. Thus, another capacitor need not be provided, and thus the aperture ratio can be increased.

Although not illustrated in FIG. 25 and FIG. 26, a structure in which an alignment film in contact with the liquid crystal layer 776 is provided may be employed. Furthermore, an optical member (an optical substrate) such as a polarizing member, a retardation member, or an anti-reflection member, and a light source such as a backlight or a sidelight can be provided as appropriate.

For the liquid crystal layer 776, a thermotropic liquid crystal, a low-molecular liquid crystal, a high-molecular liquid crystal, a polymer dispersed liquid crystal (PDLC), a polymer network liquid crystal (PNLC), a ferroelectric liquid crystal, an anti-ferroelectric liquid crystal, or the like can be used. In the case where a horizontal electric field mode is employed, a liquid crystal exhibiting a blue phase for which an alignment film is not used may be used.

The following can be used as a mode of the liquid crystal element: a TN (Twisted Nematic) mode, a VA (Vertical Alignment) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an ASM (Axially Symmetric aligned Micro-cell) mode, an OCB (Optically Compensated Birefringence) mode, an ECB (Electrically Controlled Birefringence) mode, a guest-host mode, or the like.

A scattering liquid crystal employing a polymer dispersed liquid crystal, a polymer network liquid crystal, or the like can be used for the liquid crystal layer 776. At this time, monochrome image display may be performed without the coloring layer 736, or color display may be performed using the coloring layer 736.

As a method for driving the liquid crystal element, a time-division display method (also referred to as a field-sequential driving method) in which color display is performed on the basis of a successive additive color mixing method may be employed. In that case, a structure in which the coloring layer 736 is not provided may be employed. In the case where the time-division display method is employed, advantages such as the aperture ratio of each pixel or the resolution being increased can be obtained because subpixels that emit light of, for example, R (red), G (green), and B (blue), need not be provided.

FIG. 27 illustrates an example of employing the liquid crystal element 775 of a horizontal electric field mode (e.g., an FFS mode), which is different from that in the display device 700 in FIG. 26.

The display device 700 illustrated in FIG. 27 includes the transistor 750, the transistor 752, the liquid crystal element 775, and the like between the first substrate 701 and the second substrate 705. The first substrate 701 and the second substrate 705 are attached to each other with a sealing layer 732.

The liquid crystal element 775 includes a conductive layer 714, the liquid crystal layer 776, and a conductive layer 713. The conductive layer 713 is provided over the first substrate 701. One or more insulating layers are provided over the conductive layer 713, and the conductive layer 714 is provided over the insulating layer(s). Furthermore, the liquid crystal layer 776 is positioned between the conductive layer 714 and the second substrate 705. The conductive layer 713 is electrically connected to a wiring 728 and functions as a common electrode. The conductive layer 714 is electrically connected to the transistor 750 and serves as a pixel electrode. A common potential is applied to the wiring 728.

The conductive layer 714 has a comb-like top surface shape or a top surface shape including a slit. In the liquid crystal element 775, the alignment state of the liquid crystal layer 776 is controlled by an electric field generated between the conductive layer 714 and the conductive layer 713.

The capacitor 790 functioning as a storage capacitor is formed of a stacked-layer structure of the conductive layer 714, the conductive layer 713, and one or more insulating layers sandwiched therebetween. Thus, another capacitor need not be provided, and thus the aperture ratio can be increased.

A material that transmits visible light or a material that reflects visible light can be used for the conductive layer 714 and the conductive layer 713. As a light-transmitting material, for example, an oxide material containing indium, zinc, tin, or the like is preferably used. As a reflective material, for example, a material containing aluminum, silver, or the like is preferably used.

When a reflective material is used for one or both of the conductive layer 714 and the conductive layer 713, the display device 700 is a reflective liquid crystal display device. Meanwhile, when a light-transmitting material is used for both of the conductive layer 714 and the conductive layer 713, the display device 700 is a transmissive liquid crystal display device. For a reflective liquid crystal display device, a polarizing plate is provided on the viewer side. By contrast, for a transmissive liquid crystal display device, a pair of polarizing plates is provided such that the liquid crystal element is placed therebetween.

FIG. 27 illustrates an example of a transmissive liquid crystal display device. A polarizing plate 755 and a light source 757 are provided on the outer side of the first substrate 701, and a polarizing plate 756 is provided on the outer side of the second substrate 705. The light source 757 functions as a backlight.

The light-blocking layer 738 and the coloring layer 736 are provided on a surface of the second substrate 705 that is on the first substrate 701 side. The insulating layer 734 functioning as a planarization layer is provided to cover the light-blocking layer 738 and the coloring layer 736. A spacer 727 is provided on a surface of the insulating layer 734 that is on the first substrate 701 side.

The liquid crystal layer 776 is positioned between an alignment film 725 covering the conductive layer 714 and an alignment film 726 covering the insulating layer 734. Note that the alignment film 725 and the alignment film 726 are not necessarily provided when not needed.

Although not illustrated in FIG. 27, an optical member (optical film) such as a retardation film or an anti-reflection film, a protective film, an antifouling film, or the like can be provided on the outer side of the second substrate 705 as appropriate. Examples of the anti-reflection film include an AG (Anti Glare) film and an AR (Anti Reflection) film.

The display device 700 illustrated in FIG. 27 has a structure in which an organic insulating film functioning as a planarization layer is not provided on a surface on which the conductive layer 714 functioning as a pixel electrode or the conductive layer 713 functioning as a common electrode is formed. Furthermore, bottom-gate transistors, which have a relatively small number of fabrication steps, are used as the transistor 750 and the like included in the display device 700. With such a structure, the manufacturing cost can be reduced and the manufacturing yield can be increased, so that a display device having high reliability can be provided at low cost.

[Structure Example of Display Device Using Light-Emitting Element]

The display device 700 illustrated in FIG. 28 includes a light-emitting element 782. The light-emitting element 782 includes the conductive layer 772, an EL layer 786, and a conductive film 788. The EL layer 786 contains an organic compound or an inorganic compound such as quantum dots.

Examples of materials that can be used for an organic compound include a fluorescent material and a phosphorescent material. Examples of materials that can be used for quantum dots include a colloidal quantum dot material, an alloyed quantum dot material, a core-shell quantum dot material, and a core quantum dot material.

In the display device 700 illustrated in FIG. 28, an insulating film 730 covering part of the conductive layer 772 is provided over the planarization insulating film 770. Here, the light-emitting element 782 is a top-emission light-emitting element, which includes the conductive film 788 with a light-transmitting property. Note that the light-emitting element 782 may have a bottom-emission structure in which light is emitted to the conductive layer 772 side, or a dual-emission structure in which light is emitted to both the conductive layer 772 side and the conductive film 788 side.

The coloring layer 736 is provided in a position overlapping with the light-emitting element 782, and the light-blocking layer 738 is provided in the lead wiring portion 711, the source driver circuit portion 704, and a position overlapping with the insulating film 730. The coloring layer 736 and the light-blocking layer 738 are covered with the insulating layer 734. A space between the light-emitting element 782 and the insulating layer 734 is filled with the sealing layer 732. Note that a structure in which the coloring layer 736 is not provided may be employed when the EL layer 786 is formed into an island shape for each pixel or into a stripe shape for each pixel column, i.e., the EL layer 786 is formed by separate coloring.

FIG. 29 illustrates a structure of a display device suitably applicable to a flexible display. FIG. 29 is a cross-sectional view along the dashed-dotted line S-T in the display device 700A in FIG. 24B.

The display device 700A in FIG. 29 has a structure in which a support substrate 745, a bonding layer 742, the resin layer 743, and an insulating layer 744 are stacked instead of the first substrate 701 in FIG. 28. The transistor 750, the capacitor 790, and the like are provided over the insulating layer 744 over the resin layer 743.

The support substrate 745 includes an organic resin, glass, or the like and is thin enough to have flexibility. The resin layer 743 is a layer containing an organic resin such as polyimide or acrylic. The insulating layer 744 includes an inorganic insulating film such as a silicon oxide film, a silicon oxynitride film, or a silicon nitride film. The resin layer 743 and the support substrate 745 are attached to each other with the bonding layer 742. The resin layer 743 is preferably thinner than the support substrate 745.

The display device 700 in FIG. 29 includes a protective layer 740 instead of the second substrate 705 in FIG. 28. The protective layer 740 is attached to the sealing layer 732. A glass substrate, a resin film, or the like can be used as the protective layer 740. Alternatively, as the protective layer 740, an optical member such as a polarizing plate or a scattering plate, an input device such as a touch sensor panel, or a structure in which two or more of the above are stacked may be employed.

The EL layer 786 included in the light-emitting element 782 is provided in an island shape over the insulating film 730 and the conductive layer 772. The EL layers 786 are formed separately so that respective subpixels emit light of different colors, whereby color display can be performed without use of the coloring layer 736. A protective layer 741 is provided to cover the light-emitting element 782. The protective layer 741 has a function of preventing diffusion of impurities such as water into the light-emitting element 782. The protective layer 741 is preferably formed using an inorganic insulating film. The protective layer 741 further preferably has a stacked-layer structure including one or more inorganic insulating films and one or more organic insulating films.

FIG. 29 illustrates the region P2 that can be bent. The region P2 includes a portion where the support substrate 745, the bonding layer 742, and the inorganic insulating film such as the insulating layer 744 are not provided. In the region P2, a resin layer 746 is provided to cover the wiring 760. When a structure is employed in which an inorganic insulating film is not provided in the region P2 that can be bent and only a conductive layer containing a metal or an alloy and a layer containing an organic material are stacked, generation of cracks caused at bending can be prevented. When the support substrate 745 is not provided in the region P2, part of the display device 700A can be bent with an extremely small radius of curvature.

[Structure Example of Display Device Provided with Input Device]

An input device may be provided in the display device illustrated in FIG. 25 to FIG. 29. Examples of the input device include a touch sensor.

A variety of types such as a capacitive type, a resistive type, a surface acoustic wave type, an infrared type, an optical type, and a pressure-sensitive type can be used as the sensor type, for example. Alternatively, two or more of these types may be combined and used.

Examples of the touch panel structure include what is called an in-cell touch panel in which an input device is provided between a pair of substrates, what is called an on-cell touch panel in which an input device is formed over the display device, and what is called an out-cell touch panel in which an input device is attached to the display device.

At least part of the structure examples, the drawings corresponding thereto, and the like exemplified in this embodiment can be implemented in combination with the other structure examples, the other drawings, and the like as appropriate.

At least part of this embodiment can be implemented in combination with any of the other embodiments described in this specification as appropriate.

Embodiment 3

In this embodiment, a display device that includes the semiconductor device of one embodiment of the present invention will be described with reference to FIG. 30A to FIG. 30C.

A display device illustrated in FIG. 30A includes a pixel portion 502, a driver circuit portion 504, protection circuits 506, and a terminal portion 507. Note that a structure in which the protection circuits 506 are not provided may be employed.

The transistor of one embodiment of the present invention can be used as transistors included in the pixel portion 502 and the driver circuit portion 504. The transistor of one embodiment of the present invention may also be used in the protection circuits 506.

The pixel portion 502 includes a plurality of pixel circuits 501 arranged in X rows and Y columns (X and Y each independently represent a natural number of 2 or more). Each of the pixel circuits 501 includes a circuit for driving a display element.

The driver circuit portion 504 includes driver circuits such as a gate driver 504 a that outputs a scan signal to gate lines GL_1 to GL_X and a source driver 504 b that supplies a data signal to data lines DL_1 to DL_Y. The gate driver 504 a includes at least a shift register. The source driver 504 b is formed using a plurality of analog switches, for example. Alternatively, the source driver 504 b may be formed using a shift register or the like.

The terminal portion 507 refers to a portion provided with terminals for inputting power, control signals, image signals, and the like to the display device from external circuits.

The protection circuit 506 is a circuit that, when a potential out of a certain range is applied to a wiring to which the protection circuit 506 is connected, establishes continuity between the wiring and another wiring. The protection circuit 506 illustrated in FIG. 30A is connected to a variety of wirings such as the gate lines GL_1 to GL_X that are wirings between the gate driver 504 a and the pixel circuits 501 and the data lines DL_1 to DL_Y that are wirings between the source driver 504 b and the pixel circuits 501, for example. Note that the protection circuits 506 are hatched in FIG. 30A to distinguish the protection circuits 506 from the pixel circuits 501.

The gate driver 504 a and the source driver 504 b may be provided over a substrate over which the pixel portion 502 is provided, or a substrate where a gate driver circuit or a source driver circuit is separately formed (e.g., a driver circuit board formed using a single crystal semiconductor film or a polycrystalline semiconductor film) may be mounted on the substrate by COG or TAB (Tape Automated Bonding).

FIG. 30B and FIG. 30C each illustrate a structure example of a pixel circuit that can be used as the pixel circuit 501.

The pixel circuit 501 illustrated in FIG. 30B includes a liquid crystal element 570, a transistor 550, and a capacitor 560. The data line DL_n, the gate line GL_m, a potential supply line VL, and the like are connected to the pixel circuit 501.

The potential of one of a pair of electrodes of the liquid crystal element 570 is set appropriately in accordance with the specifications of the pixel circuit 501. The alignment state of the liquid crystal element 570 is set depending on written data. Note that a common potential may be supplied to one of the pair of electrodes of the liquid crystal element 570 included in each of the plurality of pixel circuits 501. Alternatively, a potential supplied to one of the pair of electrodes of the liquid crystal element 570 of the pixel circuit 501 may differ between rows.

The pixel circuit 501 illustrated in FIG. 30C includes transistors 552 and 554, a capacitor 562, and a light-emitting element 572. The data line DL_n, the gate line GL_m, a potential supply line VL_a, a potential supply line VL_b, and the like are connected to the pixel circuit 501.

Note that a high power supply potential VDD is supplied to one of the potential supply line VL_a and the potential supply line VL_b, and a low power supply potential VSS is supplied to the other. Current flowing through the light-emitting element 572 is controlled in accordance with a potential supplied to a gate of the transistor 554, whereby the luminance of light emitted from the light-emitting element 572 is controlled.

At least part of the structure examples, the drawings corresponding thereto, and the like exemplified in this embodiment can be implemented in combination with the other structure examples, the other drawings, and the like as appropriate.

At least part of this embodiment can be implemented in combination with any of the other embodiments described in this specification as appropriate.

Embodiment 4

A pixel circuit including a memory for correcting gray levels displayed by pixels and a display device including the pixel circuit will be described below. The transistor described in Embodiment 1 can be used as a transistor used in the pixel circuit described below.

<Circuit Structure>

FIG. 31A is a circuit diagram of a pixel circuit 400. The pixel circuit 400 includes a transistor M1, a transistor M2, a capacitor C1, and a circuit 401. A wiring S1, a wiring S2, a wiring G1, and a wiring G2 are connected to the pixel circuit 400.

In the transistor M1, a gate is connected to the wiring G1, one of a source and a drain is connected to the wiring S1, and the other is connected to one electrode of the capacitor C1. In the transistor M2, a gate is connected to the wiring G2, one of a source and a drain is connected to the wiring S2, and the other is connected to the other electrode of the capacitor C1 and the circuit 401.

The circuit 401 is a circuit including at least one display element. Any of a variety of elements can be used as the display element, and typically, a light-emitting element such as an organic EL element or an LED element, a liquid crystal element, a MEMS (Micro Electro Mechanical Systems) element, or the like can be used.

A node connecting the transistor M1 and the capacitor C1 is denoted as a node N1, and a node connecting the transistor M2 and the circuit 401 is denoted as a node N2.

In the pixel circuit 400, the potential of the node N1 can be retained when the transistor M1 is turned off. The potential of the node N2 can be retained when the transistor M2 is turned off. When a predetermined potential is written to the node N1 through the transistor M1 with the transistor M2 being in an off state, the potential of the node N2 can be changed in accordance with displacement of the potential of the node N1 owing to capacitive coupling through the capacitor C1.

Here, the transistor using an oxide semiconductor, which is described in Embodiment 1, can be used as one or both of the transistor M1 and the transistor M2. Accordingly, owing to an extremely low off-state current, the potentials of the node Ni and the node N2 can be retained for a long time. Note that in the case where the period in which the potential of each node is retained is short (specifically, the case where the frame frequency is higher than or equal to 30 Hz, for example), a transistor using a semiconductor such as silicon may be used.

Driving Method Example

Next, an example of a method for operating the pixel circuit 400 is described with reference to FIG. 31B. FIG. 31B is a timing chart of the operation of the pixel circuit 400. Note that for simplification of description, the influence of various kinds of resistance such as wiring resistance, parasitic capacitance of a transistor, a wiring, or the like, the threshold voltage of the transistor, and the like is not taken into account here.

In the operation shown in FIG. 31B, one frame period is divided into a period T1 and a period T2. The period T1 is a period in which a potential is written to the node N2, and the period T2 is a period in which a potential is written to the node N1.

[Period T1]

In the period T1, a potential for turning on the transistor is supplied to both the wiring G1 and the wiring G2. In addition, a potential V_(ref) that is a fixed potential is supplied to the wiring S1, and a first data potential V_(w) is supplied to the wiring S2.

The potential V_(ref) is supplied from the wiring S1 to the node N1 through the transistor M1. The first data potential V_(w) is supplied from the wiring S2 to the node N2 through the transistor M2. Accordingly, a potential difference V_(w)−V_(ref) is retained in the capacitor C1.

[Period T2]

Next, in the period T2, a potential for turning on the transistor M1 is supplied to the wiring G1, and a potential for turning off the transistor M2 is supplied to the wiring G2. A second data potential V_(data) is supplied to the wiring S1. The wiring S2 may be supplied with a predetermined constant potential or brought into a floating state.

The second data potential V_(data) is supplied from the wiring S1 to the node N1 through the transistor M1. At this time, capacitive coupling due to the capacitor C1 changes the potential of the node N2 in accordance with the second data potential V_(data) by a potential dV. That is, a potential that is the sum of the first data potential V_(w) and the potential dV is input to the circuit 401. Note that although the potential dV is shown as a positive value in FIG. 31B, the potential dV may be a negative value. That is, the second data potential V_(data) may be lower than the potential V_(ref).

Here, the potential dV is roughly determined by the capacitance of the capacitor C1 and the capacitance of the circuit 401. When the capacitance of the capacitor C1 is sufficiently larger than the capacitance of the circuit 401, the potential dV is a potential close to the second data potential V_(data).

In the above manner, the pixel circuit 400 can generate a potential to be supplied to the circuit 401 including the display element, by combining two kinds of data signals; hence, a gray level can be corrected in the pixel circuit 400.

The pixel circuit 400 can also generate a potential exceeding the maximum potential that can be supplied to the wiring Si and the wiring S2. For example, in the case where a light-emitting element is used, high-dynamic range (HDR) display or the like can be performed. In the case where a liquid crystal element is used, overdriving or the like can be achieved.

Application Examples [Example Using Liquid Crystal Element]

A pixel circuit 400LC illustrated in FIG. 31C includes a circuit 401LC. The circuit 401LC includes a liquid crystal element LC and a capacitor C2.

In the liquid crystal element LC, one electrode is connected to the node N2 and one electrode of the capacitor C2, and the other electrode is connected to a wiring supplied with a potential V_(com2). The other electrode of the capacitor C2 is connected to a wiring supplied with a potential V_(com1).

The capacitor C2 functions as a storage capacitor. Note that the capacitor C2 can be omitted when not needed.

In the pixel circuit 400LC, a high voltage can be supplied to the liquid crystal element LC; thus, high-speed display can be performed by overdriving or a liquid crystal material with a high driving voltage can be employed, for example. Moreover, by supply of a correction signal to the wiring Si or the wiring S2, a gray level can be corrected in accordance with the operating temperature, the deterioration state of the liquid crystal element LC, or the like.

[Example Using Light-Emitting Element]

A pixel circuit 400EL illustrated in FIG. 31D includes a circuit 401EL. The circuit 401EL includes a light-emitting element EL, a transistor M3, and the capacitor C2.

In the transistor M3, a gate is connected to the node N2 and one electrode of the capacitor C2, one of a source and a drain is connected to a wiring supplied with a potential V_(H), and the other is connected to one electrode of the light-emitting element EL. The other electrode of the capacitor C2 is connected to a wiring supplied with a potential V_(com). The other electrode of the light-emitting element EL is connected to a wiring supplied with a potential V_(L).

The transistor M3 has a function of controlling a current to be supplied to the light-emitting element EL. The capacitor C2 functions as a storage capacitor. The capacitor C2 can be omitted when not needed.

Note that although the structure in which the anode side of the light-emitting element EL is connected to the transistor M3 is described here, the transistor M3 may be connected to the cathode side. In that case, the values of the potential V_(H) and the potential V_(L) can be appropriately changed.

In the pixel circuit 400EL, a large amount of current can flow through the light-emitting element EL when a high potential is applied to the gate of the transistor M3, which enables HDR display, for example. Moreover, a variation in the electrical characteristics of the transistor M3 and the light-emitting element EL can be corrected by supply of a correction signal to the wiring Si or the wiring S2.

Note that the structure is not limited to the circuits illustrated in FIG. 31C and FIG. 31D, and a structure to which a transistor, a capacitor, or the like is further added may be employed.

At least part of this embodiment can be implemented in combination with any of the other embodiments described in this specification as appropriate.

Embodiment 5

In this embodiment, a display module that can be fabricated using one embodiment of the present invention is described.

In a display module 6000 illustrated in FIG. 32A, a display device 6006 to which an FPC 6005 is connected, a frame 6009, a printed circuit board 6010, and a battery 6011 are provided between an upper cover 6001 and a lower cover 6002.

A display device fabricated using one embodiment of the present invention can be used as the display device 6006, for example. With the display device 6006, a display module with extremely low power consumption can be achieved.

The shape and size of the upper cover 6001 and the lower cover 6002 can be changed as appropriate in accordance with the size of the display device 6006.

The display device 6006 may have a function of a touch panel.

The frame 6009 may have a function of protecting the display device 6006, a function of blocking electromagnetic waves generated by the operation of the printed circuit board 6010, a function of a heat dissipation plate, or the like.

The printed circuit board 6010 includes a power supply circuit, a signal processing circuit for outputting a video signal and a clock signal, a battery control circuit, and the like.

FIG. 32B is a schematic cross-sectional view of the display module 6000 having an optical touch sensor.

The display module 6000 includes a light-emitting portion 6015 and a light-receiving portion 6016 that are provided on the printed circuit board 6010. Furthermore, a pair of light guide portions (a light guide portion 6017 a and a light guide portion 6017 b) is provided in a region surrounded by the upper cover 6001 and the lower cover 6002.

The display device 6006 is provided to overlap with the printed circuit board 6010 and the battery 6011 with the frame 6009 therebetween. The display device 6006 and the frame 6009 are fixed to the light guide portion 6017 a and the light guide portion 6017 b.

Light 6018 emitted from the light-emitting portion 6015 travels over the display device 6006 through the light guide portion 6017 a and reaches the light-receiving portion 6016 through the light guide portion 6017 b. For example, blocking of the light 6018 by a sensing target such as a finger or a stylus enables detection of touch operation.

A plurality of light-emitting portions 6015 are provided along two adjacent sides of the display device 6006, for example. A plurality of light-receiving portions 6016 are provided at the positions on the opposite side of the light-emitting portions 6015. Accordingly, information about the position of touch operation can be obtained.

As the light-emitting portion 6015, a light source such as an LED element can be used, for example, and it is particularly preferable to use a light source emitting infrared rays. As the light-receiving portion 6016, a photoelectric element that receives light emitted from the light-emitting portion 6015 and converts it into an electric signal can be used. A photodiode that can receive infrared rays can be suitably used.

With the use of the light guide portion 6017 a and the light guide portion 6017 b which transmit the light 6018, the light-emitting portion 6015 and the light-receiving portion 6016 can be placed under the display device 6006, and a malfunction of the touch sensor due to external light reaching the light-receiving portion 6016 can be inhibited. Particularly when a resin that absorbs visible light and transmits infrared rays is used, a malfunction of the touch sensor can be inhibited more effectively.

At least part of this embodiment can be implemented in combination with any of the other embodiments described in this specification as appropriate.

Embodiment 6

In this embodiment, examples of an electronic device for which the display device of one embodiment of the present invention can be used are described.

An electronic device 6500 illustrated in FIG. 33A is a portable information terminal that can be used as a smartphone.

The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

The display device of one embodiment of the present invention can be used in the display portion 6502.

FIG. 33B is a schematic cross-sectional view including an end portion of the housing 6501 on the microphone 6506 side.

A protective member 6510 having a light-transmitting property is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, and the like are provided in a space surrounded by the housing 6501 and the protective member 6510.

The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 with a bonding layer not illustrated.

Part of the display panel 6511 is bent in a region outside the display portion 6502. An FPC 6515 is connected to the bent part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided for the printed circuit board 6517.

A flexible display panel of one embodiment of the present invention can be used as the display panel 6511. Thus, an extremely lightweight electronic device can be achieved. Furthermore, since the display panel 6511 is extremely thin, the battery 6518 with a high capacity can be provided without an increase in the thickness of the electronic device. Moreover, part of the display panel 6511 is bent to provide a connection portion with the FPC 6515 on the back side of the pixel portion, whereby an electronic device with a narrow bezel can be obtained.

At least part of this embodiment can be implemented in combination with any of the other embodiments described in this specification as appropriate.

Embodiment 7

In this embodiment, electronic devices each including a display device fabricated using one embodiment of the present invention will be described.

Electronic devices exemplified below each include a display device of one embodiment of the present invention in a display portion. Thus, the electronic devices achieve high resolution. In addition, the electronic devices can each achieve both high resolution and a large screen.

A display portion in an electronic device of one embodiment of the present invention can display a video with a resolution of, for example, full high definition, 4K2K, 8K4K, 16K8K, or higher.

Examples of the electronic devices include a digital camera, a digital video camera, a digital photo frame, a cellular phone, a portable game machine, a portable information terminal, and an audio reproducing device, in addition to electronic devices with comparatively large screens, such as a television device, a notebook personal computer, a monitor device, digital signage, a pachinko machine, and a game machine.

An electronic device using one embodiment of the present invention can be incorporated along a flat surface or a curved surface of an inside wall or an outside wall of a house or a building, an interior or an exterior of a car, or the like.

FIG. 34A illustrates an example of a television device. In a television device 7100, a display portion 7500 is incorporated in a housing 7101. Here, a structure in which the housing 7101 is supported by a stand 7103 is illustrated.

Operation of the television device 7100 illustrated in FIG. 34A can be performed with an operation switch provided in the housing 7101 or a separate remote controller 7111. Alternatively, a touch panel may be used for the display portion 7500, and the television device 7100 may be operated by touch on the touch panel. The remote controller 7111 may include a display portion in addition to operation buttons.

Note that the television device 7100 may include a television receiver and a communication device for network connection.

FIG. 34B illustrates a notebook personal computer 7200. The notebook personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The display portion 7500 is incorporated in the housing 7211.

FIG. 34C and FIG. 34D illustrate examples of digital signage.

Digital signage 7300 illustrated in FIG. 34C includes a housing 7301, the display portion 7500, a speaker 7303, and the like. Furthermore, the digital signage can include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, a variety of sensors, a microphone, and the like.

FIG. 34D is digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 includes the display portion 7500 provided along a curved surface of the pillar 7401.

The larger display portion 7500 can increase the amount of information that can be provided at a time and attracts more attention, so that the effectiveness of the advertisement can be increased, for example.

A touch panel is preferably used for the display portion 7500 so that the user can operate the digital signage. Thus, the digital signage can be used not only for advertising but also for providing information that the user needs, such as route information, traffic information, and guidance information on a commercial facility.

As illustrated in FIG. 34C and FIG. 34D, it is preferable that the digital signage 7300 or the digital signage 7400 can work with an information terminal 7311 such as a user's smartphone through wireless communication. For example, information of an advertisement displayed on the display portion 7500 can be displayed on a screen of the information terminal 7311, or display on the display portion 7500 can be switched by operation of the information terminal 7311.

It is possible to make the digital signage 7300 or the digital signage 7400 execute a game with the use of the information terminal 7311 as an operation means (controller). Thus, an unspecified number of users can join in and enjoy the game concurrently.

The display device of one embodiment of the present invention can be used for the display portion 7500 in FIG. 34A to FIG. 34D.

The electronic devices in this embodiment each have a structure including a display portion; however, one embodiment of the present invention can also be applied to an electronic device that does not include a display portion.

At least part of this embodiment can be implemented in combination with any of the other embodiments described in this specification as appropriate.

Example 1

In this example, the amount of ammonia released from an insulating film was evaluated.

In the evaluation, samples (A1 to A10, B1 to B9, and C1 to C8) in each of which a 100-nm-thick insulating film was formed over a glass substrate were used. Silicon oxynitride formed by a plasma CVD method was used for the insulating films, and the formation conditions differed between the samples.

Table 1 and Table 2 show the formation conditions of the insulating films of the samples (Sample). In Table 1 and Table 2, the flow rate of a silane gas is denoted as SiH₄, the flow rate of a dinitrogen monoxide gas is denoted as N₂O, the flow rate of an ammonia gas is denoted as NH₃, the RF power is denoted as Power, and the pressure in a chamber is denoted as Pressure. Here, in the formation of the insulating films in B1 to B9 and C1 to C8 of one embodiment of the present invention, silane, dinitrogen monoxide, and ammonia were used. The RF power and the pressure differed between the samples B1 to B9. The flow rate of the ammonia gas and the RF power differed between the samples C1 to C8. Meanwhile, in the formation of the insulating films in the comparative samples A1 to A10, silane and dinitrogen monoxide were used. The RF power and the pressure differed between the samples A1 to A10. In each of the samples, the substrate temperature at the time of forming the insulating film was set to 200° C.

TABLE 1 Sample SiH₄ N₂O NH₃ Power Pressure A1 50 sccm 2000 sccm — 100 W 100 Pa A2 150 Pa A3 200 Pa A4 200 W 100 Pa A5 150 Pa A6 200 Pa A7 300 W 100 Pa A8 150 Pa A9 200 Pa A10 100 W  20 Pa B1 100 sccm 100 W 100 Pa B2 150 Pa B3 200 Pa B4 200 W 100 Pa B5 150 Pa B6 200 Pa B7 300 W 100 Pa B8 150 Pa B9 200 Pa

TABLE 2 Sample SiH₄ N₂O NH₃ Power Pressure C1 50 sccm 2000 sccm 100 sccm 200 W 100 Pa C2 200 sccm C3 500 sccm C4 1000 sccm  C5 100 sccm 300 W C6 200 sccm C7 500 sccm C8 1000 sccm 

<TDS Analysis>

A released gas from each sample was evaluated using thermal desorption spectrometry (TDS). In the TDS measurement, the substrate temperature was increased from approximately 50° C. to approximately 520° C. at a substrate temperature rising rate of 30° C./min.

FIG. 35 shows the TDS analysis results of the samples A1 to A6 and B1 to B6. FIG. 36 shows the TDS analysis results of the samples A7 to A10 and B7 to B9. FIG. 37 shows the TDS analysis results of the samples C1 to C8. In each of FIG. 35 to FIG. 37, the horizontal axis represents substrate temperature (Tsub), and the vertical axis represents detection intensity (Intensity) of a mass-to-charge ratio of 17 (m/z=17). A gas with a mass-to-charge ratio of 17 (m/z=17) is mainly an ammonia molecule. Note that in each of FIG. 35 to FIG. 37, the detection intensity derived from OH (m/z=17), which is a fragment of H₂O (M/z=18), was removed from the detection intensity of a mass-to-charge ratio of 17 (m/z=17).

FIG. 38A shows the amount of ammonia molecules released from the samples A1 to A10 and B1 to B9. FIG. 38B shows the amount of ammonia molecules released from the samples C1 to C8. In each of FIG. 38A and FIG. 38B, the horizontal axis represents the formation conditions of the insulating films, and the vertical axis represents the released amount of ammonia molecules (NH₃ desorption). Note that in FIG. 38A, the samples A1 to A10 in which ammonia was not used in forming the insulating films are denoted as without NH₃, and the samples B1 to B9 in which ammonia was used in forming the insulating films are denoted as with NH₃. In addition, in FIG. 38A and FIG. 38B, the samples in which the amount of ammonia was less than or equal to the lower detection limit in the TDS analysis are denoted as DL.

FIG. 35, FIG. 36, FIG. 37, FIG. 38A, and FIG. 38B reveal that ammonia is released from the insulating films of the samples B1 to B9 and C1 to C8 of one embodiment of the present invention. It is also found that higher power at the time of forming the insulating film results in a smaller amount of ammonia released from the insulating film. It is found that higher pressure at the time of forming the insulating film results in a smaller amount of ammonia released from the insulating film. Furthermore, as the flow rate of the ammonia gas in the formation of the insulating film is higher, the amount of ammonia released from the insulating film tends to be larger. Note that it is found that, under the condition where the flow rate of the ammonia gas is high (e.g., 500 sccm or higher), the released amount of ammonia in a region with a high substrate temperature tends to be large. By contrast, the amount of ammonia released from the insulating films of the comparative samples A1 to A10 is small.

The above results demonstrate that, with the use of the ammonia gas at the time of forming the insulating films, the samples B1 to B9 and C1 to C8 of one embodiment of the present invention can each include the insulating film from which ammonia is released by heat treatment.

Example 2

In this example, the spin densities of insulating films were evaluated.

In the evaluation, samples (D1 to D10, E1 to E9, and F1 to F8) in each of which a 100-nm-thick metal oxide film, a 10-nm-thick first insulating film, and a 400-nm-thick second insulating film were formed in this order over a quartz substrate were used. Silicon oxynitride formed by a plasma CVD method was used for the first insulating film and the second insulating film. The formation conditions of the first insulating film differed between the samples.

<Sample Fabrication>

First, a metal oxide film was formed over a substrate.

The metal oxide film was formed using a metal oxide target having an atomic ratio of metal elements of In:Ga:Zn=4:2:4.1 [atomic ratio] and a mixed gas of an argon gas and an oxygen gas as a deposition gas.

Then, the first insulating film was formed over the metal oxide film. Here, the formation conditions of the first insulating film differed between the samples. Table 3 and Table 4 show the formation conditions of the first insulating films of the samples (Sample). In Table 3 and Table 4, the flow rate of a silane gas is denoted as SiH₄, the flow rate of a dinitrogen monoxide gas is denoted as N₂O, the flow rate of an ammonia gas is denoted as NH₃, the RF power is denoted as Power, and the pressure in a chamber is denoted as Pressure. Here, in the formation of the insulating films in the samples E1 to E9 and F1 to F8 of one embodiment of the present invention, silane, dinitrogen monoxide, and ammonia were used. The RF power and the pressure differed between the samples E1 to E9. The flow rate of the ammonia gas and the RF power differed between the samples F1 to F8. Meanwhile, in the formation of the insulating films in the comparative samples D1 to D10, silane and dinitrogen monoxide were used. The RF power and the pressure differed between the samples D1 to D10. In each of the samples, the substrate temperature at the time of forming the first insulating film was set to 200° C.

TABLE 3 Sample SiH₄ N₂O NH₃ Power Pressure D1 50 sccm 2000 sccm — 100 W 100 Pa D2 150 Pa D3 200 Pa D4 200 W 100 Pa D5 150 Pa D6 200 Pa D7 300 W 100 Pa D8 150 Pa D9 200 Pa D10 100 W  20 Pa E1 100 sccm 100 W 100 Pa E2 150 Pa E3 200 Pa E4 200 W 100 Pa E5 150 Pa E6 200 Pa E7 300 W 100 Pa E8 150 Pa E9 200 Pa

TABLE 4 Sample SiH₄ N₂O NH₃ Power Pressure F1 50 sccm 2000 sccm 100 sccm 200 W 100 Pa F2 200 sccm F3 500 sccm F4 1000 sccm  F5 100 sccm 300 W F6 200 sccm F7 500 sccm F8 1000 sccm 

Note that the formation conditions of the first insulating films used in the samples D1 to D10 were respectively the same as the formation conditions of the insulating films used in the samples A1 to A10 described in Example 1. The formation conditions of the first insulating films used in the samples E1 to E9 were respectively the same as the formation conditions of the insulating films used in the samples B1 to B9 described in Example 1. The formation conditions of the first insulating films used in the samples F1 to F8 were respectively the same as the formation conditions of the insulating films used in the samples C1 to C8 described in Example 1.

Next, after the above-described formation of the first insulating film, the second insulating film was formed over the first insulating film successively without exposure to the air.

The second insulating film was formed by a PECVD method using a mixed gas of a silane gas at a flow rate of 160 sccm and a nitrogen gas at a flow rate of 4000 sccm. At the time of forming the second insulating film, the pressure was 200 Pa, the power was 1500 W, and the substrate temperature was 200° C.

Next, heat treatment was performed at 370° C. in an atmosphere of a mixed gas of an oxygen gas and a nitrogen gas for one hour.

<ESR Analysis>

The samples D1 to D10, E1 to E9, and F1 to F8 were subjected to electron spin resonance (ESR) analysis. In the ESR analysis, the measurement temperature was 85 K; 10 mW of high-frequency power (microwave power) with 9.2 GHz was applied; and the direction of a magnetic field was parallel to the surface of the sample film. The lower detection limit was 3.5×10¹⁷ spins/cm³.

FIG. 39A shows the spin densities of the samples D1 to D10 and E1 to E9. FIG. 39B shows the spin densities of the samples F1 to F8. In each of FIG. 39A and FIG. 39B, the horizontal axis represents the formation conditions of the first insulating films, and the vertical axis represents the spin densities (Spin density) due to nitrogen dioxide (NO₂). According to the nitrogen nuclear spin, the signal due to nitrogen dioxide (NO₂) is divided into three signals, which are observed at g-factors of around 2.04, around 2.00, and around 1.96. The spin density refers to the number of spins per volume of the first insulating film, which is calculated by dividing the number of spins obtained through the ESR analysis by the volume of the first insulating film used for the ESR analysis. Note that in FIG. 39A, the samples D1 to D10 in which ammonia was not used in forming the insulating films are denoted as without NH₃, and E1 to E9 in which ammonia was used in forming the insulating films are denoted as with NH₃. In addition, in FIG. 39A and FIG. 39B, the samples in which the amount of ammonia was less than or equal to the lower detection limit in the ESR analysis are denoted as DL.

FIG. 39A and FIG. 39B reveal that the samples E1 to E9 and F1 to F8 of one embodiment of the present invention have lower spin densities due to nitrogen dioxide (NO₂) than the comparative samples D1 to D10.

The above results demonstrate that the spin densities due to nitrogen dioxide (NO₂) are reduced by the use of an ammonia gas in the formation of the insulating films in the samples E1 to E9 and F1 to F8 of one embodiment of the present invention.

FIG. 40 shows the correlation between the spin density due to nitrogen dioxide (NO₂) in this example and the released amount of NH₃ in Example 1. In FIG. 40, the horizontal axis represents the released amount of ammonia molecules (NH₃ desorption), and the vertical axis represents the spin density (Spin density) due to nitrogen dioxide (NO₂).

FIG. 40 reveals that as the released amount of ammonia molecules becomes larger, the spin density due to nitrogen dioxide (NO₂) tends to be lower. That is, it is found that, with the use of an ammonia gas in the formation of the insulating films, the amount of ammonia molecules released from the insulating films increases and the amount of nitrogen oxide contained in the insulating films can be reduced.

Example 3

In this example, transistors were fabricated by using the fabrication method of one embodiment of the present invention, and their electrical characteristics were measured.

<Sample Fabrication>

For the structures of the fabricated transistors, the description of the transistor 100 described in Embodiment 1 and illustrated in FIG. 3 can be referred to.

First, an approximately 100-nm-thick tungsten film was formed over a glass substrate by a sputtering method and processed to obtain a gate electrode.

Next, as a gate insulating layer, a stacked-layer film including an approximately 400-nm-thick silicon nitride film and an approximately 5-nm-thick silicon oxynitride film was formed by a plasma CVD method.

Next, an approximately 20-nm-thick metal oxide film was formed over the gate insulating layer and processed to obtain a semiconductor layer. As the metal oxide film, an approximately 10-nm-thick first metal oxide film and an approximately 10-nm-thick second metal oxide were formed in this order. The first metal oxide film and the second metal oxide film were each formed by a sputtering method using an In—Ga—Zn oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]). Note that the composition of the metal oxide film formed using a target having a composition of In:Ga:Zn=4:2:4.1 [atomic ratio] is around In:Ga:Zn=4:2:3 [atomic ratio]. The first metal oxide film was formed under the conditions where the pressure was 0.6 Pa, the power supply was 2.5 kW, and the substrate temperature was 130° C. A mixed gas of an oxygen gas and an argon gas was used as a deposition gas, and the oxygen flow rate ratio was 10%. The second metal oxide film was formed under the conditions where the pressure was 0.6 Pa, the power supply was 2.5 kW, and the substrate temperature was 130° C. An oxygen gas (oxygen flow rate ratio: 100%) was used as a deposition gas.

Next, heat treatment was performed at a temperature of 350° C. in a nitrogen atmosphere for one hour and subsequently, heat treatment was performed at 350° C. in a mixed atmosphere of oxygen and nitrogen for one hour.

Next, an approximately 5-nm-thick tungsten film, an approximately 200-nm-thick copper film, and an approximately 8-nm-thick tungsten film were formed by a sputtering method, and each of the films was processed by a dry etching method and a wet etching method, whereby a source electrode and a drain electrode were obtained.

Then, cleaning treatment was performed. In the cleaning treatment, an aqueous solution containing phosphoric acid and ethylenediaminetetraacetic acid (EDTA) was used as a cleaning solution. The phosphoric acid concentration in the cleaning solution was 0.85 weight %. Specifically, first, 85 weight % phosphoric acid was diluted 100 times to form a 0.85 weight % phosphoric acid aqueous solution. Next, 15 g of EDTA was added to the 150 L phosphoric acid aqueous solution, and the resulting solution was stirred to form a mixed solution. Then, the mixed solution was filtered to remove remaining EDTA, whereby the cleaning solution was obtained. The EDTA concentration in the cleaning solution is estimated to be several tens of ppm. In the cleaning treatment, the temperature of the cleaning solution was room temperature and the treatment time was 15 sec.

Next, plasma treatment was performed. The plasma treatment was performed under the conditions where a mixed gas of a dinitrogen monoxide gas at a flow rate of 10000 sccm and an ammonia gas at a flow rate of 500 sccm was used, the pressure was 200 Pa, the power was 150 W, the substrate temperature was 200° C., and the treatment time was 30 sec.

Next, an approximately 10-nm-thick first silicon oxynitride film and an approximately 400-nm-thick second silicon oxynitride film were formed to be stacked in this order successively after the plasma treatment without exposure to the air. Here, four kinds of samples (G1 to G4), which differed in the formation conditions of the first silicon oxynitride film, were fabricated. Note that the plasma treatment, the formation of the first silicon oxynitride film, and the formation of the second silicon oxynitride film were performed in the same treatment chamber of a PECVD apparatus.

Table 5 shows the formation conditions of the first silicon oxynitride films of the samples (Sample). In Table 5, the flow rate of a silane gas is denoted as SiH₄, the flow rate of a dinitrogen monoxide gas is denoted as N₂O, the flow rate of an ammonia gas is denoted as NH₃, the RF power is denoted as Power, and the pressure in a chamber is denoted as Pressure. Here, in the formation of the insulating films in the samples G2 to G4 of one embodiment of the present invention, silane, dinitrogen monoxide, and ammonia were used. The flow rate of the ammonia gas and the RF power differed between the samples. Meanwhile, in the formation of the insulating film in the comparative sample G1, silane and dinitrogen monoxide were used. In each of the samples, the substrate temperature at the time of forming the first silicon oxynitride film was set to 200° C.

TABLE 5 Sample SiH₄ N₂O NH₃ Power Pressure G1 50 sccm 2000 sccm — 300 W 100 Pa G2 100 sccm G3 200 sccm G4 500 sccm

Next, heat treatment was performed at 350° C. in a mixed gas atmosphere of nitrogen and oxygen for one hour.

Then, a metal oxide film was formed over the second silicon oxynitride film by a sputtering method in an oxygen-containing atmosphere to supply oxygen to the first silicon oxynitride film and the second silicon oxynitride film. After that, the metal oxide film was removed.

Next, an approximately 100-nm-thick silicon nitride film was formed by a plasma CVD method.

Through the above steps, transistors each formed over a glass substrate were obtained.

<ID-VG Characteristics of Transistors>

Next, the ID-VG characteristics of the fabricated transistors were measured.

The conditions for measuring the ID-VG characteristics of the transistors were as follows: a voltage applied to the gate electrode (hereinafter, also referred to as a gate voltage (VG)) was applied from ˜15 V to +20 V in steps of 0.25 V. Moreover, a voltage applied to the source electrode (hereinafter, also referred to as a source voltage (VS)) was 0 V (comm), and a voltage applied to the drain electrode (hereinafter, also referred to as a drain voltage (VD)) was 0.1 V and 15 V.

FIG. 41 shows the ID-VG characteristics of the sample G1. FIG. 42 shows the ID-VG characteristics of the sample G2. FIG. 43 shows the ID-VG characteristics of the sample G3. FIG. 44 shows the ID-VG characteristics of the sample G4. FIG. 41 to FIG. 44 show the formation conditions of the first silicon oxynitride films. FIG. 41 to FIG. 44 each show conditions with different transistor channel lengths in the vertical direction, and show three types of transistors having a channel width of 50 μm and a channel length of 3 μm, 4 μm, and 6 μm. In each of FIG. 41 to FIG. 44, the horizontal axis represents gate voltage (VG), the left vertical axis represents drain current (ID), and the right vertical axis represents saturation mobility (μFE) at Vd=15 V. Note that the ID-VG characteristics of 20 transistors were measured for each sample. FIG. 41 to FIG. 44 each show superimposed ID-VG characteristics of the 20 transistors. FIG. 41 to FIG. 44 show the released amount of ammonia molecules (NH₃ desorption) and the spin densities (Spin density) of insulating films formed under the same conditions as the first silicon oxynitride films (see FIG. 38A, FIG. 38B, FIG. 39A, and FIG. 39B).

<Reliability of Transistor>

Next, the reliability of the samples G1 to G3 was evaluated.

A gate bias stress test (a GBT test) was performed for the reliability evaluation. In this example, a PBTS (Positive Bias Temperature Stress) test was performed. In the PBTS test, a substrate over which the transistor was formed was held at 70° C., a voltage of 0 V was applied to a source and a drain of the transistor, and a voltage of 30 V or −30 V was applied to a gate; this state was held for one hour. The test environment was a dark state. In the PBTS test, a transistor with a channel length of 3 μm and a channel width of 50 μm was used.

FIG. 45 shows the amount of change in the threshold voltage between before and after the PBTS test. In FIG. 45, the horizontal axis represents the formation conditions of the first silicon oxynitride films, and the vertical axis represents the amount of change in threshold voltage (ΔVth). Note that in FIG. 45, the sample G4 not subjected to the PBTS test is denoted as “no data”.

It is found that the amount of change in the threshold voltage between before and after the PBTS test becomes smaller as the addition amount of the ammonia gas becomes larger. Note that when the addition amount of the ammonia gas is excessive, the ID-VG curve tends to shift in the negative direction of VG.

The above results demonstrate that the transistors of one embodiment of the present invention have favorable electrical characteristics and high reliability.

Example 4

In this example, the spin densities of insulating films subjected to plasma treatment were evaluated.

In the evaluation, samples (H1 to H6) in each of which a 100-nm-thick metal oxide film and a 10-nm-thick insulating film were stacked in this order over a quartz substrate and on which plasma treatment was performed were used. Silicon oxynitride formed by a plasma CVD method was used for the insulating films. The conditions of the plasma treatment differed between the samples.

<Sample Fabrication>

First, an approximately 100-nm-thick metal oxide film was formed over a quartz substrate.

The metal oxide film was formed by a sputtering method using an In—Ga—Zn oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]). Note that the composition of the metal oxide film formed using a target having a composition of In:Ga:Zn=4:2:4.1 [atomic ratio] is around In:Ga:Zn=4:2:3 [atomic ratio]. The metal oxide film was formed under the conditions where the pressure was 0.6 Pa, the power supply was 2.5 kW, and the substrate temperature was 130° C. A mixed gas of an oxygen gas and an argon gas was used as a deposition gas, and the oxygen flow rate ratio was 10%.

Next, heat treatment was performed at a temperature of 350° C. in a nitrogen atmosphere for one hour and subsequently, heat treatment was performed at 350° C. in a mixed atmosphere of oxygen and nitrogen for one hour.

Next, the first plasma treatment was performed. The first plasma treatment was performed under the conditions where a mixed gas of a dinitrogen monoxide gas at a flow rate of 10000 sccm and an ammonia gas at a flow rate of 500 sccm was used, the pressure was 200 Pa, the power was 150 W, the substrate temperature was 200° C., and the treatment time was 15 sec.

Then, an approximately 10-nm-thick insulating film was formed over the metal oxide film. A silicon oxynitride film was used as the insulating film, and the insulating film was formed successively after the first plasma treatment without exposure to the air.

The insulating film was formed by a PECVD method using a mixed gas of a silane gas at a flow rate of 50 sccm, a dinitrogen monoxide gas at a flow rate of 4000 sccm, and an ammonia gas at a flow rate of 200 sccm. In the formation, the pressure was 100 Pa, the power was 300 W, and the substrate temperature was 200° C.

Next, the second plasma treatment was performed. Here, the conditions of the second plasma treatment differed between the samples. Table 6 shows the conditions of the second plasma treatment (2nd plasma treatment) on the samples (Sample). In Table 6, the flow rate of a dinitrogen monoxide gas during the plasma treatment is denoted as N₂O, the flow rate of an ammonia gas is denoted as NH₃, the RF power is denoted as Power, and the pressure in a chamber is denoted as Pressure. The flow rate of the dinitrogen monoxide gas, the flow rate of the ammonia gas, the RF power, and the pressure differed between the samples H2 to H6. In each of the samples H2 to H6, the substrate temperature during the second plasma treatment was 200° C. and the treatment time was 60 sec. Meanwhile, the second plasma treatment was not performed on the comparative sample H1 (denoted as without in Table 6).

TABLE 6 2nd plasma treatment Sample N₂O NH₃ Power Pressure H1 without H2 10000 sccm — 1000 W 100 Pa H3 10000 sccm 100 sccm 1000 W 100 Pa H4 10000 sccm 100 sccm 2000 W 100 Pa H5 10000 sccm 100 sccm 1000 W 300 Pa H6 18000 sccm 100 sccm 1000 W 300 Pa

<ESR Analysis>

The samples H1 to H6 were subjected to electron spin resonance (ESR) analysis. In the ESR analysis, the measurement temperature was 85 K; 10 mW of high-frequency power (microwave power) with 9.2 GHz was applied; and the direction of a magnetic field was parallel to the surface of the sample film. The lower detection limit was 3.67×10¹⁶ spins/cm³.

FIG. 46 shows the spin densities of the samples H1 to H6. In FIG. 46, the horizontal axis represents the conditions of the second plasma treatment, and the vertical axis represents the spin densities (Spin density) due to nitrogen dioxide (NO₂). According to the nitrogen nuclear spin, the signal due to nitrogen dioxide (NO₂) is divided into three signals, which are observed at g-factors of around 2.04, around 2.00, and around 1.96. The spin density refers to the number of spins per volume of the insulating film, which is calculated by dividing the number of spins obtained through the ESR analysis by the volume of the insulating film used for the ESR analysis. In FIG. 46, the samples subjected to the second plasma treatment (2nd plasma treatment) are denoted as with, and the sample not subjected to the second plasma treatment is denoted as without.

FIG. 46 reveals that the samples H₂ to H6 subjected to the second plasma treatment have higher spin densities due to nitrogen dioxide (NO₂) than the comparative sample H1. In addition, it is found that the samples H3 to H6 subjected to the second plasma treatment using the ammonia gas have lower spin densities due to nitrogen dioxide (NO₂) than the sample H₂ subjected to the second plasma treatment not using the ammonia gas. In particular, the samples H5 and H6 with a pressure of 300 Pa tend to have lower spin densities due to nitrogen dioxide (NO₂) than the samples H3 and H4 with a pressure of 100 Pa. It is found that the addition of ammonia in the second plasma treatment leads to a reduction in the amount of nitrogen oxide in the insulating film.

Example 5

In this example, resistance of the metal oxide film was evaluated.

In the evaluation, samples (J1 to J6) in each of which a 20-nm-thick metal oxide film and a 10-nm-thick insulating film were stacked in this order over a glass substrate were used. Silicon oxynitride formed by a plasma CVD method was used for the insulating film. The presence of the insulating film and the conditions of the plasma treatment differed between the samples. As a comparative sample, a sample (J0) in which a 20-nm-thick metal oxide film was formed over a glass substrate was also fabricated.

<Sample Fabrication>

First, an approximately 20-nm-thick metal oxide film was formed over a glass substrate.

As the metal oxide film, an approximately 10-nm-thick first metal oxide film and an approximately 10-nm-thick second metal oxide were formed in this order. The description in Example 3 can be referred to for the formation of the first metal oxide film and the second metal oxide film; thus, the detailed description thereof is omitted.

Next, heat treatment was performed at a temperature of 350° C. in a nitrogen atmosphere for one hour and subsequently, heat treatment was performed at 350° C. in a mixed atmosphere of oxygen and nitrogen for one hour.

Next, the samples J1 to J6 were subjected to the first plasma treatment. The first plasma treatment was performed under the conditions where a mixed gas of a dinitrogen monoxide gas at a flow rate of 10000 sccm and an ammonia gas at a flow rate of 500 sccm was used, the pressure was 200 Pa, the power was 150 W, the substrate temperature was 200° C., and the treatment time was 15 sec. By contrast, the sample J0 was not subjected to the first plasma treatment.

Then, in each of the samples J1 to J6, an approximately 10-nm-thick insulating film was formed over the metal oxide film. A silicon oxynitride film was used as the insulating film, and the insulating film was formed successively after the first plasma treatment without exposure to the air. By contrast, in the sample J0, the insulating film was not formed.

The insulating film was formed by a PECVD method using a mixed gas of a silane gas at a flow rate of 50 sccm, a dinitrogen monoxide gas at a flow rate of 4000 sccm, and an ammonia gas at a flow rate of 200 sccm. In the formation, the pressure was 100 Pa, the power was 300 W, and the substrate temperature was 200° C.

Next, the samples J2 to J6 were subjected to the second plasma treatment. Table 7 shows the presence or absence of the insulating film (Insulating film) in each of the samples (Sample) and the conditions of the second plasma treatment (2nd plasma treatment). In Table 7, the flow rate of a dinitrogen monoxide gas during the plasma treatment is denoted as N₂O, the flow rate of an ammonia gas is denoted as NH₃, the RF power is denoted as Power, and the pressure in a chamber is denoted as Pressure. The flow rate of the dinitrogen monoxide gas, the flow rate of the ammonia gas, the RF power, and the pressure differed between the samples J2 to J6. In each of the samples J2 to J6, the substrate temperature during the second plasma treatment was 200° C. and the treatment time was 60 sec. Note that the second plasma treatment was performed successively after the formation of the insulating film without exposure to the air. The second plasma treatment was not performed on the samples J0 and J1 (denoted as without in Table 7).

TABLE 7 Insulating 2nd plasma treatment Sample film N₂O NH₃ Power Pressure J0 without without J1 with without J2 10000 sccm — 1000 W 100 Pa J3 10000 sccm 100 sccm 1000 W 100 Pa J4 10000 sccm 100 sccm 2000 W 100 Pa J5 10000 sccm 100 sccm 1000 W 300 Pa J6 18000 sccm 100 sccm 1000 W 300 Pa

Then, an opening reaching the metal oxide film was formed in the insulating film, and a terminal was provided.

<Sheet Resistance Evaluation>

The sheet resistance of each of the metal oxide films in the above-described samples J0 to J6 was measured.

FIG. 47 shows the values of the sheet resistance of the samples J0 to J6. In FIG. 47, the horizontal axis represents the samples (Sample), and the vertical axis represents the sheet resistance (Sheet resistance) of the metal oxide films. In FIG. 47, the samples in each of which the insulating film (Insulating film) was formed are denoted as with, and the sample in which the insulating film was not formed is denoted as without. In FIG. 47, the samples subjected to the second plasma treatment (2nd plasma treatment) are denoted as with, and the samples not subjected to the second plasma treatment are denoted as without.

FIG. 47 reveals that the sample J1 in which the insulating film was formed has lower resistance of the metal oxide film than the sample J0 in which the insulating film was not formed. In addition, it is found that the samples J3 to J6 subjected to the second plasma treatment have higher resistance of the metal oxide film than the sample J1 not subjected to the second plasma treatment. Performing the second plasma treatment of one embodiment of the present invention probably supplies oxygen to the metal oxide film to reduce V_(o) and V_(o)H, i.e., carrier concentration, in the metal oxide film.

Example 6

In this example, transistors were fabricated by using the fabrication method of one embodiment of the present invention, and their electrical characteristics were measured.

<Sample Fabrication>

For the structures of the fabricated transistors, the description of the transistor 100 described in Embodiment 1 and illustrated in FIG. 3 can be referred to.

First, an approximately 100-nm-thick tungsten film was formed over a glass substrate by a sputtering method and processed to obtain a gate electrode.

Next, as a gate insulating layer, a stacked-layer film including an approximately 400-nm-thick silicon nitride film and an approximately 5-nm-thick silicon oxynitride film was formed by a plasma CVD method.

Next, an approximately 20-nm-thick metal oxide film was formed over the gate insulating layer and processed to obtain a semiconductor layer. As the metal oxide film, an approximately 10-nm-thick first metal oxide film and an approximately 10-nm-thick second metal oxide were formed in this order. The description in Example 3 can be referred to for the formation of the first metal oxide film and the second metal oxide film; thus, the detailed description thereof is omitted.

Next, heat treatment was performed at a temperature of 350° C. in a nitrogen atmosphere for one hour and subsequently, heat treatment was performed at 350° C. in a mixed atmosphere of oxygen and nitrogen for one hour.

Next, an approximately 5-nm-thick tungsten film, an approximately 200-nm-thick copper film, and an approximately 8-nm-thick tungsten film were formed by a sputtering method, and each of the films was processed by a dry etching method and a wet etching method, whereby a source electrode and a drain electrode were obtained.

Then, the first cleaning treatment was performed. In the first cleaning treatment, an aqueous solution containing phosphoric acid and ethylenediaminetetraacetic acid (EDTA) was used as a cleaning solution. The phosphoric acid concentration in the cleaning solution was 0.85 weight %. The above description in Example 3 can be referred to for the cleaning solution; thus, the detailed description thereof is omitted. In the first cleaning treatment, the temperature of the cleaning solution was room temperature and the treatment time was 15 sec.

Next, the second cleaning treatment was performed. The first plasma treatment was performed as the second cleaning treatment. The first plasma treatment was performed on the samples under the conditions where a mixed gas of a dinitrogen monoxide gas at a flow rate of 10000 sccm and an ammonia gas at a flow rate of 500 sccm was used, the pressure was 200 Pa, the power was 150 W, the substrate temperature was 200° C., and the treatment time was 15 sec.

Then, an approximately 10-nm-thick first silicon oxynitride film was formed successively after the first plasma treatment without exposure to the air. The first silicon oxynitride film in each of the samples was formed by a PECVD method using a mixed gas of a silane gas at a flow rate of 50 sccm, a dinitrogen monoxide gas at a flow rate of 4000 sccm, and an ammonia gas at a flow rate of 200 sccm. In the formation, the pressure was 100 Pa, the power was 300 W, and the substrate temperature was 200° C.

Next, the second plasma treatment was performed successively after the formation of the first silicon oxynitride film without exposure to the air. Table 8 shows the conditions of the second plasma treatment (2nd plasma treatment) on the samples (Sample). In Table 8, the flow rate of a dinitrogen monoxide gas is denoted as N₂O, the flow rate of an ammonia gas is denoted as NH₃, the RF power is denoted as Power, and the pressure in a chamber is denoted as Pressure. The flow rate of the ammonia gas differed between samples K2 and K3. In each of the samples K2 and K3, the substrate temperature during the second plasma treatment was 200° C. and the treatment time was 60 sec. The second plasma treatment was not performed on a sample K1 (denoted as without in Table 8).

TABLE 8 2nd plasma treatment Sample N₂O NH₃ Power Pressure K1 without K2 10000 sccm — 1000 W 100 Pa K3 10000 sccm 100 sccm 1000 W 100 Pa

Then, an approximately 400-nm-thick second silicon oxynitride film was formed successively after the second plasma treatment without exposure to the air. The second silicon oxynitride film in each of the samples was formed by a PECVD method using a mixed gas of a silane gas at a flow rate of 200 sccm and a dinitrogen monoxide gas at a flow rate of 18000 sccm. In the formation, the pressure was 300 Pa, the power was 2000 W, and the substrate temperature was 200° C.

Next, the third plasma treatment was performed successively after the formation of the second silicon oxynitride film without exposure to the air. The third plasma treatment was performed on the samples under the conditions where a nitrogen gas at a flow rate of 3000 sccm was used, the pressure was 100 Pa, the power was 1500 W, the substrate temperature was 200° C., and the treatment time was 60 sec.

Note that the first plasma treatment, the formation of the first silicon oxynitride film, the second plasma treatment, the formation of the second silicon oxynitride film, and the third plasma treatment were performed in the same treatment chamber of a PECVD apparatus.

Next, heat treatment was performed at 350° C. in a mixed gas atmosphere of nitrogen and oxygen for one hour.

Next, an approximately 100-nm-thick silicon nitride film was formed by a plasma CVD method.

Through the above steps, transistors each formed over a glass substrate were obtained.

<ID-VG Characteristics of Transistors>

Next, the ID-VG characteristics of the fabricated transistors were measured.

The conditions for measuring the ID-VG characteristics of the transistors were as follows: a voltage applied to the gate electrode (VG) was applied from ˜15 V to +20 V in steps of 0.25 V. Moreover, a voltage applied to the source electrode (VS) was 0 V (comm), and a voltage applied to the drain electrode (VD) was 0.1 V and 15 V.

FIG. 48 shows the ID-VG characteristics of the sample K1. FIG. 49 shows the ID-VG characteristics of the sample K2. FIG. 50 shows the ID-VG characteristics of the sample K3. FIG. 48 to FIG. 50 show the conditions of the second plasma treatment. FIG. 48 to FIG. 50 each show conditions with different transistor channel lengths and channel widths in the vertical direction, and show three types of transistors having a channel length of 3 μm and a channel width of 5 μm, a channel length of 3 μm and a channel width of 50 μm, and a channel length of 6 μm and a channel width of 50 μm. In each of FIG. 48 to FIG. 50, the horizontal axis represents gate voltage (VG), the left vertical axis represents drain current (ID), and the right vertical axis represents saturation mobility (μFE) at Vd=15 V. Note that the ID-VG characteristics of 20 transistors were measured for each sample. FIG. 48 to FIG. 50 each show superimposed ID-VG characteristics of the 20 transistors.

<Reliability of Transistor>

Next, the reliability of the fabricated transistors was evaluated.

A gate bias stress test (a GBT test) was performed for the reliability evaluation. In this example, a PBTS test and an NBTIS (Negative Bias Temperature Illumination Stress) test were performed.

In the PBTS test, a substrate over which the transistor was formed was held at 70° C., a voltage of 0 V was applied to a source and a drain of the transistor, and a voltage of 30 V or −30 V was applied to a gate; this state was held for one hour. The test environment was a dark state. In the NBTIS test, a voltage of 0 V was applied to the source and the drain of the transistor and a voltage of 30 V or −30 V was applied to the gate in a state where the substrate over which the transistor was formed was held at 70° C. and irradiation with white LED light at 33000 lx was performed; this state was held for one hour. The irradiation with white LED light was performed from the glass substrate side. In the PBTS test and the NBTIS test, a transistor with a channel length of 3 μm and a channel width of 5 μm was used.

FIG. 51 shows the amounts of change in the threshold voltage between before and after the PBTS test and between before and after the NBTIS test. In FIG. 51, the horizontal axis represents the conditions of the second plasma treatment, and the vertical axis represents the amount of change in threshold voltage (ΔVth).

FIG. 48 to FIG. 50 reveal that the samples K2 and K3 subjected to the second plasma treatment have a smaller variation in the electrical characteristics and more favorable transistor characteristics than the comparative sample K1. FIG. 51 shows that the amount of change in the threshold voltage due to the PBTS test is larger in the sample K2 subjected to the second plasma treatment using the dinitrogen monoxide gas than in the sample K1. Meanwhile, it is found that, in the sample K3 subjected to the second plasma treatment using the mixed gas of the dinitrogen monoxide gas and the ammonia gas, the amount of change in the threshold voltage due to the PBTS test is small. The addition of ammonia in the second plasma treatment probably reduces the amount of nitrogen oxide in the insulating film, which inhibits a change in the threshold voltage of the transistor.

The above results demonstrate that the transistors of one embodiment of the present invention have favorable electrical characteristics and high reliability.

Example 7

In this example, transistors were fabricated by using the fabrication method of one embodiment of the present invention, and their electrical characteristics were measured.

<Sample Fabrication>

For the structures of the fabricated transistors, the description of the transistor 100 described in Embodiment 1 and illustrated in FIG. 3 can be referred to. In this example, three kinds of samples (L1 to L3) were fabricated under different conditions of the second plasma treatment and the fourth plasma treatment.

First, an approximately 100-nm-thick tungsten film was formed over a glass substrate by a sputtering method and processed to obtain a gate electrode.

Next, as a gate insulating layer, a stacked-layer film including an approximately 400-nm-thick silicon nitride film and an approximately 5-nm-thick silicon oxynitride film was formed by a plasma CVD method.

Next, an approximately 20-nm-thick metal oxide film was formed over the gate insulating layer and processed to obtain a semiconductor layer. As the metal oxide film, an approximately 10-nm-thick first metal oxide film and an approximately 10-nm-thick second metal oxide were formed in this order. The description in Example 3 can be referred to for the formation of the first metal oxide film and the second metal oxide film; thus, the detailed description thereof is omitted.

Next, heat treatment was performed at a temperature of 350° C. in a nitrogen atmosphere for one hour and subsequently, heat treatment was performed at 350° C. in a mixed atmosphere of oxygen and nitrogen for one hour.

Next, an approximately 5-nm-thick tungsten film, an approximately 200-nm-thick copper film, and an approximately 8-nm-thick tungsten film were formed by a sputtering method, and each of the films was processed by a dry etching method and a wet etching method, whereby a source electrode and a drain electrode were obtained.

Then, the first cleaning treatment was performed. The above description in Example 6 can be referred to for the first cleaning treatment; thus, the detailed description thereof is omitted.

Next, the second cleaning treatment was performed. The first plasma treatment was performed as the second cleaning treatment. The first plasma treatment was performed on the samples under the conditions where a mixed gas of a dinitrogen monoxide gas at a flow rate of 10000 sccm and an ammonia gas at a flow rate of 500 sccm was used, the pressure was 200 Pa, the power was 150 W, the substrate temperature was 200° C., and the treatment time was 15 sec.

Then, an approximately 10-nm-thick first silicon oxynitride film was formed successively after the first plasma treatment without exposure to the air. The above description in Example 6 can be referred to for the formation of the first silicon oxynitride film; thus, the detailed description thereof is omitted.

Next, the second plasma treatment was performed successively after the formation of the first silicon oxynitride film without exposure to the air. The second plasma treatment was performed on the samples under the conditions where a mixed gas of a dinitrogen monoxide gas at a flow rate of 10000 sccm and an ammonia gas at a flow rate of 100 sccm was used, the pressure was 300 Pa, the power was 1000 W, and the substrate temperature was 200° C. Here, the treatment time of the second plasma treatment differed between the samples. For the samples L1 and L3, the treatment time of the second plasma treatment was 60 sec. For the sample L2, the treatment time of the second plasma treatment was 120 sec.

Then, an approximately 200-nm-thick second silicon oxynitride film was formed successively after the second plasma treatment without exposure to the air. The description can be referred to for the formation of the second silicon oxynitride film; thus, the detailed description thereof is omitted.

Next, the third plasma treatment was performed successively after the formation of the second silicon oxynitride film without exposure to the air. The third plasma treatment was performed on the samples under the conditions where a nitrogen gas at a flow rate of 3000 sccm was used, the pressure was 100 Pa, the power was 1500 W, the substrate temperature was 200° C., and the treatment time was 60 sec.

Note that the first plasma treatment, the formation of the first silicon oxynitride film, the second plasma treatment, the formation of the second silicon oxynitride film, and the third plasma treatment were performed in the same treatment chamber of a PECVD apparatus.

Next, heat treatment was performed at 350° C. in a mixed gas atmosphere of nitrogen and oxygen for one hour.

Next, the fourth plasma treatment was performed. The fourth plasma treatment was performed on the samples under the conditions where a mixed gas of a dinitrogen monoxide gas at a flow rate of 10000 sccm and an ammonia gas at a flow rate of 100 sccm was used, the pressure was 300 Pa, the power was 1000 W, and the substrate temperature was 240° C. Here, whether or not the fourth plasma treatment was performed differed between the samples. For the sample L3, the treatment time of the fourth plasma treatment was 60 sec. The samples L1 and L2 were not subjected to the fourth plasma treatment.

Next, an approximately 100-nm-thick silicon nitride film was formed successively after the fourth plasma treatment without exposure to the air. The silicon nitride film in each of the samples was formed by a PECVD method using a mixed gas of a silane gas at a flow rate of 50 sccm, a nitrogen gas at a flow rate of 5000 sccm, and an ammonia gas at a flow rate of 100 sccm. In the formation, the pressure was 200 Pa and the deposition power was 1500 W. The substrate temperature at the time of formation was 240° C.

Through the above steps, transistors each formed over a glass substrate were obtained.

<ID-VG Characteristics of Transistors>

Next, the ID-VG characteristics of the fabricated transistors were measured.

The conditions for measuring the ID-VG characteristics of the transistors were as follows: a voltage applied to the gate electrode (VG) was applied from ˜15 V to +20 V in steps of 0.25 V. Moreover, a voltage applied to the source electrode (VS) was 0 V (comm), and a voltage applied to the drain electrode (VD) was 0.1 V and 15 V.

FIG. 52 shows the ID-VG characteristics of the samples L1 to L3. FIG. 52 also shows the samples (Sample), the treatment time of the second plasma treatment (denoted as 2nd), and the treatment time of the fourth plasma treatment (denoted as 4th). The shown characteristics are of transistors with a channel length of 3 μm and a channel width of 5 μm. In FIG. 52, the horizontal axis represents gate voltage (VG), and the vertical axis represents drain current (ID). Note that the ID-VG characteristics of 20 transistors were measured for each sample. FIG. 52 shows superimposed ID-VG characteristics of the 20 transistors.

FIG. 52 reveals that the sample L2 subjected to the second plasma treatment for a longer treatment time has electrical characteristics with a smaller variation than the sample L1. The second plasma treatment performed for a longer time probably increases the amount of oxygen supplied to the semiconductor layer and reduces V_(o) and V_(o)H. In addition, it is found that the sample L3 subjected to the fourth plasma treatment has electrical characteristics with a smaller variation than the sample L2. Since the substrate temperature during the second plasma treatment was 200° C. and the substrate temperature during the fourth plasma treatment was 240° C., reductions in V_(o) and V_(o)H were probably promoted more by the fourth plasma treatment.

The above results demonstrate that the transistors of one embodiment of the present invention have favorable electrical characteristics.

REFERENCE NUMERALS

C1: capacitor, C2: capacitor, DL_Y: data line, DL_1: data line, G1: wiring, G2: wiring, GL_X: gate line, GL_1: gate line, M1: transistor, M2: transistor, M3: transistor, N1: node, N2: node, P1: region, P2: region, S1: wiring, S2: wiring, T1: period, T2: period, 10: transistor, 10A: transistor, 10B: transistor, 10C: transistor, 100: transistor, 100A: transistor, 100B: transistor, 100C: transistor, 100D: transistor, 100E: transistor, 100F: transistor, 100G: transistor, 100H: transistor, 102: substrate, 104: conductive layer, 106: insulating layer, 106 a: insulating layer, 106 a 1: insulating layer, 106 a 2: insulating layer, 106 a 3: insulating layer, 106 b: insulating layer, 108: semiconductor layer, 108 a: semiconductor layer, 108 af: metal oxide film, 108 b: semiconductor layer, 108 bf: metal oxide film, 112 a: conductive layer, 112 b: conductive layer, 113 a: conductive layer, 113 af: conductive film, 113 b: conductive layer, 113 bf: conductive film, 113 c: conductive layer, 113 cf: conductive film, 114: insulating layer, 116: insulating layer, 118: insulating layer, 120: conductive layer, 120 a: conductive layer, 120 b: conductive layer, 130: plasma, 132: plasma, 134: plasma, 136: plasma, 140: resist mask, 142 a: opening, 142 b: opening, 142 c: opening, 150: metal oxide layer, 400: pixel circuit, 400EL: pixel circuit, 400LC: pixel circuit, 401: circuit, 401EL: circuit, 401LC: circuit, 501: pixel circuit, 502: pixel portion, 504: driver circuit portion, 504 a: gate driver, 504 b: source driver, 506: protection circuit, 507: terminal portion, 550: transistor, 552: transistor, 554: transistor, 560: capacitor, 562: capacitor, 570: liquid crystal element, 572: light-emitting element, 700: display device, 700A: display device, 700B: display device, 701: substrate, 702: pixel portion, 704: source driver circuit portion, 705: substrate, 706: gate driver circuit portion, 708: FPC terminal portion, 710: signal line, 711: wiring portion, 712: sealant, 713: conductive layer, 714: conductive layer, 716: FPC, 717: IC, 721: source driver IC, 722: gate driver circuit portion, 723: FPC, 724: printed circuit board, 725: alignment film, 726: alignment film, 727: spacer, 728: wiring, 730: insulating film, 732: sealing layer, 734: insulating layer, 736: coloring layer, 738: light-blocking layer, 740: protective layer, 741: protective layer, 742: bonding layer, 743: resin layer, 744: insulating layer, 745: support substrate, 746: resin layer, 750: transistor, 752: transistor, 755: polarizing plate, 756: polarizing plate, 757: light source, 760: wiring, 770: planarization insulating film, 772: conductive layer, 773: insulating layer, 774: conductive layer, 775: liquid crystal element, 776: liquid crystal layer, 778: structure body, 780: anisotropic conductive film, 782: light-emitting element, 786: EL layer, 788: conductive film, 790: capacitor, 6000: display module, 6001: upper cover, 6002: lower cover, 6005: FPC, 6006: display device, 6009: frame, 6010: printed circuit board, 6011: battery, 6015: light-emitting portion, 6016: light-receiving portion, 6017 a: light guide portion, 6017 b: light guide portion, 6018: light, 6500: electronic device, 6501: housing, 6502: display portion, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7100: television device, 7101: housing, 7103: stand, 7111: remote controller, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: digital signage, 7401: pillar, 7500: display portion 

1. A method for fabricating a semiconductor device, comprising the steps of: forming a semiconductor layer comprising a metal oxide; forming, over the semiconductor layer, a first conductive layer and a second conductive layer that are apart from each other over the semiconductor layer; performing first plasma treatment using a mixed gas comprising a first oxidizing gas and a reducing gas on a region where the semiconductor layer is exposed; forming a first insulating layer over the semiconductor layer, the first conductive layer, and the second conductive layer; and forming a second insulating layer over the first insulating layer, wherein the first insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas comprising a first gas comprising silicon, a second oxidizing gas, and a first ammonia gas, wherein the first insulating layer is formed successively after the first plasma treatment without exposure to an air, wherein the second insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas comprising a second gas comprising silicon and a third oxidizing gas, and wherein the second insulating layer is formed successively after formation of the first insulating layer without exposure to an air.
 2. The method for fabricating a semiconductor device, according to claim 1, wherein a flow rate of the first ammonia gas is greater than or equal to 0.01 times and less than or equal to 1 time a flow rate of the second oxidizing gas in the formation of the first insulating layer.
 3. The method for fabricating a semiconductor device, according to claim 1, wherein a flow rate of the reducing gas is greater than or equal to 0.005 times and less than or equal to 1 time a flow rate of the first oxidizing gas in the first plasma treatment.
 4. The method for fabricating a semiconductor device, according to claim 1, wherein the reducing gas is ammonia.
 5. The method for fabricating a semiconductor device, according to claim 1, wherein the first oxidizing gas, the second oxidizing gas, and the third oxidizing gas are dinitrogen monoxide.
 6. The method for fabricating a semiconductor device, according to claim 1, further comprising: a step of performing second plasma treatment between the step of forming the first insulating layer and the step of forming the second insulating layer, wherein the second plasma treatment is performed using a mixed gas comprising a fourth oxidizing gas.
 7. The method for fabricating a semiconductor device, according to claim 6, wherein the second plasma treatment is performed using a mixed gas comprising a second ammonia gas in addition to the fourth oxidizing gas, and wherein a flow rate of the second ammonia gas is greater than or equal to 0.001 times and less than or equal to 1 time a flow rate of the fourth oxidizing gas.
 8. The method for fabricating a semiconductor device, according to claim 7, wherein the fourth oxidizing gas is dinitrogen monoxide.
 9. The method for fabricating a semiconductor device, according to claim 1, further comprising: a step of performing third plasma treatment after the step of forming the second insulating layer, wherein the third plasma treatment is performed using a mixed gas comprising a fifth oxidizing gas.
 10. The method for fabricating a semiconductor device, according to claim 9, wherein the third plasma treatment is performed using a mixed gas comprising a third ammonia gas in addition to the fifth oxidizing gas, and wherein a flow rate of the third ammonia gas is greater than or equal to 0.001 times and less than or equal to 1 time a flow rate of the fifth oxidizing gas.
 11. The method for fabricating a semiconductor device, according to claim 10, wherein the fifth oxidizing gas is dinitrogen monoxide.
 12. The method for fabricating a semiconductor device, according to claim 1, further comprising: a step of performing fourth plasma treatment on the second insulating layer and a step of forming a third insulating layer over the second insulating layer, wherein the fourth plasma treatment is performed using a mixed gas comprising a sixth oxidizing gas, wherein the third insulating layer is formed by a plasma-enhanced chemical vapor deposition method, and wherein the third insulating layer is formed successively after the fourth plasma treatment without exposure to an air.
 13. The method for fabricating a semiconductor device, according to claim 12, wherein the fourth plasma treatment is performed using a mixed gas comprising a fourth ammonia gas in addition to the sixth oxidizing gas, and wherein a flow rate of the fourth ammonia gas is greater than or equal to 0.001 times and less than or equal to 1 time a flow rate of the sixth oxidizing gas.
 14. The method for fabricating a semiconductor device, according to claim 13, wherein the sixth oxidizing gas is dinitrogen monoxide.
 15. The method for fabricating a semiconductor device, according to claim 1, further comprising: a step of performing cleaning treatment between the step of forming the first conductive layer and the second conductive layer and the step of performing the first plasma treatment, wherein a cleaning solution comprising phosphoric acid and an additive is used in the step of performing the cleaning treatment, and wherein the additive has a function of forming a complex by being coordinated to a metal in the first conductive layer and the second conductive layer.
 16. The method for fabricating a semiconductor device, according to claim 15, wherein a concentration of the additive in the cleaning solution is higher than or equal to 10 ppm.
 17. The method for fabricating a semiconductor device, according to claim 1, wherein the first conductive layer and the second conductive layer each have a stacked-layer structure of a first conductive film, a second conductive film over the first conductive film, and a third conductive film over the second conductive film, wherein the second conductive film comprises copper, silver, or aluminum, wherein the first conductive film and the third conductive film comprise an element different from an element of the second conductive film, and wherein the first conductive film and the third conductive film each independently comprise at least one of titanium, tungsten, molybdenum, chromium, tantalum, zinc, indium, platinum, and ruthenium.
 18. The method for fabricating a semiconductor device, according to claim 1, wherein the semiconductor layer has a stacked-layer structure of a first metal oxide film and a second metal oxide film over the first metal oxide film, and wherein a proportion of a flow rate of an oxygen gas in a whole deposition gas in forming the second metal oxide film is higher than a proportion of a flow rate of an oxygen gas in a whole deposition gas in forming the first metal oxide film. 